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    NANOPOROUS LOW-K FILMS WITH INFILTRATED POROSITY
    3.
    发明申请
    NANOPOROUS LOW-K FILMS WITH INFILTRATED POROSITY 审中-公开
    具有渗透孔隙度的纳米低K膜

    公开(公告)号：WO2007047822A3

    公开(公告)日：2009-05-07

    申请号：PCT/US2006040848

    申请日：2006-10-18

    Applicant: ADVANCED TECH MATERIALS ,  VESYCK DANIEL J ,  BILODEAU STEVEN M ,  XU CHONGYING ,  CHEN PHILIP S H ,  ROEDER JEFFREY F

    Inventor： VESYCK DANIEL J ,  BILODEAU STEVEN M ,  XU CHONGYING ,  CHEN PHILIP S H ,  ROEDER JEFFREY F

    IPC: C08J9/26 ,  C08J9/28 ,  H01L21/00 ,  H01L21/02

    CPC classification number: C23C16/56 ,  B82Y30/00 ,  C23C16/30

    Abstract: A reinforced porous dielectric material having porosity including pores at least partially closed by an infilled material. The material in one application includes a siloxane such as octamethylcyclotetrasiloxane (OMCTS), tetramethylcyclotetrasiloxane (TMCTS), or CH3(EtO2)SiCHCH2O (DEOMORS), which is infiltrated with a hydrocarbon, such as propylene, ethylene, dimethylsilane or divinyldimethylsilane, and thereafter subjected to conditions for immobilizing the infiltrated material, for reinforcement and enhanced strength and mechanical integrity of the dielectric material. By appropriate choice of infiltrating conditions, the porosity of the dielectric material can be partially filled at the neck regions of the pores, to form closed pore structure having voids that reduce the dielectric constant of the overall material. In a specific application, the infilled material is a ring compound that is self- cross-linked and/or reactively bonded to the wall surface of the dielectric material porosity.

    Abstract translation: 一种具有孔隙率的增强的多孔电介质材料，包括至少部分由填充材料封闭的孔。 一种应用中的材料包括诸如丙烯，乙烯，二甲基硅烷或二乙烯基二甲基硅烷等烃类渗透的诸如八甲基环四硅氧烷（OMCTS），四甲基环四硅氧烷（TMCTS）或CH 3（EtO 2）SiCHCH 2 O（DEOMORS）的硅氧烷， 用于固定渗透材料的条件，用于增强和提高电介质材料的强度和机械完整性。 通过适当选择渗透条件，电介质材料的孔隙率可以部分地填充在孔的颈部区域，以形成具有减小整个材料的介电常数的空隙的闭孔结构。 在具体应用中，填充材料是与电介质材料孔隙率的壁表面自交联和/或反应性结合的环化合物。

    Liquid delivery system, heater apparatus for liquid delivery system, and vaporizer
    4.
    发明专利
    Liquid delivery system, heater apparatus for liquid delivery system, and vaporizer 未知

    公开(公告)号：AU8073498A

    公开(公告)日：1999-01-04

    申请号：AU8073498

    申请日：1998-06-17

    Applicant: ADVANCED TECH MATERIALS

    Inventor： BUSKIRK PETER C VAN ,  BILODEAU STEVEN M ,  CARL RALPH J JR

    IPC: C23C16/448 ,  H01L21/31 ,  C23C16/00 ,  H05B3/00 ,  H05B3/40

    Abstract: A liquid delivery system for delivery of an initially liquid reagent in vaporized form to a chemical vapor deposition reactor arranged in vapor-receiving relationship to the liquid delivery system. The liquid delivery system includes: (a) an elongate vaporization fluid flow passage defining a longitudinal axis and bounded by an enclosing wall to define a cross-section of the fluid flow passage transverse to the longitudinal axis; (b) a vaporization element contained within the fluid flow passage transverse to the longitudinal axis; a source reagent liquid feed passage having a terminus arranged to discharge liquid in a direction perpendicular to a facing surface of the vaporization element; (d) a heating means for heating the vaporization element to a temperature for vaporization of the liquid reagent; and (e) a manifold for flowing vapor formed by vaporization of the liquid reagent on the vaporization element from the fluid flow passage to the chemical vapor deposition reactor, in which the manifold including a diverting means to prevent non-volatile residue from flowing to the chemical vapor deposition reactor. A heater assembly may be employed for heating a component of the liquid delivery system, and the system may utilize a replaceable vaporizer cap removably engageable with the vaporization chamber.

