公开(公告)号：WO2013044180A1

公开(公告)日：2013-03-28

申请号：PCT/US2012/056769

申请日：2012-09-22

Applicant: 1366 TECHNOLOGIES INC. ,  SACHS, Emanuel, M.

Inventor： SACHS, Emanuel, M.

IPC: H01L31/18

CPC classification number: H01L31/18 ,  B29C33/40 ,  B29C33/42 ,  B29C33/424 ,  B29C43/021 ,  B29C2033/426 ,  B29C2043/025 ,  B29C2059/023 ,  B81C99/0085 ,  B81C2201/0153 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002

Abstract: A method for imparting a pattern to a flowable resist material on a substrate entails providing a resist layer so thin that during a stamp wedging process, the resist never completely fills the space between the substrate and the bottom surface of a stamp between wedge protrusions, leaving gap everywhere therebetween. A gap remains between the resist and the extended surface of the stamp. If the resist layer as deposited is somewhat thicker than the targeted amount, it will simply result in a smaller gap between resist and tool. The presence of a continuous gap assures that no pressure builds under the stamp. Thus, the force on the protrusions i determined only by the pressure above the stamp and is well controlled, resulting in well-controlled hole sizes. The gap prevents resist from being pumped entirely out of any one region, and thus prevents any regions from being uncovered of resist. The stamp can be pulsed in its contact with the substrate, repeatedly deforming the indenting protrusions. Several pulses clears away any scum layer better than does a single press, as measured by an etch test comparison of the degree to which a normal etch for a normal duration etches away substrate material. A method for imparting a pattern to a flowable resist material on a substrate entails providing a resist layer so thin that during a stamp wedging process, the resist never completely fills the space between the substrate and the bottom surface of a stamp between wedge protrusions, leaving a gap everywhere therebetween. A gap remains between the resist and the extended surface of the stamp.

Abstract translation: 将图案赋予基板上的可流动抗蚀剂材料的方法需要提供如此薄的抗蚀剂层，使得在印模楔入过程中，抗蚀剂不会完全填充基板与楔形凸起之间的印模的底表面之间的空间，留下 差距在其间。 在抗蚀剂和印模的延伸表面之间留有间隙。 如果沉积的抗蚀剂层比目标量稍厚一些，则将简单地导致抗蚀剂和工具之间的较小的间隙。 连续间隙的存在确保印章下没有压力。 因此，突起上的力i仅由压力上方的压力确定并且被良好地控制，导致良好控制的孔尺寸。 间隙防止抗蚀剂完全从任何一个区域泵出，从而防止任何区域不被抗蚀剂覆盖。 印模可以与基板接触地脉动，使压痕突起重复变形。 几个脉冲比单次压机更好地清除任何浮渣层，如通过蚀刻测试比较正常蚀刻对正常时间蚀刻掉的衬底材料的程度所测量的。 将图案赋予基板上的可流动抗蚀剂材料的方法需要提供如此薄的抗蚀剂层，使得在印模楔入过程中，抗蚀剂不会完全填充基板与楔形凸起之间的印模的底表面之间的空间，留下 在它们之间的差距。 在抗蚀剂和印模的延伸表面之间留有间隙。

公开(公告)号：WO2013044181A1

公开(公告)日：2013-03-28

申请号：PCT/US2012/056770

申请日：2012-09-22

Applicant: 1366 TECHNOLOGIES INC. ,  SACHS, Emanuel, M. ,  KANE, Peter, E. ,  GATES, Holly, G. ,  HARRIS, Damian, W. ,  POLITO, Benjamin, F. ,  INIRIO, Hector, A.

Inventor： SACHS, Emanuel, M. ,  KANE, Peter, E. ,  GATES, Holly, G. ,  HARRIS, Damian, W. ,  POLITO, Benjamin, F. ,  INIRIO, Hector, A.

IPC: B29C59/02

CPC classification number: B29B13/02 ,  B29C59/02 ,  B29C2059/023 ,  G03F7/0002

Abstract: A workpiece is transported using a porous belt, which belt delivers a workpiece to a chuck, upon which the workpiece is held by vacuum. The belt can be porous PTFE. A flexible stamp is preheated, before it is applied to a workpiece, by drawing the stamp toward a heated plate, for instance by vacuum.

