Abstract:
PURPOSE: In a method of modifying a surface of polymer membrane by ion assisted reaction, the surface of the polymer membrane is processed according to the dose of the ion irradiation and the kind of the ion beam, thereby varying the membrane surface to hydrophilicity. In addition, the size of the pores is controlled according to the irradiation dose of the ion beam, thereby enabling water penetration or electrolyte transmission. The surface modification does not change the characteristics of the membrane itself. Since the surface characteristics are merely changed, even if the membrane is used for a long time, the membrane characteristics do not deteriorate. Moreover, the size of the pores can be adjusted, thereby easily controlling porosity of the various kinds of polymer membranes requiring the selective penetrability. Also, the electrolyte penetrability is remarkably improved. CONSTITUTION: The surface modification method for a polymer membrane by using an ion assisted reaction to control the size and number of pores on the surface of the polymer membrane and to form hydrophilic groups on the polymer membrane, comprises irradiating an ion beam to the polymer membrane; and injecting simultaneously a reaction gas.
Abstract:
PURPOSE: A method for treating surface of high molecular is provided which can maintain hydrophilic functional group under water for a long period thus keep the surface condition very stable, as well as can improve the movement of electrolyte, the rate of electrolysis, and mechanical strength in high molecular separating membrane by using ion assist reaction to treat the surface of high molecule of C, and H or C, H, and O, then increasing the formation of hydrophilic functional groups to the layer beneath the surface. CONSTITUTION: A method for treating surface of high molecular using ion assist reaction characteristically comprises the steps of: irradiating hydrogen having a certain energy to the surface of a high molecular material at the interval of 15-90 centimeter, under vacuum condition, and blowing oxygen as a reactive gas to the surface of the high molecular material, wherein the amount of hydrogen irradiation is in the range of 10¬15-10¬17 ions/cm¬2, and the energy that the hydrogen has is 0.5-1.5keV to activate the surface of the high molecular materials, and wherein the amount of the reactive gas, oxygen can be varied depending on the pump capacity, and the degree of vacuum is set to the range of 30-70 torr.
Abstract translation:目的:提供一种高分子表面处理方法,可长时间保持水中的亲水性官能团,保持表面状态非常稳定,可改善电解液的运动,电解速率和机械强度 在高分子分离膜中,通过使用离子辅助反应来处理高分子C,H或C,H和O的表面,然后增加亲水官能团的形成到表面下面的层。 构成:使用离子辅助反应处理高分子表面的方法特征在于包括以下步骤:在真空条件下以15-90厘米的间隔向高分子材料的表面照射具有一定能量的氢,并且吹入氧气 作为与高分子材料表面的反应性气体,其中氢照射的量在10-15×10 17离子/ cm 2的范围内,氢的能量为0.5-1.5keV至 激活高分子材料的表面,并且其中反应气体的量可以根据泵的容量而变化,并且真空度设定在30-70乇的范围内。
Abstract:
PURPOSE: An apparatus for surface modification of polymer, metal and ceramic materials using ion beam is provided, which is capable of controlling the amount of a reaction gas and the energy of an ion beam, modifying the surface of a powder material and implementing a continuous surface modification of a material. CONSTITUTION: In case irradiating an ion beam onto the surface of a metallic thin film, oxide thin film or organic material (200) having curved surfaces, an attraction force or repulsion force between the ions from the ion gun (210) and the surfaces of the material is generated by applying a voltage from a voltage source (220) to the material to be surface-modified simultaneously while Ar+ ions from the ion gun are accelerated, so that a charge distortion may be obtained to modify the composition and shapes of the surface of the material.
Abstract:
이온빔 (IB)을 이용한 고분자, 금속 및 세라믹 재료의 표면처리장치가 개시되어 있는데, 표면처리되는 재료에 인가되는 전압 (22)을 공급하고 제어함으로써 재료에 조사되는 이온빔 (IB) 에너지를 조절할 수 있고, 이온빔이 조사되는 진공조 영역에서의 반응성 가스 진공도를 이온빔이 발생되는 영역에서의 것과 다르게 하고, 또한 양면 조사 처리 및 연속 처리를 적용할 수 있다.
Abstract:
본 발명은 이온 빔을 이용한 재료의 표면 처리 장치에 관한 것으로, 표면 처리되는 시편에 전압을 인가하고 조절하여 시편에 조사되는 이온 빔 에너지를 조절할 수 있고, 이온 도움 반응 장치에 이용되는 반응성 가스의 진공도를 이온 빔이 조사되는 부분과 이온 빔이 발생되는 부분에서 차별화시킬 수 있고, 양면 조사 방식 내지 연속 프로세스에 적용될 수 있는 표면 처리 장치를 제공한다.
Abstract:
The present invention relates to a platinum electrode structure for a semiconductor, having: a semiconductor substrate; a TiN/Ti gradient layer formed at an upper portion of the substrate; and a Pt thin film formed at an upper portion of the gradient layer. In addition, the present invention relates to a method for enhancing adhesion between a semiconductor substrate and a platinum electrode, by: depositing a Ti seed layer on the semiconductor substrate; forming a TiN/Ti gradient layer by irradiating nitrogen ion beam and injecting reaction gas to the surface of the Ti seed layer; and depositing a Pt thin film on the TiN/Ti gradient layer.
Abstract:
PURPOSE: A plasma accelerator with a closed electron drift is provided to enhance the relative efficiency by using low-priced gases such as Argon and Neon as well as high-priced gases such as Xenon and Krypton. CONSTITUTION: A discharge channel(10) is used for ionizing and accelerating inflow gases. An anode is arranged coaxially to the discharge channel. A cathode is arranged at the outside of the discharge channel and is electrically connected to the anode. The cathode is electrically connected to the anode. A magnetic field generation circuit(50) is used for generating magnetic field to the discharge channel. A gas supply unit(70) supplies the inflow gases to the discharge channel. A cooling unit(80) cools one of the gas supply unit and the discharge channel.
Abstract:
PURPOSE: A platinum electrode structure and method for enhancing adhesion between semiconductor substrate and platinum electrode are provided to enhance the adhesion of a Pt thin film by depositing Ti on a semiconductor substrate and modifying the surface of Ti with ion beam of low energy (a few keV), thereby to restrict the influence of an interface resulting from temperature increases. CONSTITUTION: A platinum electrode structure for a semiconductor comprises a semiconductor substrate, a TiN/Ti gradient layer formed at an upper portion of the substrate, and a Pt thin film formed at an upper portion of the gradient layer. A method of enhancing adhesion between a semiconductor substrate and a platinum electrode comprises depositing a Ti seed layer on the semiconductor substrate, forming a TiN/Ti gradient layer by irradiating nitrogen ion beam and injecting reaction gas to the surface of the Ti seed layer, and depositing a Pt thin film on the TiN/Ti gradient layer.