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公开(公告)号：KR1020140102451A
公开(公告)日：2014-08-22
申请号：KR1020130015754
申请日：2013-02-14
Applicant: 한국과학기술원
CPC classification number: G02B6/0229 , B82Y40/00 , G02B2207/101 , G03F1/14 , H01L29/0665 , H01L29/0692
Abstract: The present invention relates to a manufacturing method for an optical apparatus, etc. using a vertical nanostructure, which comprises: a step of preparing at least one substrate among a single crystal semiconductor substrate such as Si and Ge, a III-V compound semiconductor substrate such as GaAs and InP, and a silicon on insulator (SOI); a step of patterning a desired vertical nanostructure on the washed substrate using one or more methods between a lithography method and a self-assembly template method; a step of depositing catalyst metal, which includes one among gold, silver, platinum, and two or more combinations thereof, on the upper part of the substrate in a reverse pattern of the vertical nanostructure to be finally completed; and a step of manufacturing the vertical nanostructure using a metal catalyst etching method which is to submerge into a solution where hydrofluoric acid (HF) and hydrogen peroxide (H_2O_2) are mixed. Therefore, the manufacturing method can easily manufacture fine and elaborate patterns by manufacturing a grid structure using the metal catalyst etching method. The optical apparatus with a SWG nanostructure manufactured thereby can provide more effective performance than a structure manufactured by an existing dry etching method.
Abstract translation: 本发明涉及使用垂直纳米结构的光学装置等的制造方法，其包括：在诸如Si和Ge的单晶半导体衬底中制备至少一个衬底的步骤，III-V族化合物半导体衬底 例如GaAs和InP，以及绝缘体上硅（SOI）; 在光刻方法和自组装模板方法之间使用一种或多种方法在洗涤的衬底上图案化所需的垂直纳米结构的步骤; 在垂直纳米结构的反向图案中，在基板的上部沉积包含金，银，铂及其两种或更多种组合的催化剂金属的步骤，以最终完成; 以及使用浸渍在氢氟酸（HF）和过氧化氢（H_2O_2））的溶液中的金属催化剂蚀刻法制造立式纳米结构体的工序。 因此，通过使用金属催化剂蚀刻方法制造栅格结构，可以容易地制造精细和精细的图案。 由此制造的具有SWG纳米结构的光学装置可以比通过现有的干蚀刻方法制造的结构提供更有效的性能。
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公开(公告)号：KR1020070079788A
公开(公告)日：2007-08-08
申请号：KR1020060010749
申请日：2006-02-03
CPC classification number: H04B7/066 , H04B7/0417 , H04B7/0626 , H04B7/0639 , H04L25/0204 , H04L25/022 , H04L27/2601
Abstract: An apparatus and a method for determining a beamforming vector in a codebook-based beamforming system are provided to improve link performance by determining feedback information in consideration of a time-variant channel and to guarantee that a beamforming vector, created based on feedback information, is optimal at a specific time interval. A receiver in a codebook-based transmission beamforming system comprises a linear MMSE(Minimum Mean Square Error) predictor(412), an effective channel gain calculator(414), and a codebook selector(416). The linear MMSE predictor(412) creates future channel values for a specific interval of the future by using M numbers of channel estimation values of the past from the present. The effective channel gain calculator(414) calculates and outputs effective channel gain values for all the transmission beamforming vectors of a codebook by using the future channel values. The codebook selector(416) feeds back a codebook index equivalent to the maximum value among the outputted effective channel gain values to a transmitter.
Abstract translation: 提供了一种用于确定基于码本的波束形成系统中的波束形成向量的装置和方法，以通过考虑时变信道确定反馈信息来改善链路性能，并且确保基于反馈信息创建的波束形成向量是 在特定的时间间隔最优。 基于码本的传输波束成形系统中的接收机包括线性MMSE（最小均方误差）预测器（412），有效信道增益计算器（414）和码本选择器（416）。 线性MMSE预测器（412）通过使用从当前的过去的M个信道估计值创建将来的特定间隔的未来信道值。 有效信道增益计算器（414）通过使用未来信道值来计算并输出码本的所有传输波束成形向量的有效信道增益值。 码本选择器（416）将输出的有效信道增益值中相当于最大值的码本索引反馈给发射机。
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公开(公告)号：KR101438797B1
公开(公告)日：2014-09-16
申请号：KR1020130015754
申请日：2013-02-14
Applicant: 한국과학기술원
Abstract: 본원 발명은 수직 나노구조를 이용하여 광학 기기 등을 제작하는 방법으로, Si, Ge 등의 단결정 반도체 기판, GaAs, InP 등의 III-V 화합물 반도체 기판, SOI (silicon on insulator) 기판 중 적어도 어느 하나인 기판을 준비 단계, 상기 세정된 기판 상에 리소그라피(Lithography) 방법, 셀프 어셈블리 템플릿(Self-assembly template) 방법 중 어느 하나 이상의 방법을 이용하여 원하는 수직 나노 구조를 패터닝 하는 단계, 금, 은, 백금 등의 금속 중 어느 하나, 둘 이상의 조합을 포함하는 촉매 금속을 최종적으로 완성하고자 하는 수직 나노구조의 역상 패턴으로 기판 상부에 증착하는 단계, 불산(HF)과 과산화수소(H
2 O
2 ) 혼합 수용액에 담지하는 금속 촉매 식각 방법을 이용하여 수직 나노구조를 제작하는 단계 등을 이용한다.
