公开(公告)号：WO2008057616A3

公开(公告)日：2009-04-09

申请号：PCT/US2007063830

申请日：2007-03-12

Applicant: ADVANCED TECH MATERIALS ,  HUNKS WILLIAM ,  CHEN TIANNIU ,  XU CHONGYING ,  ROEDER JEFFREY F ,  BAUM THOMAS H ,  PETRUSKA MELISSA A ,  STENDER MATTHIAS ,  CHEN PHILIP S H ,  STAUF GREGORY T ,  HENDRIX BRYAN C

Inventor： HUNKS WILLIAM ,  CHEN TIANNIU ,  XU CHONGYING ,  ROEDER JEFFREY F ,  BAUM THOMAS H ,  PETRUSKA MELISSA A ,  STENDER MATTHIAS ,  CHEN PHILIP S H ,  STAUF GREGORY T ,  HENDRIX BRYAN C

IPC: C23C16/00 ,  H01L21/20 ,  H01L31/20

CPC classification number: H01L45/1616 ,  C07C251/08 ,  C07F7/003 ,  C07F7/10 ,  C07F7/28 ,  C07F9/902 ,  C07F9/904 ,  C07F17/00 ,  C23C16/18 ,  C23C16/305 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/144 ,  H01L45/1683

Abstract: Antimony, germanium and tellurium precursors useful for CVD/ALD of corresponding metal-containing thin films are described, along with compositions including such precursors, methods of making such precursors, and films and microelectronic device products manufactured using such precursors, as well as corresponding manufacturing methods. The precursors of the invention are useful for forming germanium-antimony-tellurium (GST) films and microelectronic device products, such as phase change memory devices, including such films.

Abstract translation: 描述了可用于相应的含金属薄膜的CVD / ALD的锑，锗和碲前体，以及包含这些前体的组合物，制备这种前体的方法，以及使用这种前体制备的膜和微电子器件产品，以及相应的制造 方法。 本发明的前体可用于形成锗 - 锑 - 碲（GST）膜和微电子器件产品，例如包括这种膜的相变存储器件。

公开(公告)号：WO2008088563A3

公开(公告)日：2009-04-09

申请号：PCT/US2007063831

申请日：2007-03-12

Applicant: ADVANCED TECH MATERIALS ,  XU CHONGYING ,  HENDRIX BRYAN C ,  CAMERON THOMAS M ,  ROEDER JEFFREY F ,  STENDER MATTHIAS ,  CHEN TIANNIU

Inventor： XU CHONGYING ,  HENDRIX BRYAN C ,  CAMERON THOMAS M ,  ROEDER JEFFREY F ,  STENDER MATTHIAS ,  CHEN TIANNIU

IPC: H01L21/44 ,  H01L21/3205 ,  H01L21/321 ,  H01L21/365 ,  H01L21/441

CPC classification number: C07F17/02

Abstract: Precursor compositions useful for atomic layer deposition (ALD) and chemical vapor deposition (CVD) of strontium ruthenium oxide (SrRuO3) thin films, e.g., in the manufacture of microelectronic devices, as well as processes of making and using such precursors, and precursor supply systems containing such precursor compositions in packaged form. Cyclopentadienyl compounds of varied type are described, including cyclopentadienyl as well as non cyclopentadienyl ligands coordinated to ruthenium, strontium or barium central atoms. The precursors of the invention are useful for forming contacts for microelectronic memory device structures, and in a specific aspect for selectively coating copper metallization without deposition on associated dielectric, under deposition conditions in a forming gas ambient.

Abstract translation: 用于原子层沉积（ALD）和氧化钌氧化物（SrRuO 3）薄膜的化学气相沉积（CVD）的前体组合物，例如在微电子器件的制造中，以及制备和使用这些前体的方法以及前体供应 含有包装形式的前体组合物的体系。 描述了不同类型的环戊二烯基化合物，包括环戊二烯基以及与钌，锶或钡中心原子配位的非环戊二烯基配位体。 本发明的前体可用于形成用于微电子存储器件结构的接触，并且在特定方面，用于在形成气体环境中的沉积条件下，在相关联的电介质上不沉积而选择性地涂覆铜金属化。

公开(公告)号：WO2007133837A3

公开(公告)日：2008-03-13

申请号：PCT/US2007063832

申请日：2007-03-12

Applicant: ADVANCED TECH MATERIALS ,  ROEDER JEFFREY F ,  BAUM THOMAS H ,  HENDRIX BRYAN C ,  STAUF GREGORY T ,  XU CHONGYING ,  HUNKS WILLIAM ,  CHEN TIANNIU ,  STENDER MATTHIAS

Inventor： ROEDER JEFFREY F ,  BAUM THOMAS H ,  HENDRIX BRYAN C ,  STAUF GREGORY T ,  XU CHONGYING ,  HUNKS WILLIAM ,  CHEN TIANNIU ,  STENDER MATTHIAS

IPC: G11C11/00

CPC classification number: H01L51/0002 ,  C07F7/30 ,  C23C16/305 ,  C23C16/45553

Abstract: A system and method for forming a phase change memory material on a substrate, in which the substrate is contacted with precursors for a phase change memory chalcogenide alloy under conditions producing deposition of the chalcogenide alloy on the substrate, at temperature below 350°C, with the contacting being carried out via chemical vapor deposition or atomic layer deposition. Various tellurium, germanium and germanium-tellurium precursors are described, which are useful for forming GST phase change memory films on substrates.

