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    SYSTEM FOR IN-SITU GENERATION OF FLUORINE RADICALS AND/OR FLUORINE-CONTAINING INTERHALOGEN (XFN) COMPOUNDS FOR USE IN CLEANING SEMICONDUCTOR PROCESSING CHAMBERS
    1.
    发明申请
    SYSTEM FOR IN-SITU GENERATION OF FLUORINE RADICALS AND/OR FLUORINE-CONTAINING INTERHALOGEN (XFN) COMPOUNDS FOR USE IN CLEANING SEMICONDUCTOR PROCESSING CHAMBERS 审中-公开
    用于清洁半导体加工室的氟原子和/或含氟的卤素（XFN）化合物的原位生成系统

    公开(公告)号：WO2004030037A3

    公开(公告)日：2004-05-21

    申请号：PCT/US0329940

    申请日：2003-09-23

    Applicant: ADVANCED TECH MATERIALS

    Inventor： ARNO JOSE I ,  OLANDER W KARL

    IPC: B08B7/00 ,  C23C16/44 ,  A61L2/00 ,  C01B7/00 ,  C01F5/28

    CPC classification number: H01J37/32862 ,  B08B7/0035 ,  C23C16/4405

    Abstract: A system (10) for in-situ generation of fluorine radicals and/or fluorine-containing interhalogen compounds XFn (wherein X is Cl, Br, or I, and n is an odd integer). Such system comprises a fluorine source (1), a halogen source (2) for supplying halogen species other than fluorine, a chamber (4) for mixing fluorine with halogen species other than fluorine, and an energy source (6) to supply energy to such chamber to facilitate reaction between fluorine and the halogen species other than fluorine. The chamber may be a semiconductor chamber (5), wherein the in-situ generated fluorine radicals and/or fluorine-containing interhalogens are employed for cleaning the processing chamber.

    Abstract translation: 一种用于原位产生氟自由基和/或含氟间卤素化合物XFn（其中X是Cl，Br或I，并且n是奇数）的系统（10）。 该系统包括氟源（1），用于供应除氟以外的卤素物质的卤素源（2），用于将氟与除氟以外的卤素物质混合的腔室（4），以及用于向 这种室促进氟和除氟以外的卤素物质之间的反应。 腔室可以是半导体腔室（5），其中使用原位产生的氟自由基和/或含氟间卤素来清洁处理腔室。

    ION IMPLANTER SYSTEM INCLUDING REMOTE DOPANT SOURCE, AND METHOD COMPRISING SAME
    5.
    发明申请
    ION IMPLANTER SYSTEM INCLUDING REMOTE DOPANT SOURCE, AND METHOD COMPRISING SAME 审中-公开
    离子植入物系统，包括远距离源物质，以及包含其的方法

    公开(公告)号：WO2012074889A2

    公开(公告)日：2012-06-07

    申请号：PCT/US2011062168

    申请日：2011-11-26

    Applicant: ADVANCED TECH MATERIALS ,  OLANDER W KARL ,  KAIM ROBERT ,  SWEENEY JOSEPH D ,  DESPRES JOSEPH R

    Inventor： OLANDER W KARL ,  KAIM ROBERT ,  SWEENEY JOSEPH D ,  DESPRES JOSEPH R

    IPC: H01L21/265 ,  H01J37/30

    CPC classification number: C23C14/48 ,  H01J37/08 ,  H01J37/3171 ,  H01J2237/006 ,  Y10T137/8593

    Abstract: Dopant source gas supply arrangements and methods are described, wherein one or more dopant source gas supply vessels is contained inside an outer enclosure of an ion implantation system, e.g., in a gas box within such enclosure. In one implementation, a dopant source gas supply vessel is positioned in remote relationship to the gas box of the ion implantation system, with a dopant source gas local vessel in the gas box, and a supply line interconnecting the dopant source gas supply vessel in supply relationship to the dopant source gas local vessel, in which the supply line is adapted to flow dopant source gas from the supply vessel to the local vessel only when the ion implantation system is in a non-operational state, and to be evacuated or filled with an inert pressurized gas when the ion implantation system is in an operational state.

