公开(公告)号：WO2009134989A2

公开(公告)日：2009-11-05

申请号：PCT/US2009042290

申请日：2009-04-30

Applicant: ADVANCED TECH MATERIALS ,  CHEN TIANNIU ,  HUNKS WILLIAM ,  CHEN PHILIP S H ,  XU CHONGYING ,  MAYLOTT LEAH

Inventor： CHEN TIANNIU ,  HUNKS WILLIAM ,  CHEN PHILIP S H ,  XU CHONGYING ,  MAYLOTT LEAH

IPC: C07F9/90 ,  H01L21/20 ,  H01L45/00

CPC classification number: H01L21/02568 ,  C07C211/65 ,  C07F9/902 ,  C07F9/908 ,  C23C16/18 ,  H01L45/06 ,  H01L45/144 ,  H01L45/1616

Abstract: Precursors for use in depositing antimony-containing films on substrates such as wafers or other microelectronic device substrates, as well as associated processes of making and using such precursors, and source packages of such precursors. The precursors are useful for deposition of Ge2Sb2Te5 chalcogenide thin films in the manufacture of nonvolatile Phase Change Memory (PCM) or for the manufacturing of thermoelectric devices, by deposition techniques such as chemical vapor deposition (CVD) and atomic layer deposition (ALD).

Abstract translation: 用于在诸如晶片或其他微电子器件基底的基底上沉积含锑膜的前体，以及制备和使用这些前体的相关工艺以及这些前体的源封装。 这些前体可用于通过诸如化学气相沉积（CVD）和原子层沉积（ALD）的沉积技术在制造非易失性相变存储器（PCM）中或用于制造热电装置时沉积Ge2Sb2Te5硫族化物薄膜。

公开(公告)号：WO2009059237A3

公开(公告)日：2009-09-24

申请号：PCT/US2008082134

申请日：2008-10-31

Applicant: ADVANCED TECH MATERIALS ,  CHEN TIANNIU ,  XU CHONGYING ,  HENDRIX BRYAN C ,  HUNKS WILLIAM ,  CAMERON THOMAS M ,  STENDER MATTHIAS ,  STAUF GREGORY T ,  ROEDER JEFFREY F

Inventor： CHEN TIANNIU ,  XU CHONGYING ,  HENDRIX BRYAN C ,  HUNKS WILLIAM ,  CAMERON THOMAS M ,  STENDER MATTHIAS ,  STAUF GREGORY T ,  ROEDER JEFFREY F

IPC: C07F9/94

CPC classification number: C07F9/94

Abstract: Bismuth precursors having utility for forming highly conformal bismuth-containing films by low temperature (

Abstract translation: 具有用于通过低温（<300℃）气相沉积方法如CVD和ALD形成高保形含铋膜的铋前体，包括氨基铋，胍铋酸盐，异钌酸铋，氨基甲酸铋和硫代氨基甲酸铋，β-二酮铋酸铋 铋铋，二酮铋，铋铋，铋基铋，烷氧基铋，铋配合物，铋甲硅烷基酰胺，铋螯合酰胺和铋二碲酰亚胺二磷酸铋。 还描述了制备这种前体的方法，以及适用于制造微电子器件产品的这种前体的包装形式。 这些铋前体有利地用于形成含铋的膜，例如GBT，Bi2Te3，Bi4Ti3O12，SrBi2Ta2O9，Bi-Ta-O，BiP和含热电铋膜的膜。

公开(公告)号：WO2008057616A8

公开(公告)日：2010-03-18

申请号：PCT/US2007063830

申请日：2007-03-12

Applicant: ADVANCED TECH MATERIALS ,  HUNKS WILLIAM ,  CHEN TIANNIU ,  XU CHONGYING ,  ROEDER JEFFREY F ,  BAUM THOMAS H ,  PETRUSKA MELISSA A ,  STENDER MATTHIAS ,  CHEN PHILIP S H ,  STAUF GREGORY T ,  HENDRIX BRYAN C

Inventor： HUNKS WILLIAM ,  CHEN TIANNIU ,  XU CHONGYING ,  ROEDER JEFFREY F ,  BAUM THOMAS H ,  PETRUSKA MELISSA A ,  STENDER MATTHIAS ,  CHEN PHILIP S H ,  STAUF GREGORY T ,  HENDRIX BRYAN C

