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    DOPING OF ZRO2 FOR DRAM APPLICATIONS
    1.
    发明申请
    DOPING OF ZRO2 FOR DRAM APPLICATIONS 审中-公开
    用于DRAM应用的ZRO2掺杂

    公开(公告)号：WO2012005957A2

    公开(公告)日：2012-01-12

    申请号：PCT/US2011041545

    申请日：2011-06-23

    Applicant: ADVANCED TECH MATERIALS ,  CISSELL JULIE ,  XU CHONGYING ,  CAMERON THOMAS M ,  HUNKS WILLIAM

    Inventor： CISSELL JULIE ,  XU CHONGYING ,  CAMERON THOMAS M ,  HUNKS WILLIAM

    IPC: H01L21/314 ,  H01L21/205 ,  H01L21/8242 ,  H01L27/108

    CPC classification number: H01L28/40 ,  C23C16/45525 ,  H01L21/02189 ,  H01L21/02194 ,  H01L21/0228

    Abstract: A method of forming a dielectric material, comprising doping a zirconium oxide material, using a dopant precursor selected from the group consisting of Ti(NMe2)4; Ti(NMeEt)4; Ti(NEt2)4; TiCl4; tBuN=Nb(NEt2)3; tBuN=Nb(NMe2)3; t-BuN=Nb(NEtMe)3; t- AmN=Nb(NEt2)3; t-AmN=Nb(NEtMe)3; t-AmN=Nb(NMe2)3; t-AmN=Nb(OBu-t)3; Nb-13; Nb(NEt2)4; Nb(NEt2)5; Nb(N(CH3)2)5; Nb(OC2H5)5; Nb(thd)(OPr-i)4; SiH(OMe)3; SiCU; Si(NMe2)4; (Me3Si)2NH; GeRax(ORb)4.x wherein x is from 0 to 4, each Ra is independently selected from H or C1-C8 alkyl and each Rb is independently selected from C1-C8 alkyl; GeCl4; Ge(NRa 2)4 wherein each Ra is independently selected from H and C1-C8 alkyl; and (Rb 3Ge)2NH wherein each Rb is independently selected from C1-C8 alkyl; bis(N,N'-diisopropyl-1,3-propanediamide) titanium; and tetrakis(isopropylmethylamido) titanium; wherein Me is methyl, Et is ethyl, Pr-i is isopropyl, t-Bu is tertiary butyl, t-Am is tertiary amyl, and thd is 2,2,6,6-tetramethyl-3,5-heptanedionate. Doped zirconium oxide materials of the present disclosure are usefully employed in ferroelectric capacitors and dynamic random access memory (DRAM) devices.

    Abstract translation: 一种形成电介质材料的方法，包括使用选自Ti（NMe 2）4的掺杂剂前体掺杂氧化锆材料; 的Ti（NMeEt）4; 的Ti（NET2）4; 四氯化钛; tBuN =铌（NET2）3; tBuN =铌（NME2）3; 叔BUN =铌（NEtMe）3; t-AmN = Nb（NEt2）3; 叔AMN =铌（NEtMe）3; 叔AMN =铌（NME2）3; 叔AMN =铌（OBU-T）3; NB-13; 铌（NET2）4; 铌（NET2）5; 铌（N（CH3）2）5; 的Nb（OC2H5）5; 铌（THD）（OPR-i）的4; 的SiH（OME）3; 的SiCl 4; 的Si（NME2）4; （Me3Si）2 NH; GeRax（ORb）4.x其中x为0至4，每个R a独立地选自H或C 1 -C 8烷基，并且每个R b独立地选自C 1 -C 8烷基; GeCl4; Ge（NRa 2）4，其中每个R a独立地选自H和C 1 -C 8烷基; 和（R b 3Ge）2 NH，其中每个R b独立地选自C 1 -C 8烷基; 双（N，N'-二异丙基-1,3-丙二酰胺）钛; 和四（异丙基甲基氨基）钛; 其中Me是甲基，Et是乙基，Pr-i是异丙基，t-Bu是叔丁基，t-Am是叔戊基，thd是2,2,6,6-四甲基-3,5-庚二酮酸。 本公开的掺杂氧化锆材料有用地用于铁电电容器和动态随机存取存储器（DRAM）器件中。

    PRECURSOR COMPOSITIONS FOR ALD/CVD OF GROUP II RUTHENATE THIN FILMS
    2.
    发明申请
    PRECURSOR COMPOSITIONS FOR ALD/CVD OF GROUP II RUTHENATE THIN FILMS 审中-公开
    用于II组RUTHENATE薄膜的ALD / CVD的前体组合物

