公开(公告)号：US20190177346A1

公开(公告)日：2019-06-13

申请号：US16308900

申请日：2017-05-15

Applicant: ADEKA CORPORATION

Inventor： Makoto OKABE ,  Akihiro NISHIDA ,  Tomoharu YOSHINO

IPC: C07F9/00 ,  C23C16/455 ,  C23C16/18 ,  C23C16/34

Abstract: A vanadium compound represented by following General Formula (1). In General Formula (1), R1 represents a linear or branched alkyl group having 1 to 7 carbon atoms and n represents a number from 2 to 4. R1 preferably represents a secondary alkyl or a tertiary alkyl. It is preferred that in General Formula (1), n is 2 and R1 is tert-butyl group or tert-pentyl group, since the compound has a broad ALD window and high thermal decomposition temperature to be able to form a good quality vanadium-containing thin film that has a small carbon residue when used as an ALD material.

公开(公告)号：US20180037540A1

公开(公告)日：2018-02-08

申请号：US15555215

申请日：2016-02-12

Applicant: ADEKA CORPORATION

Inventor： Tomoharu YOSHINO ,  Masaki ENZU ,  Akihiro NISHIDA ,  Nana SUGIURA ,  Atsushi SAKURAI ,  Makoto OKABE

IPC: C07C251/08 ,  C23C16/455 ,  C23C16/18

CPC classification number: C07C251/08 ,  C07F15/065 ,  C23C16/18 ,  C23C16/45553 ,  C23C16/45555

Abstract: A diazadienyl compound represented by General Formula (I) below: wherein R1 and R2 each independently represent a C1-6 linear or branched alkyl group, R3 represents hydrogen, or a C1-6 linear or branched alkyl group, M represents a metal atom or a silicon atom, and n represents a valence of the metal atom or silicon atom represented by M.

公开(公告)号：US20170044188A1

公开(公告)日：2017-02-16

申请号：US15306812

申请日：2015-04-08

Applicant: ADEKA CORPORATION

Inventor： Tomoharu YOSHINO ,  Masaki ENZU ,  Atsushi SAKURAI ,  Akihiro NISHIDA ,  Makoto OKABE

IPC: C07F1/08 ,  C23C16/455 ,  C23C16/06 ,  C09D5/24 ,  C09D1/00

CPC classification number: C07F1/08 ,  C07C215/08 ,  C09D1/00 ,  C09D5/24 ,  C23C16/06 ,  C23C16/18 ,  C23C16/45525 ,  C23C16/45542 ,  C23C16/45553 ,  H01L21/28 ,  H01L21/285

Abstract: This invention provides a copper compound represented by General Formula (I) below. In General Formula (I), R1 to R3 independently represent a linear or branched alkyl group with a carbon number of 1 to 5; provided that R1 and R2 are a methyl group, R3 represents a linear or branched alkyl group with a carbon number of 2 to 5; and provided that R1 is a methyl group and R2 is an ethyl group, R3 represents a methyl group or a linear or branched alkyl group with a carbon number of 3 to 5. A starting material for forming a thin film of the present invention includes the copper compound represented by General Formula (I). The present invention can provide a copper compound which has a low melting point, can be conveyed in a liquid state, has a high vapor pressure, and is easily vaporizable, and also a starting material for forming a thin film which uses such a copper compound.

Abstract translation: 该铜化合物由通式（I）表示。 在通式（I）中，R 1 -R 3各自独立地表示具有1-5个碳原子的直链或支链烷基，条件是在R 1和R 2为甲基的情况下，R 3表示直链或支链烷基， 2-5个碳原子，在R1为甲基，R2为乙基的情况下，R3表示甲基或碳原子数为3〜5的直链或支链烷基。 根据本发明的用于形成薄膜的起始材料包含由通式（I）表示的铜化合物。 本发明能够提供一种铜化合物，其具有低熔点并且可以以液态运输，并且具有高蒸气压并易于蒸发; 以及使用该铜化合物的用于形成薄膜的原料。