Abstract translation: 使用多孔带输送工件，该带将工件输送到卡盘，工件通过真空保持在该卡盘上。 带可以是多孔PTFE。 例如通过真空将柔性印模预先加热到被加热板之前，在将其印刷到工件之前进行预热。

公开(公告)号：WO2010080822A1

公开(公告)日：2010-07-15

申请号：PCT/US2010/020245

申请日：2010-01-06

Applicant: 1366 TECHNOLOGIES INC. ,  SACHS, Emanuel, M. ,  WALLACE, Richard, L. ,  BREDT, James, F. ,  POLITO, Benjamin, F. ,  ERSEN, Ali

Inventor： SACHS, Emanuel, M. ,  WALLACE, Richard, L. ,  BREDT, James, F. ,  POLITO, Benjamin, F. ,  ERSEN, Ali

IPC: H01L31/00

CPC classification number: H01L31/022425 ,  H01L21/6715 ,  Y02E10/50

Abstract: Materials that contain liquid are deposited into grooves upon a surface of a work piece, such as a silicon wafer to form a solar cell. Liquid can be dispensed into work piece paths, such as grooves under pressure through a dispensing tube. The tube mechanically tracks in the groove. The tube may be small and rest at the groove bottom, with the sidewalls providing restraint. Or it may be larger and ride on the top edges of the groove. A tracking feature, such as a protrusion, Non-circular cross-sections, molded-on protrusions and lobes also enhance tracking. The tube may be forced against the groove by spring or magnetic loading. Alignment guides, such as lead-in features may guide the tube into the groove. Restoring features along the path may restore a wayward tube. Many tubes may be used. Many work pieces can be treated in a line or on a drum.

Abstract translation: 含有液体的材料沉积在诸如硅晶片的工件的表面上的凹槽中，以形成太阳能电池。 液体可以分配到工件路径中，例如通过分配管的压力下的槽。 管子在凹槽中机械地跟踪。 管可以小并且在槽底部搁置，其中侧壁提供约束。 或者它可能更大并且骑在凹槽的顶部边缘上。 跟踪特征，例如突起，非圆形横截面，模制突起和凸角也增强跟踪。 管可以通过弹簧或磁负载而被迫力抵靠凹槽。 诸如引入特征的对准引导件可以将管引导到凹槽中。 沿着路径还原功能可能会恢复一个顺从的管。 可以使用许多管。 许多工件可以在一条线或一个鼓上进行处理。

公开(公告)号：WO2016122731A1

公开(公告)日：2016-08-04

申请号：PCT/US2015/055460

申请日：2015-10-14

Applicant: 1366 TECHNOLOGIES, INC.

Inventor： JONCZYK, Ralf ,  KERNAN, Brian, D. ,  HUDELSON, Stephen, G.D. ,  LORENZ, Adam, M. ,  SACHS, Emanuel, M.

IPC: H01L21/00

CPC classification number: H01L31/1804 ,  H01L21/00 ,  H01L31/02167 ,  H01L31/022425 ,  H01L31/0288 ,  H01L31/056 ,  H01L31/068 ,  Y02E10/52 ,  Y02E10/547 ,  Y02P70/521

Abstract: A semiconductor wafer forms on a mold containing a dopant. The dopant dopes a melt region adjacent the mold. There, dopant concentration is higher than in the melt bulk. A wafer starts solidifying. Dopant diffuses poorly in solid semiconductor. After a wafer starts solidifying, dopant can not enter the melt. Afterwards, the concentration of dopant in the melt adjacent the wafer surface is less than what was present where the wafer began to form. New wafer regions grow from a melt region whose dopant concentration lessens over time. This establishes a dopant gradient in the wafer, with higher concentration adjacent the mold. The gradient can be tailored. A gradient gives rise to a field that can function as a drift or back surface field. Solar collectors can have open grid conductors and better optical reflectors on the back surface, made possible by the intrinsic back surface field.

