公开(公告)号：WO2004049432A2

公开(公告)日：2004-06-10

申请号：PCT/US2003/040061

申请日：2003-11-21

Applicant: ASM AMERICA, INC. ,  ASM INTERNATIONAL N.V.

Inventor： RAAIJMAKERS, Ivo ,  SOININEN, Pekka, J. ,  GRANNEMAN, Ernst ,  HAUKKA, Suvi ,  ELERS, Kai-Erik ,  TUOMINEN, Marco ,  SPREY, Hessel ,  TERHORST, Herbert ,  HENDRIKS, Menso

IPC: H01L23/00

CPC classification number: H01L21/76843 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/7681 ,  H01L21/76814 ,  H01L21/7682 ,  H01L21/76825 ,  H01L21/76828 ,  H01L21/76831 ,  H01L21/76844 ,  H01L21/76864 ,  H01L21/76873 ,  H01L23/5226 ,  H01L23/53238 ,  H01L2221/1047 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Method and structures are provided for conformal lining of dual damascene structures in integrated circuits, and particularly of openings formed in porous materials. Trenches and contact vias are formed in insulating layers. The pores on the sidewalls of the trenches and vias are blocked, and then the structure is exposed to alternating chemistries to form monolayers of a desired lining material. In exemplary process flows chemical or physical vapor deposition (CVD or PVD) of a sealing layer blocks the pores due to imperfect conformality. An alternating process can also be arranged by selection of pulse separation and/or pulse duration to achieve reduced conformality relative to a self-saturating, self-limiting atomic layer deposition (ALD) process. In still another arrangement, layers with anisotropic pore structures can be sealed by selectively melting upper surfaces. Blocking is followed by a self-limiting, self-saturating atomic layer deposition (ALD) reactions without significantly filling the pores.

Abstract translation: 提供了用于集成电路中的双镶嵌结构的保形衬里的方法和结构，并且尤其提供了在多孔材料中形成的开口。 沟槽和接触过孔在绝缘层中形成。 沟槽和通孔侧壁上的孔被阻塞，然后该结构暴露于交替化学反应以形成所需衬里材料的单层。 在示例性工艺流程中，由于不完全的共形性，密封层的化学或物理气相沉积（CVD或PVD）阻塞孔隙。 也可以通过选择脉冲间隔和/或脉冲持续时间来安排交替工艺，以相对于自饱和自限原子层沉积（ALD）工艺实现降低的共形性。 在又一种布置中，具有各向异性孔结构的层可通过选择性地熔化上表面来密封。 封闭之后是自我限制的自饱和原子层沉积（ALD）反应，没有显着填充孔。

公开(公告)号：WO2006091510A1

公开(公告)日：2006-08-31

申请号：PCT/US2006/005868

申请日：2006-02-21

Applicant: ASM AMERICA, INC. ,  KUMAR, Davendra ,  GOUNDAR, Kamal, Kishore ,  KEMELING, Nathanael, R.C. ,  FUKUDA, Hideaki ,  SPREY, Hessel ,  STOKHOF, Maarten

Inventor： KUMAR, Davendra ,  GOUNDAR, Kamal, Kishore ,  KEMELING, Nathanael, R.C. ,  FUKUDA, Hideaki ,  SPREY, Hessel ,  STOKHOF, Maarten

IPC: H01L21/768 ,  H01L21/285

CPC classification number: H01L21/02063 ,  C23C14/02 ,  C23C16/02 ,  C23C16/36 ,  C23C16/45525 ,  C23C16/45531 ,  H01L21/28562 ,  H01L21/3105 ,  H01L21/76807 ,  H01L21/7681 ,  H01L21/76826 ,  H01L21/76831 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76873

Abstract: Method and structures are provided for conformal lining of dual damascene structures in integrated circuits. Preferred embodiments are directed to providing conformal lining over openings formed in porous materials. Trenches are formed (100) in insulating layers. The layers are then adequately treated with a particular plasma process (101). Following this plasma treatment a self-limiting, self-saturating atomic layer deposition (ALD) reaction (115) can occur without significantly filling the pores forming improved interconnects.

Abstract translation: 提供了集成电路中双镶嵌结构的保形衬里的方法和结构。 优选实施例涉及在多孔材料中形成的开口上提供适形衬里。 在绝缘层中形成沟槽（100）。 然后用特定的等离子体处理（101）充分处理各层。 在这种等离子体处理之后，可以发生自限制的自饱和原子层沉积（ALD）反应（115）而不显着填充形成改进的互连的孔。

公开(公告)号：EP1851794A1

公开(公告)日：2007-11-07

申请号：EP06735499.3

申请日：2006-02-21

Applicant: ASM America, Inc.

Inventor： SPREY, Hessel ,  FUKUDA, Hideaki, Tsuduki-ku ,  KEMELING, Nathanael R.C. ,  GOUNDAR, Kamal Kishore ,  KUMAR, Davendra ,  STOKHOF, Maarten

IPC: H01L21/768 ,  H01L21/285

CPC classification number: H01L21/02063 ,  C23C14/02 ,  C23C16/02 ,  C23C16/36 ,  C23C16/45525 ,  C23C16/45531 ,  H01L21/28562 ,  H01L21/3105 ,  H01L21/76807 ,  H01L21/7681 ,  H01L21/76826 ,  H01L21/76831 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76873

Abstract: Method and structures are provided for conformal lining of dual damascene structures in integrated circuits. Preferred embodiments are directed to providing conformal lining over openings formed in porous materials. Trenches are formed (100) in insulating layers. The layers are then adequately treated with a particular plasma process (101). Following this plasma treatment a self-limiting, self-saturating atomic layer deposition (ALD) reaction (115) can occur without significantly filling the pores forming improved interconnects.