IPC: C23C16/00 ,  H01L21/20 ,  H01L31/20

CPC classification number: H01L45/1616 ,  C07C251/08 ,  C07F7/003 ,  C07F7/10 ,  C07F7/28 ,  C07F9/902 ,  C07F9/904 ,  C07F17/00 ,  C23C16/18 ,  C23C16/305 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/144 ,  H01L45/1683

Abstract: Antimony, germanium and tellurium precursors useful for CVD/ALD of corresponding metal-containing thin films are described, along with compositions including such precursors, methods of making such precursors, and films and microelectronic device products manufactured using such precursors, as well as corresponding manufacturing methods. The precursors of the invention are useful for forming germanium-antimony-tellurium (GST) films and microelectronic device products, such as phase change memory devices, including such films.

Abstract translation: 描述了可用于相应的含金属薄膜的CVD / ALD的锑，锗和碲前体，以及包含这些前体的组合物，制备这种前体的方法，以及使用这种前体制备的膜和微电子器件产品，以及相应的制造 方法。 本发明的前体可用于形成锗 - 锑 - 碲（GST）膜和微电子器件产品，例如包括这种膜的相变存储器件。

公开(公告)号：SG176449A1

公开(公告)日：2011-12-29

申请号：SG2011080819

申请日：2007-03-12

Applicant: ADVANCED TECH MATERIALS

Inventor： HUNKS WILLIAM ,  CHEN TIANNIU ,  XU CHONGYING ,  ROEDER JEFFREY F ,  BAUM THOMAS H ,  PETRUSKA MELISSA A ,  STENDER MATTHIAS ,  CHEN PHILIP S H ,  STAUF GREGORY T ,  HENDRIX BRYAN C

Abstract: ANTIMONY AND GERMANIUM COMPLEXES USEFUL FOR CVD/ALD OF METAL THIN FILMSAbstractAntimony, germanium and tellurium precursors useful for CVD/ALD of corresponding metal-containing thin films are described, along with compositions including such precursors, methods of making such precursors, and films and microelectronic device products manufactured using such precursors, as well as corresponding manufacturing methods. The precursors of the invention are useful for forming germanium-antimony tellurium (GST) films and microelectronic device products, such as phase change memory devices, including such filmsFigure 1

公开(公告)号：SG171683A1

公开(公告)日：2011-06-29

申请号：SG2011033982

申请日：2007-03-12

Applicant: ADVANCED TECH MATERIALS

Inventor： ROEDER JEFFREY F ,  BAUM THOMAS H ,  HENDRIX BRYAN C ,  STAUF GREGORY T ,  XU CHONGYING ,  HUNKS WILLIAM ,  CHEN TIANNIU ,  STENDER MATTHIAS

Abstract: A system and method for forming a phase change memory material on a substrate, in which the substrate is contacted with precursors for a phase change memory chalcogenide alloy under conditions producing deposition of the chalcogenide alloy on the substrate, at temperature below 350 degree C, with the contacting being carried out via chemical vapor deposition or atomic layer deposition. Various tellurium, germanium and germanium-tellurium precursors are described, which are useful for forming GST phase change memory films on substrates.

公开(公告)号：WO2012005957A2

公开(公告)日：2012-01-12

申请号：PCT/US2011041545

申请日：2011-06-23

Applicant: ADVANCED TECH MATERIALS ,  CISSELL JULIE ,  XU CHONGYING ,  CAMERON THOMAS M ,  HUNKS WILLIAM

Inventor： CISSELL JULIE ,  XU CHONGYING ,  CAMERON THOMAS M ,  HUNKS WILLIAM

IPC: H01L21/314 ,  H01L21/205 ,  H01L21/8242 ,  H01L27/108

CPC classification number: H01L28/40 ,  C23C16/45525 ,  H01L21/02189 ,  H01L21/02194 ,  H01L21/0228

