公开(公告)号：KR1020020021675A

公开(公告)日：2002-03-21

申请号：KR1020027001201

申请日：2000-06-01

Applicant: 한국과학기술연구원

Inventor： 고석근 ,  조정 ,  이철수

IPC: C08J7/18

CPC classification number: B01D67/009 ,  B01D67/0093 ,  B01D71/26 ,  C08J7/12 ,  H01M6/181 ,  H01M6/188 ,  H01M10/0565 ,  H01M2300/0082

Abstract: PURPOSE: In a method of modifying a surface of polymer membrane by ion assisted reaction, the surface of the polymer membrane is processed according to the dose of the ion irradiation and the kind of the ion beam, thereby varying the membrane surface to hydrophilicity. In addition, the size of the pores is controlled according to the irradiation dose of the ion beam, thereby enabling water penetration or electrolyte transmission. The surface modification does not change the characteristics of the membrane itself. Since the surface characteristics are merely changed, even if the membrane is used for a long time, the membrane characteristics do not deteriorate. Moreover, the size of the pores can be adjusted, thereby easily controlling porosity of the various kinds of polymer membranes requiring the selective penetrability. Also, the electrolyte penetrability is remarkably improved. CONSTITUTION: The surface modification method for a polymer membrane by using an ion assisted reaction to control the size and number of pores on the surface of the polymer membrane and to form hydrophilic groups on the polymer membrane, comprises irradiating an ion beam to the polymer membrane; and injecting simultaneously a reaction gas.

Abstract translation: 目的：在通过离子辅助反应改性聚合物膜表面的方法中，根据离子照射的剂量和离子束的种类来处理聚合物膜的表面，从而将膜表面改变为亲水性。 此外，根据离子束的照射剂量来控制孔的尺寸，从而使水渗透或电解质传输。 表面改性不会改变膜本身的特性。 由于表面特性只是改变，即使长时间使用膜，膜特性也不会劣化。 此外，可以调节孔的尺寸，从而容易地控制需要选择性渗透性的各种聚合物膜的孔隙率。 此外，电解质渗透性显着提高。 构成：通过使用离子辅助反应来控制聚合物膜表面上的孔的尺寸和数量并在聚合物膜上形成亲水基团的聚合物膜的表面改性方法包括将离子束照射到聚合物膜 ; 同时注入反应气体。

公开(公告)号：KR1020010027898A

公开(公告)日：2001-04-06

申请号：KR1019990039876

申请日：1999-09-16

Applicant: 한국과학기술연구원

Inventor： 고석근 ,  조정

IPC: C08J7/00

CPC classification number: C08J7/12

Abstract: PURPOSE: A method for treating surface of high molecular is provided which can maintain hydrophilic functional group under water for a long period thus keep the surface condition very stable, as well as can improve the movement of electrolyte, the rate of electrolysis, and mechanical strength in high molecular separating membrane by using ion assist reaction to treat the surface of high molecule of C, and H or C, H, and O, then increasing the formation of hydrophilic functional groups to the layer beneath the surface. CONSTITUTION: A method for treating surface of high molecular using ion assist reaction characteristically comprises the steps of: irradiating hydrogen having a certain energy to the surface of a high molecular material at the interval of 15-90 centimeter, under vacuum condition, and blowing oxygen as a reactive gas to the surface of the high molecular material, wherein the amount of hydrogen irradiation is in the range of 10¬15-10¬17 ions/cm¬2, and the energy that the hydrogen has is 0.5-1.5keV to activate the surface of the high molecular materials, and wherein the amount of the reactive gas, oxygen can be varied depending on the pump capacity, and the degree of vacuum is set to the range of 30-70 torr.