    公开(公告)号：WO2008088563A3

    公开(公告)日：2009-04-09

    申请号：PCT/US2007063831

    申请日：2007-03-12

    Applicant: ADVANCED TECH MATERIALS ,  XU CHONGYING ,  HENDRIX BRYAN C ,  CAMERON THOMAS M ,  ROEDER JEFFREY F ,  STENDER MATTHIAS ,  CHEN TIANNIU

    Inventor： XU CHONGYING ,  HENDRIX BRYAN C ,  CAMERON THOMAS M ,  ROEDER JEFFREY F ,  STENDER MATTHIAS ,  CHEN TIANNIU

    IPC: H01L21/44 ,  H01L21/3205 ,  H01L21/321 ,  H01L21/365 ,  H01L21/441

    CPC classification number: C07F17/02

    Abstract: Precursor compositions useful for atomic layer deposition (ALD) and chemical vapor deposition (CVD) of strontium ruthenium oxide (SrRuO3) thin films, e.g., in the manufacture of microelectronic devices, as well as processes of making and using such precursors, and precursor supply systems containing such precursor compositions in packaged form. Cyclopentadienyl compounds of varied type are described, including cyclopentadienyl as well as non cyclopentadienyl ligands coordinated to ruthenium, strontium or barium central atoms. The precursors of the invention are useful for forming contacts for microelectronic memory device structures, and in a specific aspect for selectively coating copper metallization without deposition on associated dielectric, under deposition conditions in a forming gas ambient.

    Abstract translation: 用于原子层沉积（ALD）和氧化钌氧化物（SrRuO 3）薄膜的化学气相沉积（CVD）的前体组合物，例如在微电子器件的制造中，以及制备和使用这些前体的方法以及前体供应 含有包装形式的前体组合物的体系。 描述了不同类型的环戊二烯基化合物，包括环戊二烯基以及与钌，锶或钡中心原子配位的非环戊二烯基配位体。 本发明的前体可用于形成用于微电子存储器件结构的接触，并且在特定方面，用于在形成气体环境中的沉积条件下，在相关联的电介质上不沉积而选择性地涂覆铜金属化。

    PRECURSOR COMPOSITIONS FOR ATOMIC LAYER DEPOSITION AND CHEMICAL VAPOR DEPOSITION OF TITANATE, LANTHANATE, AND TANTALATE DIELECTRIC FILMS
    3.
    发明申请
    PRECURSOR COMPOSITIONS FOR ATOMIC LAYER DEPOSITION AND CHEMICAL VAPOR DEPOSITION OF TITANATE, LANTHANATE, AND TANTALATE DIELECTRIC FILMS 审中-公开
    用于原子层沉积和钛酸盐，钛酸盐和钛酸盐电介质膜的化学气相沉积的前体组合物

    公开(公告)号：WO2007106788A3

    公开(公告)日：2007-12-13

    申请号：PCT/US2007063825

    申请日：2007-03-12

    Applicant: ADVANCED TECH MATERIALS ,  XU CHONGYING ,  CHEN TIANNIU ,  CAMERON THOMAS M ,  ROEDER JEFFREY F ,  BAUM THOMAS H

    Inventor： XU CHONGYING ,  CHEN TIANNIU ,  CAMERON THOMAS M ,  ROEDER JEFFREY F ,  BAUM THOMAS H

    IPC: H01L21/31 ,  H01L21/469

    CPC classification number: C23C14/088 ,  C07F17/00 ,  C23C16/409 ,  C23C16/45553

    Abstract: Barium, strontium, tantalum and lanthanum precursor compositions useful for atomic layer deposition (ALD) and chemical vapor deposition (CVD) of titanate thin films. The precursors have the formula M(Cp) 2 , wherein M is strontium, barium, tantalum or lanthanum, and Cp is cyclopentadienyl, of the formula (I), wherein each of R 1 -R 5 is the same as or different from one another, with each being independently selected from among hydrogen, C 1 -C 12 alkyl, C 1 -C 12 amino, C 6 -C 10 aryl, C 1 -C 12 alkoxy, C 3 -C 6 alkylsilyl, C 2 -C 12 alkenyl, R 1 R 2 R 3 NNR 3 , wherein R 1 , R 2 and R 3 may be the same as or different from one another and each is independently selected from hydrogen and C 1 -C 6 alkyl, and pendant ligands including functional group(s) providing further coordination to the metal center M. The precursors of the above formula are useful to achieve uniform coating of high dielectric constant materials in the manufacture of flash memory and other microelectronic devices.

