APPARATUS AND METHOD FOR PREPARATION OF COMPOUNDS OR INTERMEDIATES THEREOF FROM A SOLID MATERIAL, AND USING SUCH COMPOUNDS AND INTERMEDIATES
    1.
    发明申请
    APPARATUS AND METHOD FOR PREPARATION OF COMPOUNDS OR INTERMEDIATES THEREOF FROM A SOLID MATERIAL, AND USING SUCH COMPOUNDS AND INTERMEDIATES 审中-公开
    从固体材料中制备化合物或其中间体的装置和方法,以及使用这些化合物和中间体

    公开(公告)号:WO2012030679A3

    公开(公告)日:2012-07-05

    申请号:PCT/US2011049473

    申请日:2011-08-28

    Abstract: An apparatus is described, as including a reaction region for contacting a reactant gas with a reactive solid under conditions effective to form an intermediate product, and an opening for allowing an unreacted portion of the gaseous reagent and the intermediate product to exit the reaction region. The apparatus can be beneficially employed to form a final product as a reaction product of the intermediate product and the reactant gas. The reaction of the reactant gas and reactive solid can be conducted in a first reaction zone, with the reaction of the reactant gas and intermediate product conducted in a second reaction zone. In a specific implementation, the reaction of the reactant gas and intermediate product is reversible, and the reactant gas and intermediate product are flowed to the second reaction zone at a controlled rate or in a controlled manner, to suppress back reaction forming the reactive solid.

    Abstract translation: 描述了一种装置,其包括用于在有效形成中间产物的条件下使反应气体与反应性固体接触的反应区域,以及允许气态试剂和中间产物的未反应部分离开反应区域的开口。 该设备可以有利地用于形成作为中间产物和反应气体的反应产物的最终产物。 反应气体和反应性固体的反应可以在第一反应区进行,反应气体和中间产物的反应在第二反应区中进行。 在具体实施方案中,反应气体和中间产物的反应是可逆的,并且反应物气体和中间产物以受控的速率或受控的方式流到第二反应区,以抑制形成反应性固体的反应。

    APPARATUS AND PROCESS FOR INTEGRATED GAS BLENDING
    2.
    发明申请
    APPARATUS AND PROCESS FOR INTEGRATED GAS BLENDING 审中-公开
    用于集成气体混合的装置和过程

    公开(公告)号:WO2007002288A2

    公开(公告)日:2007-01-04

    申请号:PCT/US2006024308

    申请日:2006-06-22

    Abstract: A system (10) for delivery of dilute fluid, utilizing an active fluid source (12), a diluent fluid source (14), a fluid flow metering device (24) for dispensing of one of the active and diluent fluids, a mixer (28) arranged to mix the active and diluent fluids to form a diluted active fluid mixture, and a monitor (42) arranged to sense concentration of active fluid and/or diluent fluid in the diluted active fluid mixture, and responsively adjust the fluid flow metering device (24) to achieve a predetermined concentration of active fluid in the diluted active fluid mixture. A pressure controller (38) is arranged to control flow of the other of the active and diluent fluids so as to maintain a predetermined pressure of the diluted active fluid mixture dispensed from the system. The fluid dispensed from the system then can be adjustably controlled by a flow rate controller, e.g., a mass flow controller, to provide a desired flow to a fluid-utilizing unit, such as a semiconductor process tool. An end point monitoring assembly is also described, for switching fluid sources (12, 15) to maintain continuity of delivery of the diluted active fluid mixture.

    Abstract translation: 利用活性流体源(12),稀释剂流体源(14),用于分配活性流体和稀释流体之一的流体流量计量装置(24),用于输送稀释流体的系统(10),混合器 28),其布置成混合活性流体和稀释剂流体以形成稀释的活性流体混合物;以及监测器(42),其被布置为感测稀释的活性流体混合物中的活性流体和/或稀释剂流体的浓度,并且响应地调整流体流量计量 装置(24)以实现稀释的活性流体混合物中的预定浓度的活性流体。 压力控制器(38)布置成控制另一活性流体和稀释流体的流量,以维持从系统分配的稀释的活性流体混合物的预定压力。 然后可以通过流量控制器(例如质量流量控制器)可调节地控制从系统分配的流体,以向流体利用单元(例如半导体处理工具)提供期望的流量。 还描述了一种终点监测组件,用于切换流体源(12,15)以保持稀释的活性流体混合物的输送的连续性。

    APPARATUS AND METHOD FOR USE OF INDIUM CHLORIDE TO DELIVER INDIUM VAPOR TO ION SOURCE
    6.
    发明申请
    APPARATUS AND METHOD FOR USE OF INDIUM CHLORIDE TO DELIVER INDIUM VAPOR TO ION SOURCE 审中-公开
    使用氯化镉将离子源蒸发的装置和方法

    公开(公告)号:WO2007085008A3

    公开(公告)日:2008-01-03

    申请号:PCT/US2007060810

    申请日:2007-01-20

    Abstract: An ion implantation system (100) including an ion source adapted to ionize a precursor vapor to form ions for implantation in a substrate (30), a material storage and dispensing apparatus including a vessel (102) adapted to hold precursor, and a dispensing assembly (104, 108) coupled to the vessel for dispensing precursor from the vessel. The dispensing assembly is coupled with the ion source (10), and a heater (106) is adapted for heating of the precursor in the vessel so that precursor dispensed from said apparatus to the ion source is maintained in a vapor phase for implantation of ions derived therefrom. Such system is adaptable for delivery of indium monochloride, e.g., from a portable material storage and dispensing apparatus, without the necessity of a vaporizer integrated into the housing of the ion source, and without the handling and processing issues attendant the use of indium trichloride.

