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    METHOD FOR PRODUCING YTTRIUM OXIDE-CONTAINING FILM
    1.
    发明申请
    METHOD FOR PRODUCING YTTRIUM OXIDE-CONTAINING FILM 有权

    公开(公告)号：US20220364226A1

    公开(公告)日：2022-11-17

    申请号：US17765658

    申请日：2020-09-24

    Applicant: ADEKA CORPORATION

    Inventor： Akihiro NISHIDA ,  Atsushi YAMASHITA

    IPC: C23C16/40

    Abstract: The present invention provides a method for producing an yttrium oxide-containing film by an atomic layer deposition method, including: a step (A) of introducing a raw material gas obtained by vaporizing a thin film-forming raw material containing tris(sec-butylcyclopentadienyl)yttrium into a processing atmosphere to deposit the tris(sec-butylcyclopentadienyl)yttrium on a substrate; and a step (B) of reacting the tris(sec-butylcyclopentadienyl)yttrium deposited on the substrate with a reactive gas containing a gas selected from the group consisting of oxygen plasma, ozone, ozone plasma, and mixtures thereof in the processing atmosphere to oxidize yttrium.

    METHOD OF PRODUCING THIN-FILM
    3.
    发明公开
    METHOD OF PRODUCING THIN-FILM 审中-公开

    公开(公告)号：US20240018655A1

    公开(公告)日：2024-01-18

    申请号：US18037206

    申请日：2021-11-16

    Applicant: ADEKA CORPORATION

    Inventor： Akihiro NISHIDA ,  Masako HATASE ,  Tomoharu YOSHINO ,  Yoshiki OOE ,  Chiaki MITSUI

    IPC: C23C16/455 ,  C07F7/00 ,  C01G27/02 ,  C23C16/40

    CPC classification number: C23C16/45553 ,  C07F7/003 ,  C01G27/02 ,  C23C16/45527 ,  C23C16/405 ,  H01L21/02181

    Abstract: Provided is a method of producing a thin-film containing a hafnium atom on a surface of a substrate by an atomic layer deposition method, including: a step 1 of causing a raw material gas obtained by vaporizing a thin-film forming raw material containing a hafnium compound represented by the following general formula (1) to adsorb to the surface of the substrate to form a precursor thin-film; a step 2 of evacuating the raw material gas remaining unreacted; and a step 3 of causing the precursor thin-film to react with a reactive gas at a temperature of 300° C. or more and less than 450° C. to form the thin-film containing a hafnium atom on the surface of the substrate:






    wherein R1 and R2 each independently represent a hydrogen atom or an alkyl group having 1 to 3 carbon atoms, and R3 and R4 each independently represent an alkyl group having 1 to 3 carbon atoms.

    METHOD OF PRODUCING COPPER-CONTAINING LAYER
    6.
    发明申请
    METHOD OF PRODUCING COPPER-CONTAINING LAYER 有权

    公开(公告)号：US20230041933A1

    公开(公告)日：2023-02-09

    申请号：US17782403

    申请日：2020-12-01

    Applicant: ADEKA CORPORATION

    Inventor： Akihiro NISHIDA ,  Atsushi YAMASHITA

    IPC: C23C16/18 ,  C07F1/08 ,  C09D1/00 ,  C23C16/455

    Abstract: Provided is a method of producing a copper-containing layer, including: step 1: a step of reducing a surface of a substrate, provided that a substrate having a surface formed of a silicic acid compound is excluded, through use of a reducing agent; and step 2: a step of forming a copper-containing layer on the surface having been reduced in the step 1 through use of a thin-film forming raw material containing a copper compound by a plasma atomic layer deposition method.