Abstract translation: 在包含掺杂剂的模具上形成半导体晶片。 掺杂剂掺杂与模具相邻的熔融区域。 那里，掺杂剂浓度高于熔体体积。 晶片开始凝固。 掺杂剂在固体半导体中扩散不良。 晶圆开始凝固后，掺杂剂不能进入熔体。 之后，与晶片表面相邻的熔体中的掺杂剂浓度小于晶片开始形成时的浓度。 新的晶片区域从其掺杂浓度随时间减少的熔融区域生长。 这在晶片中建立了掺杂剂梯度，在模具附近具有较高的浓度。 渐变可以定制。 梯度产生可用作漂移或背表面场的场。 太阳能集热器可以在后表面具有开放的栅格导体和更好的光学反射器，这可以通过固有的背面场来实现。

公开(公告)号：WO2012075306A2

公开(公告)日：2012-06-07

申请号：PCT/US2011/062914

申请日：2011-12-01

Applicant: 1366 TECHNOLOGIES INC. ,  JONCZYK, Ralf ,  SACHS, Emanuel, M.

Inventor： JONCZYK, Ralf ,  SACHS, Emanuel, M.

IPC: H01L21/28

CPC classification number: H01L31/182 ,  C04B41/4539 ,  C04B41/5096 ,  C30B11/002 ,  C30B15/00 ,  C30B15/007 ,  C30B15/32 ,  C30B29/06 ,  H01L21/02002 ,  H01L21/02532 ,  H01L31/1804 ,  Y02E10/546 ,  Y02P70/521

Abstract: An interposer sheet can be used for making semiconductor bodies, such as of silicon, such as for solar cell use. It is free-standing, very thin, flexible, porous and able to withstand the chemical and thermal environment of molten semiconductor without degradation. It is typically of a ceramic material, such as silica, silicon nitride, silicon oxynitride, silicon oxycarbide, silicon carbide, silicon carbonitride, silicon oxycarbonitride and others. It is provided between a forming surface of a mold sheet, and the molten material from which a semiconductor body will be formed. It may be secured to the forming surface or deposited upon the melt. The interposer sheet suppresses grain nucleation, and limits heat flow from the melt. It promotes separation of the semiconductor body from the forming surface. It can be fabricated before its use. Because free-standing and not adhered to the forming surface, problems of mismatch of CTE are minimized. The interposer sheet and semiconductor body are free to expand and contract relatively independently of the forming surface.

Abstract translation: 插入片可用于制造诸如硅的半导体本体，例如用于太阳能电池。 它是独立的，非常薄的，柔性的，多孔的并且能够耐受熔融半导体的化学和热环境而不降解。 它通常是陶瓷材料，例如二氧化硅，氮化硅，氮氧化硅，碳氧化硅，碳化硅，碳氮化硅，碳氮氧化硅等。 设置在模板的成形表面和将形成半导体本体的熔融材料之间。 它可以固定到成形表面或沉积在熔体上。 插入片抑制晶粒成核，并限制来自熔体的热流。 它促进半导体主体与成形表面的分离。 它可以在使用之前进行制造。 由于独立且不粘附到成型表面，CTE的失配问题被最小化。 插入片和半导体本体相对于成形表面相对自由地膨胀和收缩。

公开(公告)号：WO2010129884A1

公开(公告)日：2010-11-11

申请号：PCT/US2010/034067

申请日：2010-05-07

Applicant: 1366 TECHNOLOGIES INC. ,  SACHS, Emanuel, M. ,  GABOR, Andrew, M.

Inventor： SACHS, Emanuel, M. ,  GABOR, Andrew, M.

IPC: H01L21/306 ,  H01L31/00 ,  H01L31/18

CPC classification number: H01L31/022425 ,  H01L21/76802 ,  H01L31/02363 ,  H01L31/18 ,  Y02E10/50

Abstract: A porous lift off layer facilitates removal of films from surfaces, such as semiconductors. A film is applied over a patterned porous layer, the layer comprising openings typically larger than the film thickness. The porous material and the film are then removed from areas where film is not intended. The porous layer can be provided as a slurry, dried to open porosities, or fugitive particles within a field, which disassociate upon the application of heat or solvent. The film can be removed by etchant that enters through porosities where the film does not bridge the spaces between solid portions, so that the etchant attacks both film surfaces

Abstract translation: 多孔提升层有助于从诸如半导体的表面去除膜。 将膜施加在图案化的多孔层上，该层包括通常大于膜厚度的开口。 然后将多孔材料和膜从不需要膜的区域中取出。 多孔层可以作为浆料提供，干燥以打开孔隙，或场内的逸散颗粒，其在施加热或溶剂时解离。 可以通过蚀刻剂从薄膜不固定部分之间的空隙的孔隙中进入薄膜，从而使蚀刻剂侵袭两个薄膜表面

公开(公告)号：WO2015167826A1

公开(公告)日：2015-11-05

申请号：PCT/US2015/026389

申请日：2015-04-17

Applicant: 1366 TECHNOLOGIES, INC.

