公开(公告)号：KR101429093B1

公开(公告)日：2014-08-12

申请号：KR1020130015979

申请日：2013-02-14

Applicant: 한국과학기술원

Inventor： 이석희 ,  최지훈 ,  정현호

IPC: G02B3/00 ,  B81C1/00 ,  B82Y40/00

CPC classification number: G02B3/0006 ,  B82Y40/00 ,  G02B5/201 ,  G02B6/0229 ,  G02B6/32 ,  G02B2207/101

Abstract: When an array of vertical nanowires using silicone is manufactured, a structure with characteristics of an optical lens can be formed only by regulating a fill factor thereof. Therefore, the manufacturing method can miniaturize the size of a lens including the height of a lens and can simply realize the lens through a lithography process and an etching process which are existing complementary metal-oxide semiconductor (CMOS) processes. Because the dielectric constant of silicone, etc. does not have a significant different from the dielectric constant of air, a lens with a short focal length can be realized. Because of an empty space inside a lens, a light lens can be manufactured. In addition, when a lens is manufactured using the above method, the size and focus of the lens can be regulated by freely regulating the area and height thereof. The vertical nanowire can be simply manufactured through a top-down method or a bottom-up method including a metal catalyst etching method, a dry etching method, and a vapor-liquid-solid method (VLS) growth method.

Abstract translation: 当制造使用硅氧烷的垂直纳米线的阵列时，可以仅通过调节其填充因子来形成具有光学透镜特性的结构。 因此，制造方法可以使包括透镜的高度的透镜的尺寸小型化，并且可以通过存在互补金属氧化物半导体（CMOS）工艺的光刻工艺和蚀刻工艺简单地实现透镜。 由于硅酮等的介电常数与空气的介电常数没有显着差异，所以可以实现焦距短的透镜。 由于透镜内部有空的空间，可以制造光透镜。 此外，当使用上述方法制造透镜时，可以通过自由调节其面积和高度来调节透镜的尺寸和焦点。 垂直纳米线可以简单地通过自上而下的方法或包括金属催化剂蚀刻方法，干法蚀刻法和汽 - 液 - 固溶法（VLS）生长法）的自下而上的方法制造。

公开(公告)号：KR101355930B1

公开(公告)日：2014-01-28

申请号：KR1020120082380

申请日：2012-07-27

Applicant: 한국과학기술원

Inventor： 이석희 ,  정현호 ,  최지훈

IPC: H01L27/16 ,  H01L21/306 ,  H01L21/027

CPC classification number: H01L27/16 ,  B82B1/001 ,  B82B3/0019 ,  H01L21/0274 ,  H01L21/30604 ,  H01L21/30621

Abstract: Provided is a manufacturing method for a vertical nanotube comprising a step of patterning a round hole on a base plate; a step of forming a spacer on the sidewall of the patterned hole; a step of metalizing catalytic metal on the base plate and on the hole; a step of removing the spacer from the sidewall of the hole; and a step of manufacturing a vertical nanotube by applying an etchant to the base plate and etching the base plate but the area on which the spacer is formed. [Reference numerals] (AA) Step of patterning a round hole on a base plate; (BB) Step of forming a spacer on the sidewall of the patterned hole; (CC) Step of metalizing catalytic metal on the base plate and on the hole; (DD) Step of removing the spacer from the sidewall of the hole; (EE) Step of manufacturing a vertical nanotube by etching the base plate but the area on which the spacer is formed

Abstract translation: 本发明提供一种垂直型纳米管的制造方法，其特征在于，在基板上形成圆孔的图形化工序; 在图案化孔的侧壁上形成间隔物的步骤; 催化金属在基板和孔上金属化的步骤; 从所述孔的侧壁去除所述间隔件的步骤; 以及通过向基板施加蚀刻剂并蚀刻基板而形成间隔件的区域来制造垂直纳米管的步骤。 （附图标记）（AA）在基板上图案化圆孔的步骤; （BB）在图案化孔的侧壁上形成间隔物的步骤; （CC）在基板和孔上金属化催化金属的步骤; （DD）从所述孔的侧壁去除所述间隔件的步骤; （EE）通过蚀刻基板而形成间隔物的区域来制造垂直纳米管的步骤