    COPPER COMPOUND, STARTING MATERIAL FOR FORMING THIN FILM, AND METHOD FOR MANUFACTURING THIN FILM
    8.
    发明申请
    COPPER COMPOUND, STARTING MATERIAL FOR FORMING THIN FILM, AND METHOD FOR MANUFACTURING THIN FILM 有权
    铜复合材料，用于形成薄膜的起始材料以及制造薄膜的方法

    公开(公告)号：US20170044188A1

    公开(公告)日：2017-02-16

    申请号：US15306812

    申请日：2015-04-08

    Applicant: ADEKA CORPORATION

    Inventor： Tomoharu YOSHINO ,  Masaki ENZU ,  Atsushi SAKURAI ,  Akihiro NISHIDA ,  Makoto OKABE

    IPC: C07F1/08 ,  C23C16/455 ,  C23C16/06 ,  C09D5/24 ,  C09D1/00

    CPC classification number: C07F1/08 ,  C07C215/08 ,  C09D1/00 ,  C09D5/24 ,  C23C16/06 ,  C23C16/18 ,  C23C16/45525 ,  C23C16/45542 ,  C23C16/45553 ,  H01L21/28 ,  H01L21/285

    Abstract: This invention provides a copper compound represented by General Formula (I) below. In General Formula (I), R1 to R3 independently represent a linear or branched alkyl group with a carbon number of 1 to 5; provided that R1 and R2 are a methyl group, R3 represents a linear or branched alkyl group with a carbon number of 2 to 5; and provided that R1 is a methyl group and R2 is an ethyl group, R3 represents a methyl group or a linear or branched alkyl group with a carbon number of 3 to 5. A starting material for forming a thin film of the present invention includes the copper compound represented by General Formula (I). The present invention can provide a copper compound which has a low melting point, can be conveyed in a liquid state, has a high vapor pressure, and is easily vaporizable, and also a starting material for forming a thin film which uses such a copper compound.

    Abstract translation: 该铜化合物由通式（I）表示。 在通式（I）中，R 1 -R 3各自独立地表示具有1-5个碳原子的直链或支链烷基，条件是在R 1和R 2为甲基的情况下，R 3表示直链或支链烷基， 2-5个碳原子，在R1为甲基，R2为乙基的情况下，R3表示甲基或碳原子数为3〜5的直链或支链烷基。 根据本发明的用于形成薄膜的起始材料包含由通式（I）表示的铜化合物。 本发明能够提供一种铜化合物，其具有低熔点并且可以以液态运输，并且具有高蒸气压并易于蒸发; 以及使用该铜化合物的用于形成薄膜的原料。

    METHOD OF PRODUCING THIN-FILM
    10.
    发明公开
    METHOD OF PRODUCING THIN-FILM 审中-公开

    公开(公告)号：US20240018654A1

    公开(公告)日：2024-01-18

    申请号：US18036975

    申请日：2021-11-16

    Applicant: ADEKA CORPORATION

    Inventor： Akihiro NISHIDA ,  Masako HATASE ,  Tomoharu YOSHINO ,  Yoshiki OOE ,  Chiaki MITSUI

    IPC: C23C16/455 ,  C23C16/40

    CPC classification number: C23C16/45553 ,  C23C16/405

    Abstract: Provided is a method of producing a thin-film containing a zirconium atom on a surface of a substrate by an atomic layer deposition method, including: a step 1 of causing a raw material gas obtained by vaporizing a thin-film forming raw material containing a zirconium compound represented by the following general formula (1) to adsorb to the surface of the substrate to form a precursor thin-film; a step 2 of evacuating the raw material gas remaining unreacted; and a step 3 of causing the precursor thin-film to react with a reactive gas at a temperature of 240° C. or more and 450° C. or less to form the thin-film containing a zirconium atom on the surface of the substrate:




    wherein R1 and R2 each independently represent a hydrogen atom or an alkyl group having 1 to 3 carbon atoms, and R3 and R4 each independently represent an alkyl group having 1 to 3 carbon atoms, provided that a zirconium compound in which both of R1 and R2 represent hydrogen atoms is excluded.

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