公开(公告)号：WO2011119895A3

公开(公告)日：2011-12-22

申请号：PCT/US2011029880

申请日：2011-03-24

Applicant: ADVANCED TECH MATERIALS ,  LI WEIMIN

Inventor： LI WEIMIN

IPC: H01L27/115 ,  H01L21/8247

CPC classification number: H01L45/06 ,  H01L45/124 ,  H01L45/144 ,  H01L45/1691

Abstract: Phase change memory (PCM) device structures are described, in which the phase change material is seamless, thereby obviating void issues that are associated with decreased device performance. Such PCM device structures can be readily formed by a trench technique in which phase change material is conformally deposited on trench side wall and bottom surfaces, followed by removal of the phase change material from the bottom surface, deposition of a dielectric passivation layer and thereafter oxide and/or nitride material, followed by CMP to remove dielectric and oxide/nitride material, and expose top surfaces of the phase change material. A top electrode then is formed in contact with the exposed top surfaces of the phase change material to provide a top electrode/PCM device structure including the seamless PCM material.

Abstract translation: 描述了相变存储器（PCM）器件结构，其中相变材料是无缝的，从而消除与降低的器件性能相关联的空隙问题。 这样的PCM器件结构可以通过沟槽技术容易地形成，其中相变材料共形沉积在沟槽侧壁和底表面上，随后从底表面去除相变材料，然后沉积介电钝化层，然后氧化物 和/或氮化物材料，随后用CMP去除电介质和氧化物/氮化物材料，并暴露相变材料的顶表面。 然后，顶部电极形成为与相变材料的暴露的顶表面接触，以提供包括无缝PCM材料的顶部电极/ PCM装置结构。

公开(公告)号：WO2010107878A3

公开(公告)日：2011-01-20

申请号：PCT/US2010027614

申请日：2010-03-17

Applicant: ADVANCED TECH MATERIALS ,  LUBGUBAN JORGE A JR ,  CAMERON THOMAS M ,  XU CHONGYING ,  LI WEIMIN

Inventor： LUBGUBAN JORGE A JR ,  CAMERON THOMAS M ,  XU CHONGYING ,  LI WEIMIN

IPC: H01L21/205 ,  H01L21/8242 ,  H01L27/108

CPC classification number: C23C16/0272 ,  C23C16/18 ,  C23C16/45534 ,  H01L28/65

Abstract: A method of forming a ruthenium-containing film in a vapor deposition process, including depositing ruthenium with an assistive metal species that increases the rate and extent of ruthenium deposition in relation to deposition of ruthenium in the absence of such assistive metal species. An illustrative precursor composition useful for carrying out such method includes a ruthenium precursor and a strontium precursor in a solvent medium, wherein one of the ruthenium and strontium precursors includes a pendant functionality that coordinates with the central metal atom of the other precursor, so that ruthenium and strontium co-deposit with one another. The method permits incubation time for ruthenium deposition on non-metallic substrates to be very short, thereby accommodating very rapid film formation in processes such as atomic layer deposition.

Abstract translation: 一种在气相沉积工艺中形成含钌膜的方法，包括用辅助金属物质沉积钌，其在不存在这种辅助金属物质的情况下相对于沉积钌而增加钌沉积的速率和程度。 用于实施这种方法的说明性前体组合物包括在溶剂介质中的钌前体和锶前体，其中钌和锶前体之一包括与另一前体的中心金属原子配位的侧链官能团，使得钌 和锶共沉积。 该方法允许在非金属基底上钌沉积的孵育时间非常短，从而在诸如原子层沉积的过程中容纳非常快速的成膜。

公开(公告)号：SG174423A1

公开(公告)日：2011-10-28

申请号：SG2011066719

申请日：2010-03-17

Applicant: ADVANCED TECH MATERIALS

Inventor： LUBGUBAN JORGE A JR ,  CAMERON THOMAS M ,  XU CHONGYING ,  LI WEIMIN

Abstract: A method of forming a ruthenium-containing film in a vapor deposition process, including depositing ruthenium with an assistive metal species that increases the rate and extent of ruthenium deposition in relation to deposition of ruthenium in the absence of such assistive metal species. An illustrative precursor composition useful for carrying out such method includes a ruthenium precursor and a strontium precursor in a solvent medium, wherein one of the ruthenium and strontium precursors includes a pendant functionality that coordinates with the central metal atom of the other precursor, so that ruthenium and strontium co-deposit with one another. The method permits incubation time for ruthenium deposition on non-metallic substrates to be very short, thereby accommodating very rapid film formation in processes such as atomic layer deposition.

公开(公告)号：SG152203A1

公开(公告)日：2009-05-29

申请号：SG2008080699

申请日：2008-10-30

Applicant: ADVANCED TECH MATERIALS

Inventor： CHEN PHILIP S H ,  HUNKS WILLIAM ,  CHEN TIANNIU ,  STENDER MATTHIAS ,  XU CHONGYING ,  ROEDER JEFFREY F ,  LI WEIMIN

Abstract: Germanium, tellurium, and/or antimony precursors are usefully employed to form germanium-, tellurium- and/or antimony-containing films, such as films of GeTe, GST, and thermoelectric germanium-containing films. Processes for using these precursors to form amorphous films are also described. Further described is the use of [{nBuC(iPrN)2)2Ge] or Ge butyl amidinate to form GeTe smooth amorphous films for phase change memory applications. Figure 13