    Abstract translation: 用于钛酸盐薄膜的原子层沉积（ALD）和化学气相沉积（CVD）的钡，锶，钽和镧前体组合物。 前体具有式（I）的式M（Cp）2 N，其中M是锶，钡，钽或镧，Cp是环戊二烯基，其中R 1， 其中各自独立地选自氢，C 1 -C 12 - / - C 1 -C 12烷基，C 1 -C 12氨基，C 6 -C 10芳基，C 1 C 12 -C 12烷氧基，C 3 -C 6烷基甲硅烷基，C 2-C≡S > 12个烯基，R 1，R 2，R 3，R 3，R 3，R 3，R 3， R 1，R 2和R 3可以彼此相同或不同，并且各自独立地选自氢和C 1〜 并且包括提供与金属中心M进一步配位的官能团的侧链配体。上式的前体可用于实现高介电常数材料的均匀涂覆 男人 制造闪存等微电子器件。

    METHOD AND COMPOSITION FOR DEPOSITING RUTHENIUM WITH ASSISTIVE METAL SPECIES
    4.
    发明专利
    METHOD AND COMPOSITION FOR DEPOSITING RUTHENIUM WITH ASSISTIVE METAL SPECIES 未知

    公开(公告)号：SG174423A1

    公开(公告)日：2011-10-28

    申请号：SG2011066719

    申请日：2010-03-17

    Applicant: ADVANCED TECH MATERIALS

    Inventor： LUBGUBAN JORGE A JR ,  CAMERON THOMAS M ,  XU CHONGYING ,  LI WEIMIN

    Abstract: A method of forming a ruthenium-containing film in a vapor deposition process, including depositing ruthenium with an assistive metal species that increases the rate and extent of ruthenium deposition in relation to deposition of ruthenium in the absence of such assistive metal species. An illustrative precursor composition useful for carrying out such method includes a ruthenium precursor and a strontium precursor in a solvent medium, wherein one of the ruthenium and strontium precursors includes a pendant functionality that coordinates with the central metal atom of the other precursor, so that ruthenium and strontium co-deposit with one another. The method permits incubation time for ruthenium deposition on non-metallic substrates to be very short, thereby accommodating very rapid film formation in processes such as atomic layer deposition.

    METHOD AND COMPOSITION FOR DEPOSITING RUTHENIUM WITH ASSISTIVE METAL SPECIES
    6.
    发明申请
    METHOD AND COMPOSITION FOR DEPOSITING RUTHENIUM WITH ASSISTIVE METAL SPECIES 审中-公开
    用辅助金属物种沉积金属的方法和组合物

    公开(公告)号：WO2010107878A3

    公开(公告)日：2011-01-20

    申请号：PCT/US2010027614

    申请日：2010-03-17

    Applicant: ADVANCED TECH MATERIALS ,  LUBGUBAN JORGE A JR ,  CAMERON THOMAS M ,  XU CHONGYING ,  LI WEIMIN

    Inventor： LUBGUBAN JORGE A JR ,  CAMERON THOMAS M ,  XU CHONGYING ,  LI WEIMIN

    IPC: H01L21/205 ,  H01L21/8242 ,  H01L27/108

    CPC classification number: C23C16/0272 ,  C23C16/18 ,  C23C16/45534 ,  H01L28/65

    Abstract: A method of forming a ruthenium-containing film in a vapor deposition process, including depositing ruthenium with an assistive metal species that increases the rate and extent of ruthenium deposition in relation to deposition of ruthenium in the absence of such assistive metal species. An illustrative precursor composition useful for carrying out such method includes a ruthenium precursor and a strontium precursor in a solvent medium, wherein one of the ruthenium and strontium precursors includes a pendant functionality that coordinates with the central metal atom of the other precursor, so that ruthenium and strontium co-deposit with one another. The method permits incubation time for ruthenium deposition on non-metallic substrates to be very short, thereby accommodating very rapid film formation in processes such as atomic layer deposition.

    Abstract translation: 一种在气相沉积工艺中形成含钌膜的方法，包括用辅助金属物质沉积钌，其在不存在这种辅助金属物质的情况下相对于沉积钌而增加钌沉积的速率和程度。 用于实施这种方法的说明性前体组合物包括在溶剂介质中的钌前体和锶前体，其中钌和锶前体之一包括与另一前体的中心金属原子配位的侧链官能团，使得钌 和锶共沉积。 该方法允许在非金属基底上钌沉积的孵育时间非常短，从而在诸如原子层沉积的过程中容纳非常快速的成膜。

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