Abstract: A method of forming a dielectric material, comprising doping a zirconium oxide material, using a dopant precursor selected from the group consisting of Ti(NMe2)4; Ti(NMeEt)4; Ti(NEt2)4; TiCl4; tBuN=Nb(NEt2)3; tBuN=Nb(NMe2)3; t-BuN=Nb(NEtMe)3; t- AmN=Nb(NEt2)3; t-AmN=Nb(NEtMe)3; t-AmN=Nb(NMe2)3; t-AmN=Nb(OBu-t)3; Nb-13; Nb(NEt2)4; Nb(NEt2)5; Nb(N(CH3)2)5; Nb(OC2H5)5; Nb(thd)(OPr-i)4; SiH(OMe)3; SiCU; Si(NMe2)4; (Me3Si)2NH; GeRax(ORb)4.x wherein x is from 0 to 4, each Ra is independently selected from H or C1-C8 alkyl and each Rb is independently selected from C1-C8 alkyl; GeCl4; Ge(NRa 2)4 wherein each Ra is independently selected from H and C1-C8 alkyl; and (Rb 3Ge)2NH wherein each Rb is independently selected from C1-C8 alkyl; bis(N,N'-diisopropyl-1,3-propanediamide) titanium; and tetrakis(isopropylmethylamido) titanium; wherein Me is methyl, Et is ethyl, Pr-i is isopropyl, t-Bu is tertiary butyl, t-Am is tertiary amyl, and thd is 2,2,6,6-tetramethyl-3,5-heptanedionate. Doped zirconium oxide materials of the present disclosure are usefully employed in ferroelectric capacitors and dynamic random access memory (DRAM) devices.

Abstract translation: 一种形成电介质材料的方法，包括使用选自Ti（NMe 2）4的掺杂剂前体掺杂氧化锆材料; 的Ti（NMeEt）4; 的Ti（NET2）4; 四氯化钛; tBuN =铌（NET2）3; tBuN =铌（NME2）3; 叔BUN =铌（NEtMe）3; t-AmN = Nb（NEt2）3; 叔AMN =铌（NEtMe）3; 叔AMN =铌（NME2）3; 叔AMN =铌（OBU-T）3; NB-13; 铌（NET2）4; 铌（NET2）5; 铌（N（CH3）2）5; 的Nb（OC2H5）5; 铌（THD）（OPR-i）的4; 的SiH（OME）3; 的SiCl 4; 的Si（NME2）4; （Me3Si）2 NH; GeRax（ORb）4.x其中x为0至4，每个R a独立地选自H或C 1 -C 8烷基，并且每个R b独立地选自C 1 -C 8烷基; GeCl4; Ge（NRa 2）4，其中每个R a独立地选自H和C 1 -C 8烷基; 和（R b 3Ge）2 NH，其中每个R b独立地选自C 1 -C 8烷基; 双（N，N'-二异丙基-1,3-丙二酰胺）钛; 和四（异丙基甲基氨基）钛; 其中Me是甲基，Et是乙基，Pr-i是异丙基，t-Bu是叔丁基，t-Am是叔戊基，thd是2,2,6,6-四甲基-3,5-庚二酮酸。 本公开的掺杂氧化锆材料有用地用于铁电电容器和动态随机存取存储器（DRAM）器件中。

公开(公告)号：WO2008057616A3

公开(公告)日：2009-04-09

申请号：PCT/US2007063830

申请日：2007-03-12

Applicant: ADVANCED TECH MATERIALS ,  HUNKS WILLIAM ,  CHEN TIANNIU ,  XU CHONGYING ,  ROEDER JEFFREY F ,  BAUM THOMAS H ,  PETRUSKA MELISSA A ,  STENDER MATTHIAS ,  CHEN PHILIP S H ,  STAUF GREGORY T ,  HENDRIX BRYAN C

Inventor： HUNKS WILLIAM ,  CHEN TIANNIU ,  XU CHONGYING ,  ROEDER JEFFREY F ,  BAUM THOMAS H ,  PETRUSKA MELISSA A ,  STENDER MATTHIAS ,  CHEN PHILIP S H ,  STAUF GREGORY T ,  HENDRIX BRYAN C

IPC: C23C16/00 ,  H01L21/20 ,  H01L31/20

CPC classification number: H01L45/1616 ,  C07C251/08 ,  C07F7/003 ,  C07F7/10 ,  C07F7/28 ,  C07F9/902 ,  C07F9/904 ,  C07F17/00 ,  C23C16/18 ,  C23C16/305 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/144 ,  H01L45/1683

Abstract: Antimony, germanium and tellurium precursors useful for CVD/ALD of corresponding metal-containing thin films are described, along with compositions including such precursors, methods of making such precursors, and films and microelectronic device products manufactured using such precursors, as well as corresponding manufacturing methods. The precursors of the invention are useful for forming germanium-antimony-tellurium (GST) films and microelectronic device products, such as phase change memory devices, including such films.