Abstract translation: 目的：提供一种高分子表面处理方法，可长时间保持水中的亲水性官能团，保持表面状态非常稳定，可改善电解液的运动，电解速率和机械强度 在高分子分离膜中，通过使用离子辅助反应来处理高分子C，H或C，H和O的表面，然后增加亲水官能团的形成到表面下面的层。 构成：使用离子辅助反应处理高分子表面的方法特征在于包括以下步骤：在真空条件下以15-90厘米的间隔向高分子材料的表面照射具有一定能量的氢，并且吹入氧气 作为与高分子材料表面的反应性气体，其中氢照射的量在10-15×10 17离子/ cm 2的范围内，氢的能量为0.5-1.5keV至 激活高分子材料的表面，并且其中反应气体的量可以根据泵的容量而变化，并且真空度设定在30-70乇的范围内。

公开(公告)号：KR1020010032692A

公开(公告)日：2001-04-25

申请号：KR1020007005975

申请日：1998-12-04

Applicant: 한국과학기술연구원

Inventor： 고석근 ,  정형진 ,  최원국 ,  조정

IPC: C23C14/46

CPC classification number: H01J37/3277 ,  C23C16/4417 ,  C23C16/486 ,  D06B19/00 ,  H01J37/317 ,  H01J2237/338

Abstract: PURPOSE: An apparatus for surface modification of polymer, metal and ceramic materials using ion beam is provided, which is capable of controlling the amount of a reaction gas and the energy of an ion beam, modifying the surface of a powder material and implementing a continuous surface modification of a material. CONSTITUTION: In case irradiating an ion beam onto the surface of a metallic thin film, oxide thin film or organic material (200) having curved surfaces, an attraction force or repulsion force between the ions from the ion gun (210) and the surfaces of the material is generated by applying a voltage from a voltage source (220) to the material to be surface-modified simultaneously while Ar+ ions from the ion gun are accelerated, so that a charge distortion may be obtained to modify the composition and shapes of the surface of the material.

Abstract translation: 目的：提供一种使用离子束对聚合物，金属和陶瓷材料进行表面改性的设备，其能够控制反应气体的量和离子束的能量，改变粉末材料的表面并实现连续的 表面改性材料。 构成：在将金属薄膜，氧化物薄膜或具有曲面的有机材料（200）的表面上照射离子束的情况下，离子枪（210）的离子与离子枪（210）的表面之间的吸引力或排斥力 通过将来自电压源（220）的电压同时施加到待表面改性的材料同时产生来自离子枪的Ar +离子的材料，从而可以获得电荷变形以改变组成和形状 表面材料。

公开(公告)号：KR100329810B1

公开(公告)日：2002-03-25

申请号：KR1020007005975

申请日：1998-12-04

Applicant: 한국과학기술연구원

Inventor： 고석근 ,  정형진 ,  최원국 ,  조정

IPC: C23C14/46

Abstract: 이온빔 (IB)을 이용한 고분자, 금속 및 세라믹 재료의 표면처리장치가 개시되어 있는데, 표면처리되는 재료에 인가되는 전압 (22)을 공급하고 제어함으로써 재료에 조사되는 이온빔 (IB) 에너지를 조절할 수 있고, 이온빔이 조사되는 진공조 영역에서의 반응성 가스 진공도를 이온빔이 발생되는 영역에서의 것과 다르게 하고, 또한 양면 조사 처리 및 연속 처리를 적용할 수 있다.

公开(公告)号：KR1019990047679A

公开(公告)日：1999-07-05

申请号：KR1019970066184

申请日：1997-12-05

Applicant: 한국과학기술연구원

Inventor： 고석근 ,  최원국 ,  정형진 ,  조정

IPC: C23C14/32

Abstract: 본 발명은 이온 빔을 이용한 재료의 표면 처리 장치에 관한 것으로, 표면 처리되는 시편에 전압을 인가하고 조절하여 시편에 조사되는 이온 빔 에너지를 조절할 수 있고, 이온 도움 반응 장치에 이용되는 반응성 가스의 진공도를 이온 빔이 조사되는 부분과 이온 빔이 발생되는 부분에서 차별화시킬 수 있고, 양면 조사 방식 내지 연속 프로세스에 적용될 수 있는 표면 처리 장치를 제공한다.