Abstract translation: 一种用于在基板上形成相变记忆材料的系统和方法，其中，在温度低于350℃的条件下，在产生硫属化物合金沉积的条件下，在温度低于350℃的条件下，基板与相变存储器硫族化合物的前体接触， 通过化学气相沉积或原子层沉积进行接触。 描述了各种碲，锗和锗 - 碲前体，其可用于在基底上形成GST相变记忆膜。

公开(公告)号：WO2008057616A8

公开(公告)日：2010-03-18

申请号：PCT/US2007063830

申请日：2007-03-12

Applicant: ADVANCED TECH MATERIALS ,  HUNKS WILLIAM ,  CHEN TIANNIU ,  XU CHONGYING ,  ROEDER JEFFREY F ,  BAUM THOMAS H ,  PETRUSKA MELISSA A ,  STENDER MATTHIAS ,  CHEN PHILIP S H ,  STAUF GREGORY T ,  HENDRIX BRYAN C

Inventor： HUNKS WILLIAM ,  CHEN TIANNIU ,  XU CHONGYING ,  ROEDER JEFFREY F ,  BAUM THOMAS H ,  PETRUSKA MELISSA A ,  STENDER MATTHIAS ,  CHEN PHILIP S H ,  STAUF GREGORY T ,  HENDRIX BRYAN C

IPC: C23C16/00 ,  H01L21/20 ,  H01L31/20

CPC classification number: H01L45/1616 ,  C07C251/08 ,  C07F7/003 ,  C07F7/10 ,  C07F7/28 ,  C07F9/902 ,  C07F9/904 ,  C07F17/00 ,  C23C16/18 ,  C23C16/305 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/144 ,  H01L45/1683

Abstract: Antimony, germanium and tellurium precursors useful for CVD/ALD of corresponding metal-containing thin films are described, along with compositions including such precursors, methods of making such precursors, and films and microelectronic device products manufactured using such precursors, as well as corresponding manufacturing methods. The precursors of the invention are useful for forming germanium-antimony-tellurium (GST) films and microelectronic device products, such as phase change memory devices, including such films.

Abstract translation: 描述了可用于相应的含金属薄膜的CVD / ALD的锑，锗和碲前体，以及包含这些前体的组合物，制备这种前体的方法，以及使用这种前体制备的膜和微电子器件产品，以及相应的制造 方法。 本发明的前体可用于形成锗 - 锑 - 碲（GST）膜和微电子器件产品，例如包括这种膜的相变存储器件。

公开(公告)号：WO2009059237A3

公开(公告)日：2009-09-24

申请号：PCT/US2008082134

申请日：2008-10-31

Applicant: ADVANCED TECH MATERIALS ,  CHEN TIANNIU ,  XU CHONGYING ,  HENDRIX BRYAN C ,  HUNKS WILLIAM ,  CAMERON THOMAS M ,  STENDER MATTHIAS ,  STAUF GREGORY T ,  ROEDER JEFFREY F

Inventor： CHEN TIANNIU ,  XU CHONGYING ,  HENDRIX BRYAN C ,  HUNKS WILLIAM ,  CAMERON THOMAS M ,  STENDER MATTHIAS ,  STAUF GREGORY T ,  ROEDER JEFFREY F

IPC: C07F9/94

CPC classification number: C07F9/94

Abstract: Bismuth precursors having utility for forming highly conformal bismuth-containing films by low temperature (

Abstract translation: 具有用于通过低温（<300℃）气相沉积方法如CVD和ALD形成高保形含铋膜的铋前体，包括氨基铋，胍铋酸盐，异钌酸铋，氨基甲酸铋和硫代氨基甲酸铋，β-二酮铋酸铋 铋铋，二酮铋，铋铋，铋基铋，烷氧基铋，铋配合物，铋甲硅烷基酰胺，铋螯合酰胺和铋二碲酰亚胺二磷酸铋。 还描述了制备这种前体的方法，以及适用于制造微电子器件产品的这种前体的包装形式。 这些铋前体有利地用于形成含铋的膜，例如GBT，Bi2Te3，Bi4Ti3O12，SrBi2Ta2O9，Bi-Ta-O，BiP和含热电铋膜的膜。