Abstract translation: 描述了可用于相应的含金属薄膜的CVD / ALD的锑，锗和碲前体，以及包含这些前体的组合物，制备这种前体的方法，以及使用这种前体制备的膜和微电子器件产品，以及相应的制造 方法。 本发明的前体可用于形成锗 - 锑 - 碲（GST）膜和微电子器件产品，例如包括这种膜的相变存储器件。

公开(公告)号：WO2012129454A2

公开(公告)日：2012-09-27

申请号：PCT/US2012030214

申请日：2012-03-22

Applicant: ADVANCED TECH MATERIALS ,  BYL OLEG ,  XU CHONGYING ,  HUNKS WILLIAM ,  RAY RICHARD S

Inventor： BYL OLEG ,  XU CHONGYING ,  HUNKS WILLIAM ,  RAY RICHARD S

IPC: H01L21/265

CPC classification number: H01L21/265 ,  H01J37/3171 ,  H01J2237/08 ,  H01L21/26513 ,  H01L21/26566

Abstract: An ion implantation method, in which a dopant source composition is ionized to form dopant ions, and the dopant ions are implanted in a substrate. The dopant source composition includes cluster phosphorus or cluster arsenic compounds, for achieving P- and/or As-doping, in the production of doped articles of manufacture, e.g., silicon wafers or precursor structures for manufacturing microelectronic devices.

Abstract translation: 一种离子注入方法，其中掺杂剂源组合物被离子化以形成掺杂剂离子，并且掺杂剂离子注入到衬底中。 掺杂剂源组合物包括聚磷或聚集砷化合物，用于在制造掺杂制品例如硅晶片或用于制造微电子器件的前体结构的生产中实现P-和/或As掺杂。

公开(公告)号：WO2007133837A3

公开(公告)日：2008-03-13

申请号：PCT/US2007063832

申请日：2007-03-12

Applicant: ADVANCED TECH MATERIALS ,  ROEDER JEFFREY F ,  BAUM THOMAS H ,  HENDRIX BRYAN C ,  STAUF GREGORY T ,  XU CHONGYING ,  HUNKS WILLIAM ,  CHEN TIANNIU ,  STENDER MATTHIAS

Inventor： ROEDER JEFFREY F ,  BAUM THOMAS H ,  HENDRIX BRYAN C ,  STAUF GREGORY T ,  XU CHONGYING ,  HUNKS WILLIAM ,  CHEN TIANNIU ,  STENDER MATTHIAS

IPC: G11C11/00

CPC classification number: H01L51/0002 ,  C07F7/30 ,  C23C16/305 ,  C23C16/45553

Abstract: A system and method for forming a phase change memory material on a substrate, in which the substrate is contacted with precursors for a phase change memory chalcogenide alloy under conditions producing deposition of the chalcogenide alloy on the substrate, at temperature below 350°C, with the contacting being carried out via chemical vapor deposition or atomic layer deposition. Various tellurium, germanium and germanium-tellurium precursors are described, which are useful for forming GST phase change memory films on substrates.

Abstract translation: 一种用于在基板上形成相变记忆材料的系统和方法，其中，在温度低于350℃的条件下，在产生硫属化物合金沉积的条件下，在温度低于350℃的条件下，基板与相变存储器硫族化合物的前体接触， 通过化学气相沉积或原子层沉积进行接触。 描述了各种碲，锗和锗 - 碲前体，其可用于在基底上形成GST相变记忆膜。

公开(公告)号：SG152203A1

公开(公告)日：2009-05-29

申请号：SG2008080699

申请日：2008-10-30

Applicant: ADVANCED TECH MATERIALS

Inventor： CHEN PHILIP S H ,  HUNKS WILLIAM ,  CHEN TIANNIU ,  STENDER MATTHIAS ,  XU CHONGYING ,  ROEDER JEFFREY F ,  LI WEIMIN

Abstract: Germanium, tellurium, and/or antimony precursors are usefully employed to form germanium-, tellurium- and/or antimony-containing films, such as films of GeTe, GST, and thermoelectric germanium-containing films. Processes for using these precursors to form amorphous films are also described. Further described is the use of [{nBuC(iPrN)2)2Ge] or Ge butyl amidinate to form GeTe smooth amorphous films for phase change memory applications. Figure 13