公开(公告)号：WO2016191432A1

公开(公告)日：2016-12-01

申请号：PCT/US2016/033955

申请日：2016-05-24

Applicant: ASM IP HOLDING B.V. ,  ASM AMERICA, INC.

Inventor： SARNET, Tiina ,  HATANPÄÄ, Timo ,  RITALA, Mikko ,  LESKELÄ, Markku

IPC: C23C16/22 ,  H01L21/02 ,  H01L31/18

CPC classification number: C23C16/305 ,  C01G39/06 ,  C01P2004/03 ,  C23C16/45553 ,  G01N30/72 ,  H01L21/02568 ,  H01L21/0262

Abstract: Processes for forming Mo and W containing thin films, such as MoS 2 , WS 2 , MoSe 2 , and WSe 2 thin films are provided. Methods are also provided for synthesizing Mo or W beta-diketonate precursors. Additionally, methods are provided for forming 2D materials containing Mo or W.

Abstract translation: 提供了用于形成包含MoS2，WS2，MoSe2和WSe2薄膜的Mo和W的工艺。 还提供了用于合成Mo或Wβ-二酮前体的方法。 另外，提供了用于形成含有Mo或W的2D材料的方法

公开(公告)号：WO2020003000A1

公开(公告)日：2020-01-02

申请号：PCT/IB2019/000817

申请日：2019-06-21

Applicant: ASM IP HOLDING B.V.

Inventor： VÄYRYNEN, Katja ,  HATANPÄÄ, Timo ,  RITALA, Mikko ,  LESKELÄ, Markku

IPC: C23C16/06 ,  C23C16/08 ,  C23C16/18 ,  C23C16/455 ,  G11B5/62

Abstract: A method of depositing a metal-containing material is disclosed. The method can include use of cyclic deposition techniques, such as cyclic chemical vapor deposition and atomic layer deposition. The metal-containing material can include intermetallic compounds. A structure including the metal-containing material and a system for forming the material are also disclosed.

公开(公告)号：WO2020002995A1

公开(公告)日：2020-01-02

申请号：PCT/IB2019/000805

申请日：2019-06-21

Applicant: ASM IP HOLDING B.V.

Inventor： VÄYRYNEN, Katja ,  HATANPÄÄ, Timo ,  VIHERVAARA, Anton ,  RITALA, Mikko ,  LESKELÄ, Markku

IPC: C23C16/06 ,  C23C16/08 ,  C23C16/18 ,  C23C16/455 ,  G11B5/62

Abstract: A method of depositing a metal-containing material is disclosed. The method can include use of cyclic deposition techniques, such as cyclic chemical vapor deposition and atomic layer deposition. The metal -containing material can include intermetallic compounds. A structure including the metal -containing material and a system tor forming the material are also disclosed.

公开(公告)号：WO2011056519A2

公开(公告)日：2011-05-12

申请号：PCT/US2010/053982

申请日：2010-10-25

Applicant: ASM INTERNATIONAL N.V. ,  ASM AMERICA INC. ,  PORE, Viljami ,  HATANPÄÄ, Timo ,  RITALA, Mikko ,  LESKELÄ, Markku

Inventor： PORE, Viljami ,  HATANPÄÄ, Timo ,  RITALA, Mikko ,  LESKELÄ, Markku

IPC: H01L21/205

CPC classification number: C23C16/45553 ,  C23C16/18 ,  C23C16/305 ,  C23C16/4408 ,  C23C16/45555 ,  H01L21/02521 ,  H01L21/02538 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/02549 ,  H01L21/02551 ,  H01L21/0262 ,  H01L45/06 ,  H01L45/144 ,  H01L45/148 ,  H01L45/1616

Abstract: Atomic layer deposition (ALD) processes for forming Group VA element containing thin films, such as Sb, Sb-Te, Ge-Sb and Ge-Sb-Te thin films are provided, along with related compositions and structures. Sb precursors of the formula Sb( SiR 1 R 2 R 3 ) 3 are preferably used, wherein R 1 , R 2 , and R 3 are alkyl groups. As, Bi and P precursors are also described. Methods are also provided for synthesizing these Sb precursors. Methods are also provided for using the Sb thin films in phase change memory devices.

Abstract translation: 提供了用于形成含有Sb，Sb-Te，Ge-Sb和Ge-Sb-Te薄膜的含VA薄膜的原子层沉积（ALD）工艺，以及相关组合物和结构。 优选使用Sb（SiR1R2R3）3的Sb前体，其中R1，R2和R3是烷基。 As，Bi和P前体也被描述。 还提供了用于合成这些Sb前体的方法。 还提供了在相变存储器件中使用Sb薄膜的方法。