公开(公告)号：WO2003001601A2

公开(公告)日：2003-01-03

申请号：PCT/US2001/048825

申请日：2001-12-14

Applicant: ADVANCED MICRO DEVICES, INC.

Inventor： RAMSBEY, Mark, T. ,  DERHACOBIAN, Narbeh ,  WANG, Janet ,  HUI, Angela ,  PHAM, Tuan ,  SUNKAVALLI, Ravi ,  RANDOLPH, Mark

IPC: H01L27/115

CPC classification number: H01L27/11568 ,  H01L27/105 ,  H01L27/11573

Abstract: One aspect of the present invention relates to a method of forming spacers (56) in a SONOS type nonvolatile semiconductor memory device, involving providing a substrate (40) having a core region (42) and periphery region (44), the core region (42) containing SONOS type memory cells (48) and the periphery region (44) containing gate transistors (50); implanting a first implant into the core region (42) and a first implant into the perifery region (44) of the substrate (40); forming a spacer material (52) over the substrate (40); masking the core region (42) and forming spacers (56) adjacent the gate transistors (50) in the perifery region (44); and implanting a second implant into the perifery region (44) of the substrate (40).

Abstract translation: 本发明的一个方面涉及一种在SONOS型非易失性半导体存储器件中形成间隔物（56）的方法，包括提供具有芯区（42）和周边区（44）的基底（40），芯区（ 42），包含SONOS型存储单元（48）和包含栅极晶体管（50）的外围区域（44）; 将第一植入物植入所述芯区域（42）中并将第一植入物植入所述基底（40）的所述外围区域（44）中; 在衬底（40）上形成间隔物（52）; 掩蔽所述芯区域（42）并在所述外形区域（44）中形成与所述栅极晶体管（50）相邻的间隔物（56）。 以及将第二植入物植入到所述基底（40）的外围区域（44）中。