公开(公告)号：JPH11150079A

公开(公告)日：1999-06-02

申请号：JP31488697

申请日：1997-11-17

Applicant: AGENCY IND SCIENCE TECHN

Inventor： ARAI KAZUO ,  YOSHIDA SADAJI ,  TAGAMI HISAO ,  TANAKA YASUNORI ,  OKUMURA HAJIME

IPC: H01J37/317 ,  H01L21/265

Abstract: PROBLEM TO BE SOLVED: To implant ions at high doping ion flux, by allowing doping ions which cause electrical activity to be pulse a for ion implantation. SOLUTION: Pulse-like ion species generated by laser application, etc., are classified and accelerated for common ion implantation source together with doping pulse ion source. Timing is adjusted between implantation temperature and ion flux as well as state control pulse flux and doping ion pulse, for optimizing. Further, a pulse ion implantation and irradiation of excited control pulse train are coupled. Further, micro implantation condition control is performed for the doping ion, allowing optimum control of a dopant in electrical activity.