    Abstract translation: 描述了掺杂源气体供应装置和方法，其中一个或多个掺杂剂源气体供应容器包含在离子注入系统的外壳内，例如在该外壳内的气体箱中。 在一个实施方案中，掺杂剂源气体供应容器位于与离子注入系统的气体箱的远端关系中，在气体箱中具有掺杂剂源气体本地容器，以及供应管线，用于将掺杂剂源气体供应容器互相供应 与掺杂剂源气体本地容器的关系，其中供应管线仅在离子注入系统处于非操作状态时才将掺杂源气体从供应容器流动到局部容器，并且被排空或填充 当离子注入系统处于操作状态时的惰性加压气体。

    DELIVERY OF LOW PRESSURE DOPANT GAS TO A HIGH VOLTAGE ION SOURCE
    6.
    发明申请
    DELIVERY OF LOW PRESSURE DOPANT GAS TO A HIGH VOLTAGE ION SOURCE 审中-公开
    将低压多孔气体输送到高压离子源

    公开(公告)号：WO2007027965A2

    公开(公告)日：2007-03-08

    申请号：PCT/US2006034135

    申请日：2006-08-29

    Applicant: ADVANCED TECH MATERIALS ,  ARNO JOSE I ,  OLANDER W KARL ,  KAIM ROBERT

    Inventor： ARNO JOSE I ,  OLANDER W KARL ,  KAIM ROBERT

    IPC: B05D3/00

    CPC classification number: H01J37/08 ,  H01J27/02 ,  H01J37/3172 ,  H01J2237/0203

    Abstract: A system for delivery of low-pressure dopant gas to a high-voltage ion source in the doping of semiconductor substrates, in which undesired ionization of the gas is suppressed prior to entry into the high-voltage ion source, by modulating electron energy upstream of the high-voltage ion source so that electron acceleration effects are reduced to below a level supporting an electronic ionization cascade. The gas delivery system in a specific application includes a gas flow passage, a voltage generator electrically coupled with at least a portion of the gas flow passage to impose an electric field thereon, and an obstructive structure that is deployed to modulate acceleration length of electrons of the low-pressure gas in relation to ionization potential of the gas, to suppress ionization in the gas flow passage.

    Abstract translation: 一种用于在半导体衬底的掺杂中向高电压离子源传送低压掺杂气体的系统，其中在进入高压离子源之前，气体的不期望的电离被抑制，通过调制 高电压离子源，使得电子加速效应降低到低于支持电子离子化级联的水平。 具体应用中的气体输送系统包括气体流动通道，与气体流动通道的至少一部分电耦合以在其上施加电场的电压发生器，以及阻塞结构，其被展开以调制电子的加速度长度 相对于气体的电离电位的低压气体，抑制气体流路中的电离。

    SUB-ATMOSPHERIC PRESSURE DELIVERY OF LIQUIDS, SOLIDS AND LOW VAPOR PRESSURE GASES
    7.
    发明申请
    SUB-ATMOSPHERIC PRESSURE DELIVERY OF LIQUIDS, SOLIDS AND LOW VAPOR PRESSURE GASES 审中-公开
    液体，固体和低气压气体的亚大气压输送

    公开(公告)号：WO2004073849A2

    公开(公告)日：2004-09-02

    申请号：PCT/US2004004562

    申请日：2004-02-17

    Applicant: ADVANCED TECH MATERIALS ,  OLANDER W KARL

    Inventor： OLANDER W KARL

    IPC: C23C16/448 ,  C23C16/52 ,  H01L21/00 ,  B01J

    CPC classification number: H01L21/67017 ,  C23C16/4481 ,  C23C16/52 ,  F17C2205/0338 ,  F17C2205/0391 ,  Y10T137/87587

    Abstract: A delivery system and method for vaporizing and delivery of vaporized solid and liquid precursor materials at sub-atmospheric pressures between a heatable vaporization vessel and a processing tool. The system includes a pressure regulator internally positioned within the vaporization vessel and in fluid communication with a downstream mass flow controller to maintain a consistent flow of vaporized source material. The system further comprises introducing a carrier/diluent gas for diluting the vaporized source material before entry into the processing tool. A venturi is positioned directly upstream of the processing tool and provides for mixing of the carrier gas with the vaporized source material while providing the negative pressure required to open the gas pressure regulator within the vaporization vessel.