Inventor： SACHS, Emanuel, M. ,  JONCZYK, Ralf ,  LORENZ, Adam, L. ,  WALLACE, Richard, L. ,  HUDELSON, Stephen George, D.

IPC: H01L31/0236

CPC classification number: C30B11/02 ,  C30B29/06 ,  H01L29/0657 ,  H01L31/022441 ,  H01L31/028 ,  H01L31/035281 ,  H01L31/0682 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

Abstract: Semi-conductor wafers with thin and thicker regions at controlled locations may be for Photovoltaics. The interior may be less than 180 microns or thinner, to 50 microns, with a thicker portion, at 180 - 250 microns. Thin wafers have higher efficiency. A thicker perimeter provides handling strength. Thicker stripes, landings and islands are for metallization coupling. Wafers may be made directly from a melt upon a template with regions of different heat extraction propensity arranged to correspond to locations of relative thicknesses. Interstitial oxygen is less than 6 x 10 17 atoms/cc, preferably less than 2 x 10 17 , total oxygen less than 8. 75 x 10 17 atoms/cc, preferably less than 5. 25 x 10 17 . Thicker regions form adjacent template regions having relatively higher heat extraction propensity; thinner regions adjacent regions with lesser extraction propensity. Thicker template regions have higher extraction propensity. Functional materials upon the template also have differing extraction propensities.

Abstract translation: 半导体晶片在受控位置具有较薄和较厚的区域可能适用于光伏发电。 内部可以小于180微米或更薄，至50微米，较厚部分为180-250微米。 薄晶圆具有更高的效率。 较厚的周长提供处理强度。 较厚的条纹，着陆和岛屿用于金属化耦合。 晶片可以直接从熔体制成模板，其中不同热提取倾向的区域布置成对应于相对厚度的位置。 间隙氧小于6×1017原子/立方厘米，优选小于2×1017，小于8.75×10 17原子/立方厘米，优选小于5.25×1017的总氧。较大的区域形成相对较高的相邻模板区域 热提取倾向; 较薄的区域具有较小的提取倾向。 较厚的模板区域具有较高的提取倾向。 模板上的功能材料也具有不同的提取倾向。

公开(公告)号：WO2013056059A2

公开(公告)日：2013-04-18

申请号：PCT/US2012/059967

申请日：2012-10-12

Applicant: 1366 TECHNOLOGIES INC.

Inventor： DANNER, Guy, M. ,  GATES, Holly, G. ,  TARASOV, Vladimir, S. ,  KANE, Peter, E. ,  MADDEN, Peter, G. ,  SACHS, Emanuel, M.

IPC: B05D1/06

CPC classification number: B05B5/001 ,  B05B5/005 ,  B05B5/087 ,  B05B7/0012 ,  B05B12/16 ,  B05B13/02 ,  B05D1/04 ,  B05D1/06 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002 ,  H01L21/67109 ,  H01L21/67115 ,  H01L21/6715 ,  H01L21/6776

Abstract: The present inventions relate to the formation of a thin polymer film on a substrate. Apparatus is described for transforming a solid polymer resist into an aerosol of small particles, electrostatically charging and depositing the particles onto a substrate, and flowing the particles into a continuous layer. Apparatus is further described for transforming solid resist into an aerosol of small particles by heating the resist to form a low viscosity liquid such as is compatible with nebulization and applying the techniques of jet or impact nebulization and aerosol particle sizing to form the aerosol. A method is further described of using ionized gas to confer charge onto the aerosol particles and using a progression of charging devices establish an electric field directing the flow of charged particles to the substrate. The progression of charging devices and associated apparatus results in high collection efficiency for the aerosol particles.