    Abstract translation: 一种离子注入系统(100),其包括适于电离前体蒸汽以形成用于注入衬底(30)的离子的离子源,包括适于保持前体的容器(102)的材料储存和分配设备,以及分配组件 (104,108),其耦合到所述容器以从所述容器分配前体。 分配组件与离子源(10)耦合,并且加热器(106)适于加热容器中的前体,使得从所述装置分配到离子源的前体保持在用于注入离子的气相 从其衍生。 这种系统适用于例如从便携式材料储存和分配装置输送一氯化铟,而不需要将蒸发器整合到离子源的壳体中,并且不需要与三氯化铟的使用有关的处理和处理问题。

    CHEMISORBENT SYSTEM FOR ABATEMENT OF EFFLUENT SPECIES
    7.
    发明申请
    CHEMISORBENT SYSTEM FOR ABATEMENT OF EFFLUENT SPECIES 审中-公开
    化学物质吸收系统

    公开(公告)号:WO2005025733A3

    公开(公告)日:2005-10-20

    申请号:PCT/US2004029382

    申请日:2004-09-10

    CPC classification number: B01D53/685 B01D2258/0216

    Abstract: A dry scrubbing system for treatment of effluent from an upstream effluent-generating process. The dry scrubbing system accommodates operation in a process window involving substantial variation in process conditions, e.g., flow rate and/or concentration, of scrubbable gas species in the effluent. Multiple scrubbing media are utilized in the dry scrubbing system, each optimal in a regime of the operating window, and together ensuring at least a predetermined level of removal of scrubbable gas species over the entire operating window. In a specific aspect, gaseous phosphorus in the effluent is abated by use of potassium hydroxide as an active abatement agent.

    Abstract translation: 一种干洗系统,用于处理上游流出物生成过程的污水。 干洗系统适应在工艺窗口中的操作,其涉及流出物中可洗涤气体种类的工艺条件(例如流速和/或浓度)的显着变化。 在干洗系统中使用多个洗涤介质,每个洗涤系统在操作窗口的状态下都是最佳的,并且一起确保在整个操作窗口上至少预定水平的可擦除气体物质的去除。 在具体方面,通过使用氢氧化钾作为活性消除剂来减少流出物中的气态磷。

    COLORIMETRIC GAS DETECTOR AND WINDOWED PROCESS CHAMBER
    8.
    发明申请
    COLORIMETRIC GAS DETECTOR AND WINDOWED PROCESS CHAMBER 审中-公开
    彩色气体检测器和窗户过程室

    公开(公告)号:WO2005019797A3

    公开(公告)日:2005-09-22

    申请号:PCT/US2004025339

    申请日:2004-08-05

    CPC classification number: G01N21/783

    Abstract: A windowed chamber, e.g., a semiconductor manufacturing process chamber such as a scrubber, deposition chamber, thermal reactor, or the like, including a port with a radiation-transmissive window therein. Interiorly disposed within the chamber is (i) a disposable film on an interior surface of the window and/or (ii) a colorimetric medium disposed in viewable relationship to the window, so that a colorimetric change is perceivable through the window, e.g., visually or by optical sensing device, when the colorimetric medium is exposed to target gas species. Also disclosed is a gas detection article including a polymeric material that is colorimetrically responsive to the presence of at least one target gas species, in exposure thereto.

    Abstract translation: 诸如洗涤器,沉积室,热反应器等半导体制造处理室的窗口化室,包括其中具有辐射透射窗口的端口。 内部设置在腔室内的是(i)窗口内表面上的一次性薄膜和/或(ii)以与窗口可视的关系设置的比色介质,使得可以通过窗口察觉比色变化,例如,视觉上 或通过光学感测装置,当比色介质暴露于目标气体种类时。 还公开了一种气体检测制品,其包括在暴露于其中时比色测定至少一种目标气体种类的存在的聚合物材料。

    ION IMPLANTER SYSTEM INCLUDING REMOTE DOPANT SOURCE, AND METHOD COMPRISING SAME
    9.
    发明申请
    ION IMPLANTER SYSTEM INCLUDING REMOTE DOPANT SOURCE, AND METHOD COMPRISING SAME 审中-公开
    离子植入物系统,包括远距离源物质,以及包含其的方法

    公开(公告)号:WO2012074889A2

    公开(公告)日:2012-06-07

    申请号:PCT/US2011062168

    申请日:2011-11-26

    Abstract: Dopant source gas supply arrangements and methods are described, wherein one or more dopant source gas supply vessels is contained inside an outer enclosure of an ion implantation system, e.g., in a gas box within such enclosure. In one implementation, a dopant source gas supply vessel is positioned in remote relationship to the gas box of the ion implantation system, with a dopant source gas local vessel in the gas box, and a supply line interconnecting the dopant source gas supply vessel in supply relationship to the dopant source gas local vessel, in which the supply line is adapted to flow dopant source gas from the supply vessel to the local vessel only when the ion implantation system is in a non-operational state, and to be evacuated or filled with an inert pressurized gas when the ion implantation system is in an operational state.

    Abstract translation: 描述了掺杂源气体供应装置和方法,其中一个或多个掺杂剂源气体供应容器包含在离子注入系统的外壳内,例如在该外壳内的气体箱中。 在一个实施方案中,掺杂剂源气体供应容器位于与离子注入系统的气体箱的远端关系中,在气体箱中具有掺杂剂源气体本地容器,以及供应管线,用于将掺杂剂源气体供应容器互相供应 与掺杂剂源气体本地容器的关系,其中供应管线仅在离子注入系统处于非操作状态时才将掺杂源气体从供应容器流动到局部容器,并且被排空或填充 当离子注入系统处于操作状态时的惰性加压气体。

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