이를 통해, 금속 촉매 식각 방법을 이용하여 격자 구조를 제작함으로써, 보다 더 미세하고, 정교한 패턴들을 용이하게 제작하고자 한다.
이와 같이 제작된 SWG 구조를 가진 나노 구조를 갖는 광학 기기는 기존의 건식 식각을 이용하여 제작된 구조에 비하여 보다 더 효과적인 성능을 가질 수 있다.-
Patent Agency Ranking
公开(公告)号：KR101429093B1
公开(公告)日：2014-08-12
申请号：KR1020130015979
申请日：2013-02-14
Applicant: 한국과학기술원
CPC classification number: G02B3/0006 , B82Y40/00 , G02B5/201 , G02B6/0229 , G02B6/32 , G02B2207/101
Abstract: When an array of vertical nanowires using silicone is manufactured, a structure with characteristics of an optical lens can be formed only by regulating a fill factor thereof. Therefore, the manufacturing method can miniaturize the size of a lens including the height of a lens and can simply realize the lens through a lithography process and an etching process which are existing complementary metal-oxide semiconductor (CMOS) processes. Because the dielectric constant of silicone, etc. does not have a significant different from the dielectric constant of air, a lens with a short focal length can be realized. Because of an empty space inside a lens, a light lens can be manufactured. In addition, when a lens is manufactured using the above method, the size and focus of the lens can be regulated by freely regulating the area and height thereof. The vertical nanowire can be simply manufactured through a top-down method or a bottom-up method including a metal catalyst etching method, a dry etching method, and a vapor-liquid-solid method (VLS) growth method.
Abstract translation: 当制造使用硅氧烷的垂直纳米线的阵列时，可以仅通过调节其填充因子来形成具有光学透镜特性的结构。 因此，制造方法可以使包括透镜的高度的透镜的尺寸小型化，并且可以通过存在互补金属氧化物半导体（CMOS）工艺的光刻工艺和蚀刻工艺简单地实现透镜。 由于硅酮等的介电常数与空气的介电常数没有显着差异，所以可以实现焦距短的透镜。 由于透镜内部有空的空间，可以制造光透镜。 此外，当使用上述方法制造透镜时，可以通过自由调节其面积和高度来调节透镜的尺寸和焦点。 垂直纳米线可以简单地通过自上而下的方法或包括金属催化剂蚀刻方法，干法蚀刻法和汽 - 液 - 固溶法（VLS）生长法）的自下而上的方法制造。
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5.发明授权측벽 스페이서 기술과 촉매 금속 식각 방법을 이용한 수직 나노튜브 구조 제조 방법 및 이에 의하여 제조된 수직 나노튜브 구조 有权使用边墙间隔技术制造垂直硅纳米管的方法和金属辅助化学蚀刻工艺及其制造的垂直硅纳米管
公开(公告)号：KR101355930B1
公开(公告)日：2014-01-28
申请号：KR1020120082380
申请日：2012-07-27
Applicant: 한국과학기술원
IPC: H01L27/16 , H01L21/306 , H01L21/027
CPC classification number: H01L27/16 , B82B1/001 , B82B3/0019 , H01L21/0274 , H01L21/30604 , H01L21/30621
Abstract: Provided is a manufacturing method for a vertical nanotube comprising a step of patterning a round hole on a base plate; a step of forming a spacer on the sidewall of the patterned hole; a step of metalizing catalytic metal on the base plate and on the hole; a step of removing the spacer from the sidewall of the hole; and a step of manufacturing a vertical nanotube by applying an etchant to the base plate and etching the base plate but the area on which the spacer is formed. [Reference numerals] (AA) Step of patterning a round hole on a base plate; (BB) Step of forming a spacer on the sidewall of the patterned hole; (CC) Step of metalizing catalytic metal on the base plate and on the hole; (DD) Step of removing the spacer from the sidewall of the hole; (EE) Step of manufacturing a vertical nanotube by etching the base plate but the area on which the spacer is formed
Abstract translation: 本发明提供一种垂直型纳米管的制造方法，其特征在于，在基板上形成圆孔的图形化工序; 在图案化孔的侧壁上形成间隔物的步骤; 催化金属在基板和孔上金属化的步骤; 从所述孔的侧壁去除所述间隔件的步骤; 以及通过向基板施加蚀刻剂并蚀刻基板而形成间隔件的区域来制造垂直纳米管的步骤。 （附图标记）（AA）在基板上图案化圆孔的步骤; （BB）在图案化孔的侧壁上形成间隔物的步骤; （CC）在基板和孔上金属化催化金属的步骤; （DD）从所述孔的侧壁去除所述间隔件的步骤; （EE）通过蚀刻基板而形成间隔物的区域来制造垂直纳米管的步骤
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公开(公告)号：KR101354006B1
公开(公告)日：2014-01-21
申请号：KR1020120088457
申请日：2012-08-13
Applicant: 한국과학기술원
IPC: H01L27/16
Abstract: The present invention discloses a bottom electrode using vertical silicon nanowires and a method for fabricating the same. A catalyst etching process is simplified by using a property where a catalyst metal used for a catalyst etching method remains under the nanowires, without a separate post lower electrode process. The contact resistance of silicon and silicide are greatly improved by using a silicide formation metal thin film. The method includes a step for forming a lamination pattern structure where the silicide formation metal thin film and a catalyst metal thin film of a mesh shape are layered on the upper part of the silicon substrate; a step for manufacturing the vertical silicon nanowires in the silicon substrate by a metal catalyst etching process; and a step for forming a silicide by silicon reaction by performing a thermal process on the silicide formation metal thin film.
