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    OXYGEN BRIDGE STRUCTURES AND METHODS
    1.
    发明申请
    OXYGEN BRIDGE STRUCTURES AND METHODS 审中-公开
    氧气桥结构与方法

    公开(公告)号：WO2004040642A1

    公开(公告)日：2004-05-13

    申请号：PCT/US2003/033214

    申请日：2003-10-21

    Applicant: ASM AMERICA, INC. ,  ASM INTERNATIONAL N.V.

    Inventor： RAAIJMAKERS, Ivo ,  SOININEN, Pekka, J. ,  ELERS, Kai-Erik

    IPC: H01L21/768

    CPC classification number: H01L21/76846 ,  C23C16/0272 ,  H01L21/28562 ,  H01L21/32051 ,  H01L21/76856 ,  H01L21/76879 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: A method is proposed for improving the adhesion between a diffusion barrier film and a metal film. Both the diffusion barrier film and the metal film can be deposited in either sequence onto a semiconductor substrate. A substrate comprising a first film, which is one of a diffusion barrier film or a metal film, with the first film being exposed at least at part of the surface area of the substrate, is exposed to an oxygen-containing reactant to create a surface termination of about one monolayer of oxygen-containing groups or oxygen atoms on the exposed parts of the first film. Then the second film, which is the other one of a diffusion barrier film and a metal film, is deposited onto the substrate. Furthermore, an oxygen bridge structure is proposed, the structure comprising a diffusion barrier film and a metal film having an interface with the diffusion barrier film, wherein the interface comprises a monolayer of oxygen atoms.

    Abstract translation: 提出了改善扩散阻挡膜和金属膜之间的粘合性的方法。 扩散阻挡膜和金属膜都可以以任一顺序沉积到半导体衬底上。 包含第一膜，其是扩散阻挡膜或金属膜之一，其中第一膜至少部分地暴露于基底的表面区域，以暴露于含氧反应物以形成表面 在第一膜的暴露部分上终止约一个单层的含氧基团或氧原子。 然后将作为扩散阻挡膜和金属膜中的另一个的第二膜沉积在基板上。 此外，提出了氧桥结构，其结构包括扩散阻挡膜和与扩散阻挡膜具有界面的金属膜，其中界面包括单层氧原子。

    SEALING POROUS STRUCTURES
    2.
    发明申请
    SEALING POROUS STRUCTURES 审中-公开
    密封多孔结构

    公开(公告)号：WO2004049432A2

    公开(公告)日：2004-06-10

    申请号：PCT/US2003/040061

    申请日：2003-11-21

    Applicant: ASM AMERICA, INC. ,  ASM INTERNATIONAL N.V.

    Inventor： RAAIJMAKERS, Ivo ,  SOININEN, Pekka, J. ,  GRANNEMAN, Ernst ,  HAUKKA, Suvi ,  ELERS, Kai-Erik ,  TUOMINEN, Marco ,  SPREY, Hessel ,  TERHORST, Herbert ,  HENDRIKS, Menso

    IPC: H01L23/00

    CPC classification number: H01L21/76843 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/7681 ,  H01L21/76814 ,  H01L21/7682 ,  H01L21/76825 ,  H01L21/76828 ,  H01L21/76831 ,  H01L21/76844 ,  H01L21/76864 ,  H01L21/76873 ,  H01L23/5226 ,  H01L23/53238 ,  H01L2221/1047 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: Method and structures are provided for conformal lining of dual damascene structures in integrated circuits, and particularly of openings formed in porous materials. Trenches and contact vias are formed in insulating layers. The pores on the sidewalls of the trenches and vias are blocked, and then the structure is exposed to alternating chemistries to form monolayers of a desired lining material. In exemplary process flows chemical or physical vapor deposition (CVD or PVD) of a sealing layer blocks the pores due to imperfect conformality. An alternating process can also be arranged by selection of pulse separation and/or pulse duration to achieve reduced conformality relative to a self-saturating, self-limiting atomic layer deposition (ALD) process. In still another arrangement, layers with anisotropic pore structures can be sealed by selectively melting upper surfaces. Blocking is followed by a self-limiting, self-saturating atomic layer deposition (ALD) reactions without significantly filling the pores.