公开(公告)号：KR102201105B1

公开(公告)日：2021-01-11

申请号：KR1020190009496

申请日：2019-01-24

Applicant: 한국과학기술원

Inventor： 박수경 ,  임혜림 ,  정현호

IPC: A61B5/11 ,  A61B5/00

Abstract: 인체운동의역학정보추정방법및 그장치로서, 인체의하지를스프링으로모델링한탄성보행모델을이용하여, 인체의운동궤적으로부터하지스프링의길이변화및 하지스프링의각도를계산하는단계, 그리고상기길이변화및 상기각도를이용하여, 지면반력, 하지관절각도, 발목관절궤적및 발목관절토크중 적어도하나를포함하는운동역학정보를추정하는단계를포함하고, 상기탄성보행모델은, 중심이맞지않고커브가표현된인체의발을모델링한원형발, 인체의질량중심(CoM, Center of Mass)에서하지의발목관절까지를모델링한하지-발목스프링, 그리고상기발목관절에서상기원형발에이르는하지를모델링한발목-발스프링을포함한다.

公开(公告)号：KR101716851B1

公开(公告)日：2017-03-16

申请号：KR1020150163401

申请日：2015-11-20

Applicant: 한국과학기술원 ,  한국기계연구원

Inventor： 유승협 ,  문한얼 ,  정현호 ,  최대근 ,  김한중 ,  박창구

IPC: G03F7/00 ,  B81C1/00

Abstract: 용액재료를이용한미세패턴제조방법에서, 베이스기판상에친수성막및 소수성막을포함하는제1 층을형성한다. 베이스몰드상에제1 패턴을형성하여임프린팅몰드를제작한다. 상기제1 패턴을포함한임프린팅몰드로상기제1 층을패터닝한다. 상기패터닝으로제2 패턴이형성된상기기판상에용액을도포한다. 상기도포된용액을건조한다.

公开(公告)号：KR101627430B1

公开(公告)日：2016-06-03

申请号：KR1020140173315

申请日：2014-12-04

Applicant: 한국과학기술원

Inventor： 유승협 ,  정현호

IPC: B82B3/00 ,  C23C16/06

CPC classification number: B82B3/00 ,  B82B3/0004 ,  C23C16/06

Abstract: 금속나노고리제조방법으로, 기판에구멍구조를패터닝하는단계; 상기패터닝된구멍구조의측벽에스페이서를형성하는단계; 및상기기판에금속을증착하여금속고리구조를형성하는단계를포함하는것을특징으로하는금속나노고리제조방법이제공된다. 본발명에따르면, 수십나노미터급의두께를가지는금속나노고리구조를쉽게대면적으로제작할수 있다. 따라서, 기존의금속나노디스크구조에비하여다양한크기조절변수로인해조율을통해적외선영역에서플라즈몬효과를조절가능하게할 수있으며, 또한기존의반도체공정기반의측벽스페이서공정을통해별도의나노급 패터닝공정없이웨이퍼스케일의대면적으로금속나노고리구조제작이가능하다.

Abstract translation: 本发明涉及金属纳米结构体的制造方法。 该方法包括以下步骤：在衬底上构图孔结构; 在图案化的孔结构的侧壁处形成间隔物; 以及将金属沉积到所述衬底上以形成金属环结构。 根据本发明，可以容易地制造具有大面积的几十纳米厚度的金属纳米结构。 因此，与现有的金属纳米结构相比，可以通过调制各种尺寸控制参数来控制IR区域中的等离子体激发效应。 此外，可以通过常规的基于半导体工艺的侧壁间隔技术来制造大尺度的大面积金属纳米结构，而不需要单独的纳米级图案化工艺。