Abstract translation: 本发明公开了一种使用垂直硅纳米线的底部电极及其制造方法。 催化剂蚀刻工艺通过使用催化剂蚀刻方法中使用的催化剂金属保留在纳米线下方而不需要单独的下部下电极工艺的特性来简化。 通过使用硅化物形成金属薄膜，硅和硅化物的接触电阻大大提高。 该方法包括形成硅化物形成金属薄膜和网状催化剂金属薄膜层叠在硅衬底上部的叠层图形结构的步骤; 通过金属催化剂蚀刻工艺制造硅衬底中的垂直硅纳米线的步骤; 以及通过在硅化物形成金属薄膜上进行热处理，通过硅反应形成硅化物的步骤。
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7.发明授权촉매 금속 식각 방법을 이용한 수직 나노 구조체의 제작방법, 이를 이용하여 제조된 수직 실리콘 나노 구조체, 및 이를 포함하는 소자 有权通过金属辅助化学蚀刻方法使用的垂直对准的硅纳米结构的制造方法，本方法制成的垂直配位的硅纳米结构，以及包含垂直置换的硅纳米结构的器件。
公开(公告)号：KR101353373B1
公开(公告)日：2014-01-21
申请号：KR1020120134272
申请日：2012-11-26
Applicant: 한국과학기술원
IPC: H01L21/306 , H01L27/16
Abstract: Provided are a method for fabricating vertical-type silicon nanowires using a metal assisted chemical etching method, a nanostructure fabricated by the method, and a device including the same. The method for fabricating vertical-type silicon nanowires using a metal assisted chemical etching method according to the present invention fabricates nanowires which are densely arranged and long in order to utilize the nanowires efficiently. When silicon nanowires having a large aspect ratio are fabricated, leaning of the nanowires may occur and as a result, adjacent nanowires may agglomerate together. In order to prevent the adjacent nanowires from agglomerating during a metal assisted chemical etching process, the method for fabricating vertical-type silicon nanowires according to the present invention fabricates a mechanically stable structure to prevent the nanowires from leaning.
Abstract translation: 提供了使用金属辅助化学蚀刻方法制造垂直型硅纳米线的方法，通过该方法制造的纳米结构以及包括该纳米结构的装置。 使用根据本发明的金属辅助化学蚀刻方法制造垂直型硅纳米线的方法制造密集排列并且长时间以有效利用纳米线的纳米线。 当制造具有大纵横比的硅纳米线时，可能发生纳米线的倾斜，结果，相邻的纳米线可以聚集在一起。 为了防止在金属辅助化学蚀刻工艺中相邻的纳米线聚集，根据本发明的用于制造垂直型硅纳米线的方法制造机械稳定的结构以防止纳米线倾斜。
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公开(公告)号：KR100867315B1
公开(公告)日：2008-11-06
申请号：KR1020060010749
申请日：2006-02-03
CPC classification number: H04B7/066 , H04B7/0417 , H04B7/0626 , H04B7/0639 , H04L25/0204 , H04L25/022 , H04L27/2601
Abstract: 본 발명은 코드북 기반의 송신 빔포밍 시스템에서 빔포밍 벡터를 결정하기 위한 장치 및 방법에 관한 것이다. 본 발명에 따른 코드북 기반의 송신 빔포밍 시스템에서 수신기의 피드백 방법은, 현재로부터 과거 M개의 채널추정값들을 이용해서 미래 소정 구간에 대한 미래 채널값들을 생성하는 과정과, 상기 미래 채널값들을 이용해서 코드북 내의 모든 송신 빔포밍 벡터들에 대한 유효채널이득값들을 산출하는 과정과, 상기 유효채널이득값들 중 최대값에 해당하는 코드북 인덱스를 송신기로 피드백하는 과정을 포함한다. 이와 같은 본 발명은 시변 채널을 고려하여 피드백 정보를 결정하기 때문에, 링크 성능을 향상시킬 수 있다.
MIMO-OFDM, 송신 빔포밍, 코드북, 2차원 보간
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