公开(公告)号：KR100451415B1

公开(公告)日：2004-10-07

申请号：KR1020027001202

申请日：2000-06-01

Applicant: 한국과학기술연구원

Inventor： 고석근 ,  조정

IPC: H01L21/28

CPC classification number: H01L21/76856 ,  H01L21/28568 ,  H01L21/76838 ,  H01L21/76859 ,  H01L21/76862 ,  H01L21/76864 ,  H01L2221/1078

Abstract: The present invention relates to a platinum electrode structure for a semiconductor, having: a semiconductor substrate; a TiN/Ti gradient layer formed at an upper portion of the substrate; and a Pt thin film formed at an upper portion of the gradient layer. In addition, the present invention relates to a method for enhancing adhesion between a semiconductor substrate and a platinum electrode, by: depositing a Ti seed layer on the semiconductor substrate; forming a TiN/Ti gradient layer by irradiating nitrogen ion beam and injecting reaction gas to the surface of the Ti seed layer; and depositing a Pt thin film on the TiN/Ti gradient layer.

Abstract translation: 本发明涉及一种用于半导体的铂电极结构，具有：半导体衬底; 在衬底的上部形成的TiN / Ti梯度层; 以及在该梯度层的上部形成的Pt薄膜。 此外，本发明涉及一种通过以下步骤来提高半导体衬底与铂电极之间的粘附力的方法：在半导体衬底上沉积Ti籽晶层; 通过照射氮离子束并向Ti种子层的表面注入反应气体，形成TiN / Ti梯度层; 并在TiN / Ti梯度层上沉积Pt薄膜。

公开(公告)号：KR1020040083175A

公开(公告)日：2004-10-01

申请号：KR1020030017740

申请日：2003-03-21

Applicant: 아텍엔지니어링 주식회사 ,  한국과학기술연구원

Inventor： 조정 ,  이호성 ,  최원국 ,  유리에르마코프

IPC: H05H1/54

CPC classification number: H01J27/00

Abstract: PURPOSE: A plasma accelerator with a closed electron drift is provided to enhance the relative efficiency by using low-priced gases such as Argon and Neon as well as high-priced gases such as Xenon and Krypton. CONSTITUTION: A discharge channel(10) is used for ionizing and accelerating inflow gases. An anode is arranged coaxially to the discharge channel. A cathode is arranged at the outside of the discharge channel and is electrically connected to the anode. The cathode is electrically connected to the anode. A magnetic field generation circuit(50) is used for generating magnetic field to the discharge channel. A gas supply unit(70) supplies the inflow gases to the discharge channel. A cooling unit(80) cools one of the gas supply unit and the discharge channel.

Abstract translation: 目的：提供具有闭合电子漂移的等离子体加速器，以通过使用低价气体如氩气和氖气以及高价格气体如氙气和氪气来提高相对效率。 构成：排放通道（10）用于电离和加速流入气体。 阳极与排出通道同轴布置。 阴极布置在放电通道的外部并与阳极电连接。 阴极电连接到阳极。 磁场产生电路（50）用于向放电通道产生磁场。 气体供给单元（70）将流入气体供给到排出通道。 冷却单元（80）冷却气体供给单元和排出通道中的一个。

公开(公告)号：KR100362160B1

公开(公告)日：2002-11-23

申请号：KR1019990053818

申请日：1999-11-30

Applicant: 한국과학기술연구원

Inventor： 고석근 ,  서용석 ,  김형준 ,  조정

IPC: C08J7/00

Abstract: 본발명은이온보조반응법을이용한폴리올레핀또는열가소성수지의표면개질과이를이용한나일론수지의강인화방법및 고분자블렌드조성물에관한것으로, 폴리올레핀수지또는열가소성수지분말에이온빔을조사하면서반응성가스를첨가하여상기폴리올레핀수지또는열가소성수지분말의표면을기능화시키고, 기능화된폴리올레핀수지또는열가소성수지분말을나일론수지와블렌딩시켜형성되는나일론수지와폴리올레핀수지의블렌드를제공한다. 본발명에의한나일론과폴리올레핀수지또는열가소성수지의블렌드는기존의단순 2성분계블렌드에비해그 기계적성능, 즉연신특성과내충격성이우수하며내열성이우수하고접합성이뛰어나며, 이를제조함으로써고가의나일론수지를대체할수 있다.

