公开(公告)号：WO2004049432A2

公开(公告)日：2004-06-10

申请号：PCT/US2003/040061

申请日：2003-11-21

Applicant: ASM AMERICA, INC. ,  ASM INTERNATIONAL N.V.

Inventor： RAAIJMAKERS, Ivo ,  SOININEN, Pekka, J. ,  GRANNEMAN, Ernst ,  HAUKKA, Suvi ,  ELERS, Kai-Erik ,  TUOMINEN, Marco ,  SPREY, Hessel ,  TERHORST, Herbert ,  HENDRIKS, Menso

IPC: H01L23/00

CPC classification number: H01L21/76843 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/7681 ,  H01L21/76814 ,  H01L21/7682 ,  H01L21/76825 ,  H01L21/76828 ,  H01L21/76831 ,  H01L21/76844 ,  H01L21/76864 ,  H01L21/76873 ,  H01L23/5226 ,  H01L23/53238 ,  H01L2221/1047 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Method and structures are provided for conformal lining of dual damascene structures in integrated circuits, and particularly of openings formed in porous materials. Trenches and contact vias are formed in insulating layers. The pores on the sidewalls of the trenches and vias are blocked, and then the structure is exposed to alternating chemistries to form monolayers of a desired lining material. In exemplary process flows chemical or physical vapor deposition (CVD or PVD) of a sealing layer blocks the pores due to imperfect conformality. An alternating process can also be arranged by selection of pulse separation and/or pulse duration to achieve reduced conformality relative to a self-saturating, self-limiting atomic layer deposition (ALD) process. In still another arrangement, layers with anisotropic pore structures can be sealed by selectively melting upper surfaces. Blocking is followed by a self-limiting, self-saturating atomic layer deposition (ALD) reactions without significantly filling the pores.

Abstract translation: 提供了用于集成电路中的双镶嵌结构的保形衬里的方法和结构，并且尤其提供了在多孔材料中形成的开口。 沟槽和接触过孔在绝缘层中形成。 沟槽和通孔侧壁上的孔被阻塞，然后该结构暴露于交替化学反应以形成所需衬里材料的单层。 在示例性工艺流程中，由于不完全的共形性，密封层的化学或物理气相沉积（CVD或PVD）阻塞孔隙。 也可以通过选择脉冲间隔和/或脉冲持续时间来安排交替工艺，以相对于自饱和自限原子层沉积（ALD）工艺实现降低的共形性。 在又一种布置中，具有各向异性孔结构的层可通过选择性地熔化上表面来密封。 封闭之后是自我限制的自饱和原子层沉积（ALD）反应，没有显着填充孔。

公开(公告)号：WO2003016587A1

公开(公告)日：2003-02-27

申请号：PCT/US2002/026192

申请日：2002-08-15

Applicant: ASM MICROCHEMISTRY OY ,  ASM AMERICA, INC,

Inventor： KILPELA, Olli ,  SAANILA, Ville ,  LI, Wei-Min ,  ELERS, Kai-Erik ,  KOSTAMO, Juhana ,  RAAIJMAKERS, Ivo ,  GRANNEMAN, Ernst

IPC: C23C16/00

CPC classification number: C23C16/45544 ,  C23C16/4412 ,  C23C16/452 ,  C23C16/45514 ,  C23C16/45536 ,  C23C16/45565 ,  C23C16/45589 ,  C23C16/507 ,  C23C16/509

Abstract: Various reactors for growing thin films on a substrate (16) by subjecting the substrate (16) to alternately repeated surface reactions of vapor-phase reactants are disclosed. In one embodiment, the reactor (12) comprises a reaction chamber (14). A showerhead plate (67) divides the reaction chamber (14) into upper and lower parts. A first precursor is directed towards the lower half of the reaction chamber (14) and a second precursor is directed towards the upper half of the reaction chamber (14). The substrate (16) is disposed within the lower half of the reaction chamber (14). The showerhead plate (67) includes plurality passages (72) such that the upper half is in communication with the lower half of the reaction chamber (14). In another arrangement, the reaction chamber (14) includes a shutter plate (120). In other arrangements, the showerhead plate (67) is arranged to modify the local flow patterns of the gases flowing through the reaction chamber (14).

Abstract translation: 公开了通过使衬底（16）交替重复气相反应的表面反应来在衬底（16）上生长薄膜的各种反应器。 在一个实施例中，反应器（12）包括反应室（14）。 喷头板（67）将反应室（14）分成上部和下部。 第一前体指向反应室（14）的下半部分，第二前体指向反应室（14）的上半部分。 基板（16）设置在反应室（14）的下半部内。 喷头板（67）包括多个通道（72），使得上半部分与反应室（14）的下半部连通。 在另一布置中，反应室（14）包括挡板（120）。 在其他布置中，喷头板（67）布置成改变流过反应室（14）的气体的局部流动模式。