公开(公告)号：JP2003197861A

公开(公告)日：2003-07-11

申请号：JP2002350739

申请日：2002-12-03

Applicant: ABB RESEARCH LTD

Inventor： BIJLENGA BO ,  ZWICK FABIAN ,  HAMIDI AMINA ,  MEYSENC LUC ,  KAUFMANN STEFAN ,  ERNE PATRICK

IPC: H01L23/48 ,  H01L25/07 ,  H01L25/18

Abstract: PROBLEM TO BE SOLVED: To provide a power semiconductor submodule and power semiconductor module which have higher blocking voltages and are substantially equal in physical height to each other. SOLUTION: The power semiconductor module (1) has at least two semiconductor chips (21, 22), which have two main electrodes 3 and 4 between two main connection parts (6, 7) and also have one main electrode (3) applied with a contact force by a contact die (8) to press the other electrode (4) against a base plate (5). Those two semiconductor chips (21, 22) are electrically connected in series between two main connection parts (6, 7) of the power semiconductor submodule. COPYRIGHT: (C)2003,JPO