Abstract translation: 本发明涉及在基材上形成薄聚合物膜。 描述了用于将固体聚合物抗蚀剂转化成小颗粒气溶胶的装置，将颗粒静电充电并沉积到基底上，并将颗粒流入连续层。 进一步描述了将固体抗蚀剂转化为小颗粒气溶胶的装置，通过加热抗蚀剂以形成与雾化相容的低粘度液体，并应用喷射或冲击雾化和气溶胶颗粒尺寸的技术以形成气溶胶。 进一步描述了使用电离气体将电荷赋予气溶胶颗粒的方法，并且使用充电装置的进展建立了将带电粒子流引导到基底的电场。 充电装置和相关设备的进展导致气溶胶颗粒的高收集效率。

公开(公告)号：WO2010104838A1

公开(公告)日：2010-09-16

申请号：PCT/US2010/026639

申请日：2010-03-09

Applicant: 1366 TECHNOLOGIES INC. ,  SACHS, Emanuel, M. ,  WALLACE, Richard, L. ,  HANTSOO, Eerik, T. ,  LORENZ, Adam, M. ,  HUDELSON, G. D., Stephen ,  JONCZYK, Ralf

Inventor： SACHS, Emanuel, M. ,  WALLACE, Richard, L. ,  HANTSOO, Eerik, T. ,  LORENZ, Adam, M. ,  HUDELSON, G. D., Stephen ,  JONCZYK, Ralf

IPC: C30B15/00 ,  C03B19/02

CPC classification number: B29C33/44 ,  C30B11/007 ,  C30B15/30 ,  C30B19/068 ,  C30B28/04 ,  C30B29/06

Abstract: A pressure differential is applied across a mold sheet and a semiconductor (e.g. silicon) wafer is formed thereon. Relaxation of the pressure differential allows release of the wafer. The mold sheet may be cooler than the melt. Heat is extracted almost exclusively through the thickness of the forming wafer. The liquid and solid interface is substantially parallel to the mold sheet. The temperature of the solidifying body is substantially uniform across its width, resulting in low stresses and dislocation density and higher crystallographic quality. The mold sheet must allow flow of gas through it. The melt can be introduced to the sheet by: full area contact with the top of a melt; traversing a partial area contact of melt with the mold sheet, whether horizontal or vertical, or in between; and by dipping the mold into a melt. The grain size can be controlled by many means.

Abstract translation: 在模板上施加压差，并在其上形成半导体（例如硅）晶片。 压差的放松允许晶片的释放。 模具片可以比熔体更冷。 几乎完全通过成形晶片的厚度提取热量。 液体和固体界面基本上平行于模片。 凝固体的温度在其宽度上基本均匀，导致低应力和位错密度和更高的晶体学质量。 模板必须允许气体流过它。 可以通过以下方式将熔体引入片材：与熔体的顶部完全区域接触; 穿过熔体与模板的部分区域接触，无论是水平还是垂直的，或者在其间; 并将模具浸入熔体中。 可以通过许多方法控制晶粒尺寸。

公开(公告)号：WO2013103930A2

公开(公告)日：2013-07-11

申请号：PCT/US2013/020435

申请日：2013-01-06

Applicant: 1366 TECHNOLOGIES, INC.

Inventor： TARASOV, Vladimir ,  ERSEN, Ali ,  STERN, Eric ,  CRISCIONE, Jason, M. ,  SACHS, Emanuel, M.

IPC: H01L21/3063

CPC classification number: H01L31/02363 ,  H01L31/0248 ,  Y02E10/50

Abstract: Processes increase light absorption into silicon wafers by selectively changing the reflective properties of the bottom portions of light trapping cavity features. Modification of light trapping features includes: deepening the bottom portion, increasing the curvature of the bottom portion, and roughening the bottom portion, all accomplished through etching. Modification may also be by the selective addition of material at the bottom of cavity features. Different types of features in the same wafers may be treated differently. Some may receive a treatment that improves light trapping while another is deliberately excluded from such treatment. Some may be deepened, some roughened, some both. No alignment is needed to achieve this selectively. The masking step achieves self-alignment to previously created light trapping features due to softening and deformation in place.

Abstract translation: 通过选择性地改变光阱特征的底部的反射特性，工艺增加了对硅晶片的光吸收。 光捕获特征的改进包括：深化底部部分，增加底部部分的曲率，以及粗糙化底部部分，全部通过蚀刻来实现。 修改也可以通过在腔体特征的底部选择性地添加材料。 不同类型的相同晶片中的特征可以被不同地对待。 有些可能会接受改善光线捕获的治疗方法，而另一种方法被故意排除在这种治疗之外。 有些可能会加深，有些粗糙，有的两个。 不需要对准以选择性地实现。 掩蔽步骤由于在现场的软化和变形而实现了先前产生的光捕获特征的自对准。