公开(公告)号：WO2008080096A3

公开(公告)日：2008-11-06

申请号：PCT/US2007088643

申请日：2007-12-21

Applicant: ADVANCED TECH MATERIALS ,  COOPER EMANUEL I ,  SPARKS EILEEN ,  BOWERS WILLIAM R ,  BISCOTTO MARK A ,  YANDERS KEVIN P ,  KORZENSKI MICHAEL B ,  SONTHALIA PRERNA ,  THOMAS NICOLE E

Inventor： COOPER EMANUEL I ,  SPARKS EILEEN ,  BOWERS WILLIAM R ,  BISCOTTO MARK A ,  YANDERS KEVIN P ,  KORZENSKI MICHAEL B ,  SONTHALIA PRERNA ,  THOMAS NICOLE E

IPC: C09K13/08 ,  H01L21/311

CPC classification number: H01L21/31111 ,  B65D85/70 ,  C09K13/08 ,  G03F7/422 ,  H01L21/0206 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Compositions useful for the selective removal of silicon nitride materials relative to poly-silicon, silicon oxide materials and/or silicide materials from a microelectronic device having same thereon. The removal compositions include fluorosilicic acid, silicic acid, and at least one organic solvent. Typical process temperatures are less than about 100 °C and typical selectivity for nitride versus oxide etch is about 200:1 to about 2000:1. Under typical process conditions, nickel-based silicides as well as titanium and tantalum nitrides are largely unaffected, and polysilicon etch rates are less than about 1 Å min -1 .

Abstract translation: 用于相对于多晶硅，氧化硅材料和/或硅化物材料从其上具有相同的微电子器件选择性去除氮化硅材料的组合物。 除去组合物包括氟硅酸，硅酸和至少一种有机溶剂。 典型的工艺温度低于约100℃，氮化物与氧化物蚀刻的典型选择性为约200:1至约2000:1。 在典型的工艺条件下，镍基硅化物以及钛和钽氮化物在很大程度上不受影响，多晶硅蚀刻速率小于约1埃。

公开(公告)号：SG177201A1

公开(公告)日：2012-01-30

申请号：SG2011091790

申请日：2007-12-21

Applicant: ADVANCED TECH MATERIALS

Inventor： COOPER EMANUEL I ,  SPARKS EILEEN ,  BOWERS WILLIAM R ,  BISCOTTO MARK A ,  YANDERS KEVIN P ,  KORZENSKI MICHAEL B ,  SONTHALIA PRERNA ,  THOMAS NICOLE E

Abstract: Abstract COMPOSITIONS AND METHODS FOR THE SELECTIVE REMOVAL OFSILICON NITRIDECompositions useful for the selective removal of silicon nitride materials relative to poly-silicon, silicon oxide materials and/or silicide materials from a microelectronic device having same thereon. The removal compositions include fluorosilicic acid, silicic acid, and at least one organic solvent. Typical process temperatures are less than about 100°C and typical selectivity for nitride versus oxide etch is about 200:1 to about 2000:1. Under typical process conditions, nickel-based silicides as well as titanium and tantalum nitrides are largely unaffected, and polysilicon etch rates are less than about 1 A min -1Figure 1