    Abstract translation: 一种用于在可加热蒸发容器和加工工具之间的亚常压下汽化和输送蒸发的固体和液体前体材料的递送系统和方法。 该系统包括内部定位在蒸发容器内并与下游质量流量控制器流体连通的压力调节器，以保持一致的气化源材料流。 该系统还包括在进入加工工具之前引入用于稀释蒸发的源材料的载体/稀释气体。 文丘里管直接位于加工工具的上游，并提供载气与蒸发的源材料的混合，同时提供在蒸发容器内打开气体压力调节器所需的负压。

    CLEANING OF SEMICONDUCTOR PROCESSING SYSTEMS
    9.
    发明申请
    CLEANING OF SEMICONDUCTOR PROCESSING SYSTEMS 审中-公开
    半导体加工系统的清洁

    公开(公告)号：WO2007127865A3

    公开(公告)日：2008-12-11

    申请号：PCT/US2007067542

    申请日：2007-04-26

    Applicant: ADVANCED TECH MATERIALS ,  DIMEO FRANK JR ,  DIETZ JAMES ,  OLANDER W KARL ,  KAIM ROBERT ,  BISHOP STEVEN E ,  NEUNER JEFFREY W ,  ARNO JOSE I ,  MARGANSKI PAUL J ,  SWEENEY JOSEPH D ,  ELDRIDGE DAVID ,  YEDAVE SHARAD ,  BYL OLEG ,  STAUF GREGORY T

    Inventor： DIMEO FRANK JR ,  DIETZ JAMES ,  OLANDER W KARL ,  KAIM ROBERT ,  BISHOP STEVEN E ,  NEUNER JEFFREY W ,  ARNO JOSE I ,  MARGANSKI PAUL J ,  SWEENEY JOSEPH D ,  ELDRIDGE DAVID ,  YEDAVE SHARAD ,  BYL OLEG ,  STAUF GREGORY T

    IPC: C25F1/00 ,  C25F3/12

    CPC classification number: C23C14/564 ,  C23C16/4405 ,  H01J37/32412 ,  H01J37/32862

    Abstract: A method and apparatus for cleaning residue from components of semiconductor processing systems used in the fabrication of microelectronic devices. To effectively remove residue, the components are contacted with a gas-phase reactive material for sufficient time and under sufficient conditions to at least partially remove the residue. When the residue and the material from which the components are constructed are different, the gas-phase reactive material is selectively reactive with the residue and minimally reactive with the materials from which the components of the ion implanter are constructed. When the residue and the material from which the components are constructed is the same, then the gas-phase reactive material may be reactive with both the residue and the component part. Particularly preferred gas-phase reactive materials utilized comprise gaseous compounds such as XeF2, XeF4, XeF6, NF3, IF5, IF7, SF6, C2F6, F2, CF4, KrF2, Cl2, HCl, ClF3, ClO2, N2F4, N2F2, N3F, NFH2, NH2F, HOBr, Br2, C3F8, C4F8, C5F8, CHF3, CH2F2, CH3F, COF2, HF, C2HF5, C2H2F4, C2H3F3, C2H4F2, C2H5F, C3F6, and organochlorides such as COCl2, CCl4, CHCl3, CH2Cl2 and CH3Cl.

    Abstract translation: 一种清洁残留物的方法和装置，用于制造微电子装置中使用的半导体处理系统的组件。 为了有效地除去残留物，将组分与气相反应性材料接触足够的时间和足够的条件以至少部分地除去残余物。 当残留物和构成组分的材料不同时，气相反应性材料与残余物选择性反应，并与构成离子注入机的组分的材料具有最低的反应性。 当残留物和构成组分的材料相同时，气相反应性材料可以与残留物和组分部分反应。 使用的特别优选的气相反应性材料包括气态化合物如XeF 2，XeF 4，XeF 6，NF 3，IF 5，IF 7，SF 6，C 2 F 6，F 2，CF 4，KrF 2，Cl 2，HCl，ClF 3，ClO 2，N 2 F 4，N 2 F 2，N 3 F， ，NH2F，HOBr，Br2，C3F8，C4F8，C5F8，CHF3，CH2F2，CH3F，COF2，HF，C2HF5，C2H2F4，C2H3F3，C2H4F2，C2H5F，C3F6和有机氯化物，如COCl2，CCl4，CHCl3，CH2Cl2和CH3Cl。

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