Abstract:
본 발명은 EUVL용 노광 장치의 광학 부재로서 적합한, 고EUV 에너지 광으로 조사시 선열팽창 계수가 거의 0이 되는 TiO 2 -SiO 2 유리를 제공한다. 본 발명은 할로겐 함유량이 100 ppm 이상이고; 가상 온도가 1,100℃ 이하이고; 20 내지 100℃의 범위의 평균 선열팽창 계수가 30 ppb/℃ 이하이고; 선열팽창 계수가 0±5 ppb/℃가 되는 온도 폭 △T가 5℃ 이상이고; 선열팽창 계수가 0 ppb/℃가 되는 온도가 30 내지 150℃의 범위 내에 있는 TiO 2 함유 실리카 유리에 관한 것이다.
Abstract:
Conventional TiO 2 -SiO 2 glass contains hydrogen atoms substantially and during deposition under ultrahigh vacuum condition, the hydrogen molecules will diffuse in the chamber, and H 2 molecules will be taken into a film thereby formed. Hydrogen molecules will readily diffuse and the optical characteristics of the multilayer film are likely to be thereby changed. An optical material for EUV lithography is disclosed, which comprises a silica glass having a TiO 2 concentration of from 3 to 12 mass% and a hydrogen molecule content of less than 5x10* molecules/cm 3 in the glass.
Abstract:
An exposure apparatus, wherein at least one of optical members constituting an exposure light source system, an illuminating optical system, a photomask and a projection optical system, is made of a synthetic quartz glass for an optical member, which has an absorption coefficient of 0.70 cm or less at a wavelength of 157 nm and an infrared absorption peak attributable to SiOH stretching vibration at about 3640 cm .
Abstract:
An exposure apparatus, wherein at least one of optical members constituting an exposure light source system, an illuminating optical system, a photomask and a projection optical system, is made of a synthetic quartz glass for an optical member, which has an absorption coefficient of 0.70 cm or less at a wavelength of 157 nm and an infrared absorption peak attributable to SiOH stretching vibration at about 3640 cm .
Abstract:
It is characterized by having a pellicle sheet made of a synthetic quartz glass having an OH group concentration of at most 100 ppm and containing substantially no oxygen deficient defect. It is particularly preferred that the OH group concentration is at most 10 ppm, and the internal transmittance is at least 80 %/cm at a wavelength of 157 nm.
Abstract:
The membrane device has a peripheral quartz glass membrane frame (3) with upper and lower openings and a membrane sheet (4) attached to the membrane frame, for covering one of these openings. The frame has a number of gas openings (1) spaced along 2 opposing sides, having a size which is 3/5 the height of the membrane frame or less.
Abstract:
Silicon carbide having a resistivity of from 10 to 10 OMEGA .cm and a powder X-ray diffraction peak intensity ratio of at least 0.005 as represented by Id1/Id2 where Id1 is the peak intensity in the vicinity of 2&thetas; being 34 DEG and Id2 is the peak intensity in the vicinity of 2&thetas; being 36 DEG .