公开(公告)号：KR1020140102451A

公开(公告)日：2014-08-22

申请号：KR1020130015754

申请日：2013-02-14

Applicant: 한국과학기술원

Inventor： 이석희 ,  정현호 ,  최지훈 ,  정우진

IPC: G02B3/00 ,  G02B3/08 ,  B82Y40/00

CPC classification number: G02B6/0229 ,  B82Y40/00 ,  G02B2207/101 ,  G03F1/14 ,  H01L29/0665 ,  H01L29/0692

Abstract: The present invention relates to a manufacturing method for an optical apparatus, etc. using a vertical nanostructure, which comprises: a step of preparing at least one substrate among a single crystal semiconductor substrate such as Si and Ge, a III-V compound semiconductor substrate such as GaAs and InP, and a silicon on insulator (SOI); a step of patterning a desired vertical nanostructure on the washed substrate using one or more methods between a lithography method and a self-assembly template method; a step of depositing catalyst metal, which includes one among gold, silver, platinum, and two or more combinations thereof, on the upper part of the substrate in a reverse pattern of the vertical nanostructure to be finally completed; and a step of manufacturing the vertical nanostructure using a metal catalyst etching method which is to submerge into a solution where hydrofluoric acid (HF) and hydrogen peroxide (H_2O_2) are mixed. Therefore, the manufacturing method can easily manufacture fine and elaborate patterns by manufacturing a grid structure using the metal catalyst etching method. The optical apparatus with a SWG nanostructure manufactured thereby can provide more effective performance than a structure manufactured by an existing dry etching method.

Abstract translation: 本发明涉及使用垂直纳米结构的光学装置等的制造方法，其包括：在诸如Si和Ge的单晶半导体衬底中制备至少一个衬底的步骤，III-V族化合物半导体衬底 例如GaAs和InP，以及绝缘体上硅（SOI）; 在光刻方法和自组装模板方法之间使用一种或多种方法在洗涤的衬底上图案化所需的垂直纳米结构的步骤; 在垂直纳米结构的反向图案中，在基板的上部沉积包含金，银，铂及其两种或更多种组合的催化剂金属的步骤，以最终完成; 以及使用浸渍在氢氟酸（HF）和过氧化氢（H_2O_2））的溶液中的金属催化剂蚀刻法制造立式纳米结构体的工序。 因此，通过使用金属催化剂蚀刻方法制造栅格结构，可以容易地制造精细和精细的图案。 由此制造的具有SWG纳米结构的光学装置可以比通过现有的干蚀刻方法制造的结构提供更有效的性能。

公开(公告)号：KR101354006B1

公开(公告)日：2014-01-21

申请号：KR1020120088457

申请日：2012-08-13

Applicant: 한국과학기술원

Inventor： 이석희 ,  정현호 ,  최지훈

IPC: H01L27/16

Abstract: The present invention discloses a bottom electrode using vertical silicon nanowires and a method for fabricating the same. A catalyst etching process is simplified by using a property where a catalyst metal used for a catalyst etching method remains under the nanowires, without a separate post lower electrode process. The contact resistance of silicon and silicide are greatly improved by using a silicide formation metal thin film. The method includes a step for forming a lamination pattern structure where the silicide formation metal thin film and a catalyst metal thin film of a mesh shape are layered on the upper part of the silicon substrate; a step for manufacturing the vertical silicon nanowires in the silicon substrate by a metal catalyst etching process; and a step for forming a silicide by silicon reaction by performing a thermal process on the silicide formation metal thin film.

Abstract translation: 本发明公开了一种使用垂直硅纳米线的底部电极及其制造方法。 催化剂蚀刻工艺通过使用催化剂蚀刻方法中使用的催化剂金属保留在纳米线下方而不需要单独的下部下电极工艺的特性来简化。 通过使用硅化物形成金属薄膜，硅和硅化物的接触电阻大大提高。 该方法包括形成硅化物形成金属薄膜和网状催化剂金属薄膜层叠在硅衬底上部的叠层图形结构的步骤; 通过金属催化剂蚀刻工艺制造硅衬底中的垂直硅纳米线的步骤; 以及通过在硅化物形成金属薄膜上进行热处理，通过硅反应形成硅化物的步骤。

