公开(公告)号：WO2012074889A2

公开(公告)日：2012-06-07

申请号：PCT/US2011062168

申请日：2011-11-26

Applicant: ADVANCED TECH MATERIALS ,  OLANDER W KARL ,  KAIM ROBERT ,  SWEENEY JOSEPH D ,  DESPRES JOSEPH R

Inventor： OLANDER W KARL ,  KAIM ROBERT ,  SWEENEY JOSEPH D ,  DESPRES JOSEPH R

IPC: H01L21/265 ,  H01J37/30

CPC classification number: C23C14/48 ,  H01J37/08 ,  H01J37/3171 ,  H01J2237/006 ,  Y10T137/8593

Abstract: Dopant source gas supply arrangements and methods are described, wherein one or more dopant source gas supply vessels is contained inside an outer enclosure of an ion implantation system, e.g., in a gas box within such enclosure. In one implementation, a dopant source gas supply vessel is positioned in remote relationship to the gas box of the ion implantation system, with a dopant source gas local vessel in the gas box, and a supply line interconnecting the dopant source gas supply vessel in supply relationship to the dopant source gas local vessel, in which the supply line is adapted to flow dopant source gas from the supply vessel to the local vessel only when the ion implantation system is in a non-operational state, and to be evacuated or filled with an inert pressurized gas when the ion implantation system is in an operational state.

Abstract translation: 描述了掺杂源气体供应装置和方法，其中一个或多个掺杂剂源气体供应容器包含在离子注入系统的外壳内，例如在该外壳内的气体箱中。 在一个实施方案中，掺杂剂源气体供应容器位于与离子注入系统的气体箱的远端关系中，在气体箱中具有掺杂剂源气体本地容器，以及供应管线，用于将掺杂剂源气体供应容器互相供应 与掺杂剂源气体本地容器的关系，其中供应管线仅在离子注入系统处于非操作状态时才将掺杂源气体从供应容器流动到局部容器，并且被排空或填充 当离子注入系统处于操作状态时的惰性加压气体。

公开(公告)号：WO2011160105A3

公开(公告)日：2012-04-05

申请号：PCT/US2011041013

申请日：2011-06-18

Applicant: ADVANCED TECH MATERIALS ,  SWEENEY JOSEPH D ,  AVILA ANTHONY M ,  WODJENSKI MICHAEL J ,  DESPRES JOSEPH R ,  BAUM THOMAS H

Inventor： SWEENEY JOSEPH D ,  AVILA ANTHONY M ,  WODJENSKI MICHAEL J ,  DESPRES JOSEPH R ,  BAUM THOMAS H

IPC: H01L21/66 ,  H01L21/02

CPC classification number: F17D3/01 ,  F17D3/00 ,  G05D7/0635 ,  H01J37/3171 ,  H01J2237/006 ,  H01J2237/30466 ,  H01L21/67017 ,  H01L21/67253 ,  Y10T137/0324 ,  Y10T137/86389

Abstract: Apparatus and method for determining endpoint of a fluid supply vessel in which fluid flow is controlled through a flow passage disposed in an interior volume of the fluid supply vessel with a static flow restricting device and a selectively actuatable valve element upon establishing fluid flow. The endpoint determination can be employed to terminate fluid supply from the fluid supply vessel and/or to switch from a fluid-depleted supply vessel to a fresh vessel for continuity or renewal of fluid supply operation. The apparatus and method are suitable for use with fluidutilizing apparatus such as ion implanters.

Abstract translation: 用于确定流体供应容器的端点的装置和方法，其中通过设置在流体供应容器的内部容积中的流动通道在流体流动建立时具有静态流动限制装置和可选择性致动的阀元件来控制流体流动。 端点确定可以用于终止从流体供应容器供应的流体和/或从流体耗尽的供应容器切换到新鲜容器，以便连续或更新流体供应操作。 该设备和方法适用于诸如离子注入机之类的流体分解装置。

公开(公告)号：SG186381A1

公开(公告)日：2013-01-30

申请号：SG2012092904

申请日：2011-06-18

Applicant: ADVANCED TECH MATERIALS

Inventor： SWEENEY JOSEPH D ,  AVILA ANTHONY M ,  WODJENSKI MICHAEL J ,  DESPRES JOSEPH R ,  BAUM THOMAS H

Abstract: Apparatus and method for determining endpoint of a fluid supply vessel in which fluid flow is controlled through a flow passage disposed in an interior volume of the fluid supply vessel with a static flow restricting device and a selectively actuatable valve element upon establishing fluid flow. The endpoint determination can be employed to terminate fluid supply from the fluid supply vessel and/or to switch from a fluid-depleted supply vessel to a fresh vessel for continuity or renewal of fluid supply operation. The apparatus and method are suitable for use with fluidutilizing apparatus such as ion implanters.

公开(公告)号：SG190729A1

公开(公告)日：2013-07-31

申请号：SG2013041694

申请日：2011-11-26

Applicant: ADVANCED TECH MATERIALS

Inventor： OLANDER W KARL ,  KAIM ROBERT ,  SWEENEY JOSEPH D ,  DESPRES JOSEPH R

Abstract: Dopant source gas supply arrangements and methods are described, wherein one or more dopant source gas supply vessels is contained inside an outer enclosure of an ion implantation system, e.g., in a gas box within such enclosure. In one implementation, a dopant source gas supply vessel is positioned in remote relationship to the gas box of the ion implantation system, with a dopant source gas local vessel in the gas box, and a supply line interconnecting the dopant source gas supply vessel in supply relationship to the dopant source gas local vessel, in which the supply line is adapted to flow dopant source gas from the supply vessel to the local vessel only when the ion implantation system is in a non-operational state, and to be evacuated or filled with an inert pressurized gas when the ion implantation system is in an operational state.