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公开(公告)号：WO2012048079A2
公开(公告)日：2012-04-12
申请号：PCT/US2011055049
申请日：2011-10-06
Applicant: ADVANCED TECH MATERIALS , CHEN TIANNIU , THOMAS NICOLE E , LIPPY STEVEN , BARNES JEFFREY A , COOPER EMANUEL I , ZHANG PENG
Inventor： CHEN TIANNIU , THOMAS NICOLE E , LIPPY STEVEN , BARNES JEFFREY A , COOPER EMANUEL I , ZHANG PENG
CPC classification number: H01L21/28088 , B81C1/00539 , H01L21/28079 , H01L21/32134 , H01L21/823842
Abstract: A removal composition and process for selectively removing a first metal gate material (e.g., titanium nitride) relative to a second metal gate material (e.g., tantalum nitride) from a microelectronic device having said material thereon. The removal composition can include fluoride or alternatively be substantially devoid of fluoride. The substrate preferably comprises a high-k/metal gate integration scheme.
Abstract translation: 一种用于从其上具有所述材料的微电子器件相对于第二金属栅极材料（例如，氮化钽）选择性地移除第一金属栅极材料（例如，氮化钛）的移除组合物和工艺。 去除组合物可以包括氟化物或者可选地基本上不含氟化物。 衬底优选地包括高k /金属栅集成方案。
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2.发明申请
公开(公告)号：WO2008080096A3
公开(公告)日：2008-11-06
申请号：PCT/US2007088643
申请日：2007-12-21
Applicant: ADVANCED TECH MATERIALS , COOPER EMANUEL I , SPARKS EILEEN , BOWERS WILLIAM R , BISCOTTO MARK A , YANDERS KEVIN P , KORZENSKI MICHAEL B , SONTHALIA PRERNA , THOMAS NICOLE E
Inventor： COOPER EMANUEL I , SPARKS EILEEN , BOWERS WILLIAM R , BISCOTTO MARK A , YANDERS KEVIN P , KORZENSKI MICHAEL B , SONTHALIA PRERNA , THOMAS NICOLE E
IPC: C09K13/08 , H01L21/311
CPC classification number: H01L21/31111 , B65D85/70 , C09K13/08 , G03F7/422 , H01L21/0206 , H01L2924/0002 , H01L2924/00
Abstract: Compositions useful for the selective removal of silicon nitride materials relative to poly-silicon, silicon oxide materials and/or silicide materials from a microelectronic device having same thereon. The removal compositions include fluorosilicic acid, silicic acid, and at least one organic solvent. Typical process temperatures are less than about 100 °C and typical selectivity for nitride versus oxide etch is about 200:1 to about 2000:1. Under typical process conditions, nickel-based silicides as well as titanium and tantalum nitrides are largely unaffected, and polysilicon etch rates are less than about 1 Å min -1 .
Abstract translation: 用于相对于多晶硅，氧化硅材料和/或硅化物材料从其上具有相同的微电子器件选择性去除氮化硅材料的组合物。 除去组合物包括氟硅酸，硅酸和至少一种有机溶剂。 典型的工艺温度低于约100℃，氮化物与氧化物蚀刻的典型选择性为约200:1至约2000:1。 在典型的工艺条件下，镍基硅化物以及钛和钽氮化物在很大程度上不受影响，多晶硅蚀刻速率小于约1埃。
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公开(公告)号：SG177201A1
公开(公告)日：2012-01-30
申请号：SG2011091790
申请日：2007-12-21
Applicant: ADVANCED TECH MATERIALS
Inventor： COOPER EMANUEL I , SPARKS EILEEN , BOWERS WILLIAM R , BISCOTTO MARK A , YANDERS KEVIN P , KORZENSKI MICHAEL B , SONTHALIA PRERNA , THOMAS NICOLE E
Abstract: Abstract COMPOSITIONS AND METHODS FOR THE SELECTIVE REMOVAL OFSILICON NITRIDECompositions useful for the selective removal of silicon nitride materials relative to poly-silicon, silicon oxide materials and/or silicide materials from a microelectronic device having same thereon. The removal compositions include fluorosilicic acid, silicic acid, and at least one organic solvent. Typical process temperatures are less than about 100°C and typical selectivity for nitride versus oxide etch is about 200:1 to about 2000:1. Under typical process conditions, nickel-based silicides as well as titanium and tantalum nitrides are largely unaffected, and polysilicon etch rates are less than about 1 A min -1Figure 1
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公开(公告)号：SG189292A1
公开(公告)日：2013-05-31
申请号：SG2013025697
申请日：2011-10-06
Applicant: ADVANCED TECH MATERIALS
Inventor： CHEN TIANNIU , THOMAS NICOLE E , LIPPY STEVEN , BARNES JEFFREY A , COOPER EMANUEL I , ZHANG PENG
Abstract: A removal composition and process for selectively removing a first metal gate material (e.g., titanium nitride) relative to a second metal gate material (e.g., tantalum nitride) from a microelectronic device having said material thereon. The removal composition can include fluoride or alternatively be substantially devoid of fluoride. The substrate preferably comprises a high-k/metal gate integration scheme.
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