    SYSTEMS AND METHODS FOR DETERMINATION OF ENDPOINT OF CHAMBER CLEANING PROCESSES
    6.
    发明申请
    SYSTEMS AND METHODS FOR DETERMINATION OF ENDPOINT OF CHAMBER CLEANING PROCESSES 审中-公开
    用于确定室清洁工艺端点的系统和方法

    公开(公告)号：WO2007041454A3

    公开(公告)日：2009-05-22

    申请号：PCT/US2006038358

    申请日：2006-10-03

    Applicant: ADVANCED TECH MATERIALS ,  CHEN ING-SHIN ,  NEUNER JEFFREY W ,  ROEDER JEFFREY F ,  BILODEAU STEVEN M ,  HENDRIX BRYAN C ,  CHEN PHILIP S H

    Inventor： CHEN ING-SHIN ,  NEUNER JEFFREY W ,  ROEDER JEFFREY F ,  BILODEAU STEVEN M ,  HENDRIX BRYAN C ,  CHEN PHILIP S H

    IPC: H01L21/00 ,  C23C14/00 ,  C23C16/00

    CPC classification number: H01L21/67253 ,  C23C16/4405 ,  C23C16/52 ,  H01J37/32862 ,  H01J37/32935 ,  H01J37/32963 ,  H01L21/67069

    Abstract: Apparatus and method for determination of the endpoint of a cleaning process in which cleaning fluid is contacted with a structure to effect cleaning thereof. The cleaning process includes contacting a cleaning fluid with a structure to be cleaned and producing a cleaning effluent having a sensible heat thermal energy characteristic corresponding to extent of cleaning of the structure, disposing an object in the cleaning effluent that interacts with the cleaning effluent to produce a response indicative of the sensible heat thermal energy characteristic of the cleaning effluent, and monitoring such response to determine when the cleaning is completed. An endpointing algorithm and endpoint monitoring are also described, as well as endpoint monitor sensor elements that are useful to determine endpoint conditions in an efficient and reproduceable manner.

    Abstract translation: 用于确定清洁过程的终点的装置和方法，其中清洁流体与结构接触以进行清洁。 清洁过程包括使清洁流体与待清洁的结构接触并产生具有对应于结构清洁程度的显热热能特征的清洁流出物，将清洁物品放置在与清洁流出物相互作用的清洁流出物中以产生 指示清洁流出物的显热热能特征的响应，以及监测这种响应以确定何时完成清洁。 还描述了端点算法和端点监视，以及端点监视器传感器元件，其有效地以有效和可再现的方式确定端点条件。

    HIGH-K PEROVSKITE MATERIAL AND METHODS OF MAKING AND USING THE SAME
    8.
    发明申请
    HIGH-K PEROVSKITE MATERIAL AND METHODS OF MAKING AND USING THE SAME 审中-公开
    高K薄膜材料及其制造方法和使用方法

    公开(公告)号：WO2012177642A2

    公开(公告)日：2012-12-27

    申请号：PCT/US2012043153

    申请日：2012-06-19

    Applicant: ADVANCED TECH MATERIALS ,  HENDRIX BRYAN C ,  BILODEAU STEVEN M ,  CHEN ING-SHIN BARRY ,  ROEDER JEFFREY F ,  STAUF GREGORY T

    Inventor： HENDRIX BRYAN C ,  BILODEAU STEVEN M ,  CHEN ING-SHIN BARRY ,  ROEDER JEFFREY F ,  STAUF GREGORY T

    IPC: H01L21/31 ,  H01L21/205

    CPC classification number: H01L28/55 ,  C23C16/409 ,  C23C16/45531 ,  H01L21/02197 ,  H01L21/0228 ,  H01L27/108

    Abstract: High-k materials and devices, e.g., DRAM capacitors, and methods of making and using the same. Various methods of forming perovskite films are described, including methods in which perovskite material is deposited on the substrate by a pulsed vapor deposition process involving contacting of the substrate with perovskite material-forming metal precursors. In one such method, the process is carried out with doping or alloying of the perovskite material with a higher mobility and/or higher volatility metal species than the metal species in the perovskite material- forming metal precursors. In another method, the perovskite material is exposed to elevated temperature for sufficient time to crystallize or to enhance crystallization of the perovskite material, followed by growth of the perovskite material under pulsed vapor deposition conditions. Various perovskite compositions are described, including: (Sr, Pb)TiO3; SrRuO3 or SrTiO3, doped with Zn, Cd or Hg; Sr(Sn,Ru)O3; and Sr(Sn,Ti)O3.

    Abstract translation: 高k材料和器件，例如DRAM电容器，以及制造和使用它们的方法。 描述了形成钙钛矿薄膜的各种方法，包括其中通过脉冲气相沉积工艺将钙钛矿材料沉积在基底上的方法，包括使基底与形成钙钛矿的金属前体接触。 在一种这样的方法中，该方法通过钙钛矿材料的掺杂或合金化与在形成钙钛矿材料的金属前体中的金属物质具有更高的迁移率和/或更高的挥发性金属物质进行。 在另一种方法中，将钙钛矿材料暴露于升高的温度足够的时间以结晶或增强钙钛矿材料的结晶，随后在脉冲气相沉积条件下生长钙钛矿材料。 描述了各种钙钛矿组合物，包括：（Sr，Pb）TiO 3; SrRuO3或SrTiO3，掺杂Zn，Cd或Hg; SR（锡，钌）O3; 和Sr（Sn，Ti）O 3。

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