公开(公告)号：KR101124226B1

公开(公告)日：2012-03-27

申请号：KR1020110013259

申请日：2011-02-15

Applicant: 한국화학연구원

Inventor： 이선숙 ,  최하나 ,  정택모 ,  정석종 ,  류병환 ,  김창균

IPC: H01L31/0445 ,  H01L31/0216

CPC classification number: Y02E10/50 ,  H01L31/0445 ,  H01L31/0216

Abstract: PURPOSE: A method for manufacturing a CIS thin film is provided to mass-produce a CuInSe2 photoactive layer with a solution process. CONSTITUTION: A CuInSe2 nano particle is made by using copper amino alkoxide, indium amino alkoxide and selenium powder. A coating layer is formed by coating a molybdenum film of a glass substrate with coating solutions including CuInSe2 nano particles. A CuInSe2 thin film is formed by thermally processing the glass substrate with the coating layer between 300 and 600 degrees centigrade.

Abstract translation: 目的：提供一种用于制造CIS薄膜的方法，以大量生产具有溶液工艺的CuInSe 2光敏层。 构成：使用铜氨基醇盐，铟氨基醇盐和硒粉制成CuInSe2纳米颗粒。 通过用包括CuInSe 2纳米颗粒的涂布溶液涂覆玻璃基板的钼膜来形成涂层。 CuInSe 2薄膜是通过在300〜600摄氏度的涂层之间热处理玻璃基板而形成的。