    Abstract translation: 提供了用于集成电路中的双镶嵌结构的保形衬里的方法和结构，并且尤其提供了在多孔材料中形成的开口。 沟槽和接触过孔在绝缘层中形成。 沟槽和通孔侧壁上的孔被阻塞，然后该结构暴露于交替化学反应以形成所需衬里材料的单层。 在示例性工艺流程中，由于不完全的共形性，密封层的化学或物理气相沉积（CVD或PVD）阻塞孔隙。 也可以通过选择脉冲间隔和/或脉冲持续时间来安排交替工艺，以相对于自饱和自限原子层沉积（ALD）工艺实现降低的共形性。 在又一种布置中，具有各向异性孔结构的层可通过选择性地熔化上表面来密封。 封闭之后是自我限制的自饱和原子层沉积（ALD）反应，没有显着填充孔。

    ATOMIC LAYER DEPOSITION REACTOR
    3.
    发明申请
    ATOMIC LAYER DEPOSITION REACTOR 审中-公开
    原子层沉积反应器

    公开(公告)号：WO2003016587A1

    公开(公告)日：2003-02-27

    申请号：PCT/US2002/026192

    申请日：2002-08-15

    Applicant: ASM MICROCHEMISTRY OY ,  ASM AMERICA, INC,

    Inventor： KILPELA, Olli ,  SAANILA, Ville ,  LI, Wei-Min ,  ELERS, Kai-Erik ,  KOSTAMO, Juhana ,  RAAIJMAKERS, Ivo ,  GRANNEMAN, Ernst

    IPC: C23C16/00

    CPC classification number: C23C16/45544 ,  C23C16/4412 ,  C23C16/452 ,  C23C16/45514 ,  C23C16/45536 ,  C23C16/45565 ,  C23C16/45589 ,  C23C16/507 ,  C23C16/509

    Abstract: Various reactors for growing thin films on a substrate (16) by subjecting the substrate (16) to alternately repeated surface reactions of vapor-phase reactants are disclosed. In one embodiment, the reactor (12) comprises a reaction chamber (14). A showerhead plate (67) divides the reaction chamber (14) into upper and lower parts. A first precursor is directed towards the lower half of the reaction chamber (14) and a second precursor is directed towards the upper half of the reaction chamber (14). The substrate (16) is disposed within the lower half of the reaction chamber (14). The showerhead plate (67) includes plurality passages (72) such that the upper half is in communication with the lower half of the reaction chamber (14). In another arrangement, the reaction chamber (14) includes a shutter plate (120). In other arrangements, the showerhead plate (67) is arranged to modify the local flow patterns of the gases flowing through the reaction chamber (14).

    Abstract translation: 公开了通过使衬底（16）交替重复气相反应的表面反应来在衬底（16）上生长薄膜的各种反应器。 在一个实施例中，反应器（12）包括反应室（14）。 喷头板（67）将反应室（14）分成上部和下部。 第一前体指向反应室（14）的下半部分，第二前体指向反应室（14）的上半部分。 基板（16）设置在反应室（14）的下半部内。 喷头板（67）包括多个通道（72），使得上半部分与反应室（14）的下半部连通。 在另一布置中，反应室（14）包括挡板（120）。 在其他布置中，喷头板（67）布置成改变流过反应室（14）的气体的局部流动模式。

    VAPOR DEPOSITION OF METAL CARBIDE FILMS
    4.
    发明申请
    VAPOR DEPOSITION OF METAL CARBIDE FILMS 审中-公开
    金属碳膜的蒸气沉积

    公开(公告)号：WO2008057749A1

    公开(公告)日：2008-05-15

    申请号：PCT/US2007/082131

    申请日：2007-10-22

    Applicant: ASM AMERICA, INC. ,  ELERS, Kai-Erik

    Inventor： ELERS, Kai-Erik

    IPC: C23C16/32 ,  C23C16/455

    CPC classification number: C23C16/32 ,  C23C16/45527 ,  C23C16/45534 ,  C23C16/45542

    Abstract: Methods of forming metal carbide thin films are provided. According to preferred embodiments, metal carbide thin films are formed in an atomic layer deposition (ALD) process by alternately and sequentially contacting a substrate in a reaction space with spatially and temporally separated vapor phase pulses of a metal source chemical, a reducing agent and a carbon source chemical. The reducing agent is preferably selected from the group consisting of excited species of hydrogen and silicon-containing compounds.

    Abstract translation: 提供了形成金属碳化物薄膜的方法。 根据优选实施例，通过交替地和顺序地将反应空间中的衬底与金属源化学品，还原剂和还原剂的空间和时间分离的气相脉冲交替地和顺序地接触，在原子层沉积（ALD）工艺中形成金属碳化物薄膜 碳源化学品。 还原剂优选选自氢和含硅化合物的激发物质。

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