公开(公告)号：KR101353373B1

公开(公告)日：2014-01-21

申请号：KR1020120134272

申请日：2012-11-26

Applicant: 한국과학기술원

Inventor： 이석희 ,  정현호 ,  최지훈 ,  김태균 ,  임성묵

IPC: H01L21/306 ,  H01L27/16

Abstract: Provided are a method for fabricating vertical-type silicon nanowires using a metal assisted chemical etching method, a nanostructure fabricated by the method, and a device including the same. The method for fabricating vertical-type silicon nanowires using a metal assisted chemical etching method according to the present invention fabricates nanowires which are densely arranged and long in order to utilize the nanowires efficiently. When silicon nanowires having a large aspect ratio are fabricated, leaning of the nanowires may occur and as a result, adjacent nanowires may agglomerate together. In order to prevent the adjacent nanowires from agglomerating during a metal assisted chemical etching process, the method for fabricating vertical-type silicon nanowires according to the present invention fabricates a mechanically stable structure to prevent the nanowires from leaning.

Abstract translation: 提供了使用金属辅助化学蚀刻方法制造垂直型硅纳米线的方法，通过该方法制造的纳米结构以及包括该纳米结构的装置。 使用根据本发明的金属辅助化学蚀刻方法制造垂直型硅纳米线的方法制造密集排列并且长时间以有效利用纳米线的纳米线。 当制造具有大纵横比的硅纳米线时，可能发生纳米线的倾斜，结果，相邻的纳米线可以聚集在一起。 为了防止在金属辅助化学蚀刻工艺中相邻的纳米线聚集，根据本发明的用于制造垂直型硅纳米线的方法制造机械稳定的结构以防止纳米线倾斜。

公开(公告)号：KR1020130084562A

公开(公告)日：2013-07-25

申请号：KR1020120005434

申请日：2012-01-17

Applicant: 한국과학기술원

Inventor： 이석희 ,  정현호

IPC: B82B1/00 ,  B82Y10/00

CPC classification number: H01L29/0669 ,  B82Y15/00 ,  B82Y40/00 ,  H01L21/02603 ,  H01L29/413

Abstract: PURPOSE: A nano device of a vertical nanowire structure using graphene and a method for forming the same are provided to prevent upper layer metals from penetrating into the gaps of nanowires by inserting graphene between nanowires and an upper layer in a nano device of a vertical nanowire structure. CONSTITUTION: A nano device comprises a plurality of nanowires (20), a graphene layer (30), and an upper layer. The nanowires are vertically stood on a substrate (10) at a predetermined interval. The graphene layer is formed on the upper end of the nanowires. The upper layer is formed on the upper side of the graphene layer. The upper layer is a metal electrode (40). A method for forming a nano device comprises the steps of: vertically forming a plurality of nanowires on a substrate at a predetermined interval; transferring a pre-grown graphene layer to the upper end of the nanowires; and pattering to form an upper layer on the graphene layer.

Abstract translation: 目的：提供使用石墨烯的垂直纳米线结构的纳米器件及其形成方法，以通过在垂直纳米线的纳米器件中的纳米线和上层之间插入石墨烯来防止上层金属渗透​​到纳米线的间隙中 结构体。 构成：纳米器件包括多个纳米线（20），石墨烯层（30）和上层。 以预定间隔将纳米线垂直地放置在基板（10）上。 石墨烯层形成在纳米线的上端。 上层形成在石墨烯层的上侧。 上层是金属电极（40）。 一种形成纳米器件的方法包括以下步骤：在衬底上以预定间隔垂直形成多个纳米线; 将预生长的石墨烯层转移到纳米线的上端; 并图案化以在石墨烯层上形成上层。

公开(公告)号：KR102031825B1

公开(公告)日：2019-10-15

申请号：KR1020180027089

申请日：2018-03-07

Applicant: 한국과학기술원

Inventor： 유승협 ,  문한얼 ,  정현호

IPC: G03F7/00 ,  G03F7/16 ,  C09D175/14 ,  C09D167/06 ,  C09D4/06 ,  C09D171/00 ,  C09D7/40