公开(公告)号：KR100345289B1

公开(公告)日：2002-07-25

申请号：KR1019990039876

申请日：1999-09-16

Applicant: 한국과학기술연구원

Inventor： 고석근 ,  조정

IPC: C08J7/00

CPC classification number: C08J7/12

Abstract: 본발명은수소이온보조반응(Ion Assist Reaction)에의하여고분자를표면처리하여표면이하층을친수성작용기로변환시키는고분자표면처리방법으로서, 수소이온빔으로고분자표면에존재하는 C-H 혹은 C-H-O 결합을손상시키면서표면에반응성기체인산소를주입시켜표면및 그이하층에새로운화학결합종을만드는새로운방법이다. 기존의아르곤이나기타이온빔을이용하여표면처리한경우에비하여수소이온빔의경우는표면에형성된친수성기뿐만아니라표면이하층 (100Å이상)까지도친수성작용기를형성하였으며접촉각이감소하였고특히물속에보관하였을경우장기간보관하여도표면과그이하층에형성된친수성작용기가그대로유지되었으며공기중에서노출하였을경우 C-H-O로형성된 PC와 PET등은접촉각의회복도가 15도미만으로장시간경과후 측정하여도표면의친수성작용기가그대로유지하였다. 이러한수소이온보조반응법은휴대용밧데리의전해액의삼투압으로사용되는폴리에틸렌분리막의처리등에응용될수 있는데, 수소이온보조반응법을통하여고분자삼투압의최대단점인기공을통한전해액의이동이용이해졌고분리속도가향상되었으며무엇보다장시간사용할때 우려되는기계적강도도높아져분리막이안고있는문제점을해결하고표면만을친수성으로변화시킬수 있었다.

公开(公告)号：KR1020020026555A

公开(公告)日：2002-04-10

申请号：KR1020027001202

申请日：2000-06-01

Applicant: 한국과학기술연구원

Inventor： 고석근 ,  조정

IPC: H01L21/28

CPC classification number: H01L21/76856 ,  H01L21/28568 ,  H01L21/76838 ,  H01L21/76859 ,  H01L21/76862 ,  H01L21/76864 ,  H01L2221/1078

Abstract: PURPOSE: A platinum electrode structure and method for enhancing adhesion between semiconductor substrate and platinum electrode are provided to enhance the adhesion of a Pt thin film by depositing Ti on a semiconductor substrate and modifying the surface of Ti with ion beam of low energy (a few keV), thereby to restrict the influence of an interface resulting from temperature increases. CONSTITUTION: A platinum electrode structure for a semiconductor comprises a semiconductor substrate, a TiN/Ti gradient layer formed at an upper portion of the substrate, and a Pt thin film formed at an upper portion of the gradient layer. A method of enhancing adhesion between a semiconductor substrate and a platinum electrode comprises depositing a Ti seed layer on the semiconductor substrate, forming a TiN/Ti gradient layer by irradiating nitrogen ion beam and injecting reaction gas to the surface of the Ti seed layer, and depositing a Pt thin film on the TiN/Ti gradient layer.

Abstract translation: 目的：提供一种用于增强半导体衬底和铂电极之间的粘附性的铂电极结构和方法，以通过在半导体衬底上沉积Ti来改善Pt薄膜的粘附，并用低能量的离子束（几个 keV），从而限制由温度升高引起的界面的影响。 构成：用于半导体的铂电极结构包括半导体衬底，在衬底的上部形成的TiN / Ti梯度层和形成在梯度层的上部的Pt薄膜。 一种增强半导体衬底和铂电极之间的粘附性的方法包括在半导体衬底上沉积Ti种子层，通过照射氮离子束并将反应气体注入Ti籽晶层的表面形成TiN / Ti梯度层，以及 在TiN / Ti梯度层上沉积Pt薄膜。