公开(公告)号：WO2016191432A1

公开(公告)日：2016-12-01

申请号：PCT/US2016/033955

申请日：2016-05-24

Applicant: ASM IP HOLDING B.V. ,  ASM AMERICA, INC.

Inventor： SARNET, Tiina ,  HATANPÄÄ, Timo ,  RITALA, Mikko ,  LESKELÄ, Markku

IPC: C23C16/22 ,  H01L21/02 ,  H01L31/18

CPC classification number: C23C16/305 ,  C01G39/06 ,  C01P2004/03 ,  C23C16/45553 ,  G01N30/72 ,  H01L21/02568 ,  H01L21/0262

Abstract: Processes for forming Mo and W containing thin films, such as MoS 2 , WS 2 , MoSe 2 , and WSe 2 thin films are provided. Methods are also provided for synthesizing Mo or W beta-diketonate precursors. Additionally, methods are provided for forming 2D materials containing Mo or W.

Abstract translation: 提供了用于形成包含MoS2，WS2，MoSe2和WSe2薄膜的Mo和W的工艺。 还提供了用于合成Mo或Wβ-二酮前体的方法。 另外，提供了用于形成含有Mo或W的2D材料的方法

公开(公告)号：WO2020003000A1

公开(公告)日：2020-01-02

申请号：PCT/IB2019/000817

申请日：2019-06-21

Applicant: ASM IP HOLDING B.V.

Inventor： VÄYRYNEN, Katja ,  HATANPÄÄ, Timo ,  RITALA, Mikko ,  LESKELÄ, Markku

IPC: C23C16/06 ,  C23C16/08 ,  C23C16/18 ,  C23C16/455 ,  G11B5/62

Abstract: A method of depositing a metal-containing material is disclosed. The method can include use of cyclic deposition techniques, such as cyclic chemical vapor deposition and atomic layer deposition. The metal-containing material can include intermetallic compounds. A structure including the metal-containing material and a system for forming the material are also disclosed.

公开(公告)号：WO2020002995A1

公开(公告)日：2020-01-02

申请号：PCT/IB2019/000805

申请日：2019-06-21

Applicant: ASM IP HOLDING B.V.

Inventor： VÄYRYNEN, Katja ,  HATANPÄÄ, Timo ,  VIHERVAARA, Anton ,  RITALA, Mikko ,  LESKELÄ, Markku

IPC: C23C16/06 ,  C23C16/08 ,  C23C16/18 ,  C23C16/455 ,  G11B5/62

Abstract: A method of depositing a metal-containing material is disclosed. The method can include use of cyclic deposition techniques, such as cyclic chemical vapor deposition and atomic layer deposition. The metal -containing material can include intermetallic compounds. A structure including the metal -containing material and a system tor forming the material are also disclosed.

公开(公告)号：WO2018140235A1

公开(公告)日：2018-08-02

申请号：PCT/US2018/013079

申请日：2018-01-10

Applicant: ASM IP HOLDING B.V.

Inventor： MÄKELÄ, Maarit ,  HATANPÄÄ, Timo ,  RITALA, Mikko ,  MARKKU, Leskelä

IPC: C23C16/18 ,  C23C16/455 ,  C07F1/12

Abstract: Vapor deposition processes for forming thin films comprising gold on a substrate in a reaction space are provided. The processes can be cyclical vapor deposition processes, such as atomic layer deposition (ALD) processes. The processes can include contacting the substrate with a gold precursor comprising at least one sulfur donor ligand and at least one alkyl ligand, and contacting the substrate with a second reactant comprising ozone. The deposited thin films comprising gold can be uniform, continuous, and conductive at very low thicknesses.

公开(公告)号：WO2011056519A2

公开(公告)日：2011-05-12

申请号：PCT/US2010/053982

申请日：2010-10-25

Applicant: ASM INTERNATIONAL N.V. ,  ASM AMERICA INC. ,  PORE, Viljami ,  HATANPÄÄ, Timo ,  RITALA, Mikko ,  LESKELÄ, Markku

Inventor： PORE, Viljami ,  HATANPÄÄ, Timo ,  RITALA, Mikko ,  LESKELÄ, Markku

IPC: H01L21/205

CPC classification number: C23C16/45553 ,  C23C16/18 ,  C23C16/305 ,  C23C16/4408 ,  C23C16/45555 ,  H01L21/02521 ,  H01L21/02538 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/02549 ,  H01L21/02551 ,  H01L21/0262 ,  H01L45/06 ,  H01L45/144 ,  H01L45/148 ,  H01L45/1616

Abstract: Atomic layer deposition (ALD) processes for forming Group VA element containing thin films, such as Sb, Sb-Te, Ge-Sb and Ge-Sb-Te thin films are provided, along with related compositions and structures. Sb precursors of the formula Sb( SiR 1 R 2 R 3 ) 3 are preferably used, wherein R 1 , R 2 , and R 3 are alkyl groups. As, Bi and P precursors are also described. Methods are also provided for synthesizing these Sb precursors. Methods are also provided for using the Sb thin films in phase change memory devices.

Abstract translation: 提供了用于形成含有Sb，Sb-Te，Ge-Sb和Ge-Sb-Te薄膜的含VA薄膜的原子层沉积（ALD）工艺，以及相关组合物和结构。 优选使用Sb（SiR1R2R3）3的Sb前体，其中R1，R2和R3是烷基。 As，Bi和P前体也被描述。 还提供了用于合成这些Sb前体的方法。 还提供了在相变存储器件中使用Sb薄膜的方法。

公开(公告)号：WO2009132207A3

公开(公告)日：2009-10-29

申请号：PCT/US2009/041561

申请日：2009-04-23

Applicant: ASM INTERNATIONAL N.V. ,  ASM AMERICA, INC.

Inventor： PORE, Viljami ,  HATANPÄÄ, Timo ,  RITALA, Mikko ,  LESKELA, Markku

IPC: C23C16/44 ,  C23C16/06 ,  C23C16/16 ,  H01L21/205

Abstract: Atomic layer deposition (ALD) processes for forming Te-containing thin films, such as Sb-Te, Ge-Te, Ge-Sb-Te, Bi-Te, and Zn-Te thin films are provided. ALD processes are also provided for forming Se-containing thin films, such as Sb-Se, Ge-Se, Ge-Sb-Se, Bi-Se, and Zn-Se thin films are also provided. Te and Se precursors of the formula (Te,Se)( SiR 1 R 2 R 3 ) 2 are preferably used, wherein R 1 , R 2 , and R 3 are alkyl groups. Methods are also provided for synthesizing these Te and Se precursors. Methods are also provided for using the Te and Se thin films in phase change memory devices.