公开(公告)号：SG176449A1

公开(公告)日：2011-12-29

申请号：SG2011080819

申请日：2007-03-12

Applicant: ADVANCED TECH MATERIALS

Inventor： HUNKS WILLIAM ,  CHEN TIANNIU ,  XU CHONGYING ,  ROEDER JEFFREY F ,  BAUM THOMAS H ,  PETRUSKA MELISSA A ,  STENDER MATTHIAS ,  CHEN PHILIP S H ,  STAUF GREGORY T ,  HENDRIX BRYAN C

Abstract: ANTIMONY AND GERMANIUM COMPLEXES USEFUL FOR CVD/ALD OF METAL THIN FILMSAbstractAntimony, germanium and tellurium precursors useful for CVD/ALD of corresponding metal-containing thin films are described, along with compositions including such precursors, methods of making such precursors, and films and microelectronic device products manufactured using such precursors, as well as corresponding manufacturing methods. The precursors of the invention are useful for forming germanium-antimony tellurium (GST) films and microelectronic device products, such as phase change memory devices, including such filmsFigure 1

公开(公告)号：SG152203A1

公开(公告)日：2009-05-29

申请号：SG2008080699

申请日：2008-10-30

Applicant: ADVANCED TECH MATERIALS

Inventor： CHEN PHILIP S H ,  HUNKS WILLIAM ,  CHEN TIANNIU ,  STENDER MATTHIAS ,  XU CHONGYING ,  ROEDER JEFFREY F ,  LI WEIMIN

Abstract: Germanium, tellurium, and/or antimony precursors are usefully employed to form germanium-, tellurium- and/or antimony-containing films, such as films of GeTe, GST, and thermoelectric germanium-containing films. Processes for using these precursors to form amorphous films are also described. Further described is the use of [{nBuC(iPrN)2)2Ge] or Ge butyl amidinate to form GeTe smooth amorphous films for phase change memory applications. Figure 13

公开(公告)号：SG171683A1

公开(公告)日：2011-06-29

申请号：SG2011033982

申请日：2007-03-12

Applicant: ADVANCED TECH MATERIALS

Inventor： ROEDER JEFFREY F ,  BAUM THOMAS H ,  HENDRIX BRYAN C ,  STAUF GREGORY T ,  XU CHONGYING ,  HUNKS WILLIAM ,  CHEN TIANNIU ,  STENDER MATTHIAS

Abstract: A system and method for forming a phase change memory material on a substrate, in which the substrate is contacted with precursors for a phase change memory chalcogenide alloy under conditions producing deposition of the chalcogenide alloy on the substrate, at temperature below 350 degree C, with the contacting being carried out via chemical vapor deposition or atomic layer deposition. Various tellurium, germanium and germanium-tellurium precursors are described, which are useful for forming GST phase change memory films on substrates.

公开(公告)号：EP2018642A4

公开(公告)日：2009-05-27

申请号：EP07758385

申请日：2007-03-12

Applicant: ADVANCED TECH MATERIALS

Inventor： ROEDER JEFFREY F ,  BAUM THOMAS H ,  HENDRIX BRYAN C ,  STAUF GREGORY T ,  XU CHONGYING ,  HUNKS WILLIAM ,  CHEN TIANNIU ,  STENDER MATTHIAS

IPC: G11C11/00 ,  C23C16/30

CPC classification number: H01L51/0002 ,  C07F7/30 ,  C23C16/305 ,  C23C16/45553

Abstract: A system and method for forming a phase change memory material on a substrate, in which the substrate is contacted with precursors for a phase change memory chalcogenide alloy under conditions producing deposition of the chalcogenide alloy on the substrate, at temperature below 350°C, with the contacting being carried out via chemical vapor deposition or atomic layer deposition. Various tellurium, germanium and germanium-tellurium precursors are described, which are useful for forming GST phase change memory films on substrates.

公开(公告)号：EP2078102A4

公开(公告)日：2010-11-24

申请号：EP07758383

申请日：2007-03-12

Applicant: ADVANCED TECH MATERIALS

Inventor： HUNKS WILLIAM ,  CHEN TIANNIU ,  XU CHONGYING ,  ROEDER JEFFREY F ,  BAUM THOMAS H ,  STENDER MATTHIAS ,  CHEN PHILIP S H ,  STAUF GREGORY T ,  HENDRIX BRYAN C

IPC: C07F7/30 ,  C23C16/22 ,  H01L45/00

CPC classification number: H01L45/1616 ,  C07C251/08 ,  C07F7/003 ,  C07F7/10 ,  C07F7/28 ,  C07F9/902 ,  C07F9/904 ,  C07F17/00 ,  C23C16/18 ,  C23C16/305 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/144 ,  H01L45/1683