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公开(公告)号：US20190066859A1
公开(公告)日：2019-02-28
申请号：US15770688
申请日：2016-11-03
Applicant: ASML Netherlands B.V.
Inventor： Pieter Willem Herman DE JAGER , Sipke Jacob BIJLSMA , Olav Waldemar Vladimir FRIJNS , Andrey Alexandrovich NIKIPELOV , Nicolaas TEN KATE , Antonius Theodorus Anna Maria DERKSEN , Jacobus Johannus Leonardus Hendricus VERSPAY , Robert Gabriël Maria LANSBERGEN , Aukje KASTELIJN
Abstract: A radioisotope production apparatus (RI) comprising an electron source arranged to provide an electron beam (E). The electron source comprises an electron injector (10) and an electron accelerator (20). The radioisotope production apparatus (RI) further comprises a target support structure configured to hold a target (30) and a beam splitter (40) arranged to direct the a first portion of the electron beam along a first path towards a first side of the target (30) and to direct a second portion of the electron beam along a second path towards a second side of the target (30).
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公开(公告)号：US20170264071A1
公开(公告)日：2017-09-14
申请号：US15600149
申请日：2017-05-19
Applicant: ASML Netherlands B.V.
Inventor： Andrey Alexandrovich NIKIPELOV , Vadim Yevgenyevich Banine , Pieter Willem Herman De Jager , Gosse Charles De Vries , Olav Waldemar Vladimir Frijns , Leonardus Adrianus Gerardus Grimminck , Andelko Katalenic , Johannes Antonius Gerardus Akkermans , Erik Loopstra , Wouter Joep Engelen , Petrus Rutgerus Bartraij , Teis Johan Coenen , Wilhelmus Patrick Elisabeth Maria Op 'T Root
CPC classification number: H01S3/0903 , H01J1/34 , H05H7/08 , H05H2007/084
Abstract: A photocathode comprises a substrate in which a cavity is formed and a film of material disposed on the substrate. The film of material comprises an electron emitting surface configured to emit electrons when illuminated by a beam of radiation. The electron emitting surface is on an opposite side of the film of material from the cavity.
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公开(公告)号：US20170184975A1
公开(公告)日：2017-06-29
申请号：US15129360
申请日：2015-03-30
Applicant: ASML Netherlands B.V.
Inventor： Andrey Alexandrovich NIKIPELOV , Johannes Antonius Gerardus AKKERMANS , Leonardus Adrianus Gerardus GRIMMINCK , Erik Roelof LOOPSTRA , Michael Jozef Mathijs RENKENS , Adrian TOMA , Han-Kwang NIENHUYS
CPC classification number: G03F7/70025 , G03F7/70008 , H01F6/04 , H01F7/0273 , H01F7/0278 , H01S3/0903 , H05H7/04 , H05H2007/041
Abstract: An undulator for a free electron laser includes a pipe for an electron beam and one or more periodic magnetic structures extending axially along the pipe. Each periodic magnetic structure includes a plurality of magnets and a plurality of passive ferromagnetic elements, the plurality of magnets being arranged alternately with the plurality of passive ferromagnetic elements in a line extending in an axial direction. Each of the plurality of magnets is spatially separated from the pipe, and each of the passive ferromagnetic elements extends radially from an adjacent magnet towards the pipe. A spacer element may be provided between the magnets and the pipe to provide radiation shielding for the magnets and/or cooling for the pipe.
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公开(公告)号：US20190035594A1
公开(公告)日：2019-01-31
申请号：US16072385
申请日：2017-02-07
Applicant: ASML Netherlands B.V.
IPC: H01J37/073 , H01S3/09
CPC classification number: H01J37/073 , H01J2237/063 , H01S3/0903 , H05H2007/084
Abstract: An electron source, e.g. for a free electron laser used for EUV lithography comprises: a cathode (203) configured to be connected to a negative potential (100, 101); a laser (110) configured to direct pulses of radiation onto the cathode so as to cause the cathode to emit bunches of electrons; an RF booster (180) connected to an RF source and configured to accelerate the bunches of electrons; and a timing corrector (303, 313, 400, 401) configured to correct the time of arrival of bunches of electrons at the RF booster relative to the RF voltage provided by the RF source. The timing corrector may comprise a correction electrode (303, 313) surrounding a path of the bunches of electrons from the cathode to the RF booster and a correction voltage source (400, 401) configured to apply a correction voltage to the correction electrode.
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公开(公告)号：US20160301180A1
公开(公告)日：2016-10-13
申请号：US15035674
申请日：2014-11-27
Applicant: ASML NETHERLANDS B.V.
Inventor： Andrey Alexandrovich NIKIPELOV , Vadim Yevgenyevich BANINE , Pieter Willem Herman DE JAGER , Gosse Charles DE VRIES , Olav Waldemar Vladimir FRIJNS , Leonardus Adrianus Gerardus GRIMMINCK , Andelko KATALENIC , Johannes Antonius Gerardus AKKERMANS , Erik LOOPSTRA , Wouter Joep ENGELEN , Petrus Rutgerus BARTRAIJ , Teis Johan COENEN , Wilhelmus Patrick Elisabeth Maria OP 'T ROOT
CPC classification number: H01S3/0903 , H01J1/34 , H05H7/08 , H05H2007/084
Abstract: An injector arrangement for providing an electron beam. The injector arrangement comprises a first injector for providing electron bunches, and a second injector for providing electrons bunches. The injector arrangement is operable in a first mode in which the electron beam comprises electron bunches provided by the first injector only and a second mode in which the electron beam comprises electron bunches provided by the second injector only.
Abstract translation: 一种用于提供电子束的喷射装置。 喷射器装置包括用于提供电子束的第一喷射器和用于提供电子束的第二喷射器。 喷射器装置可以在第一模式中操作，其中电子束包括仅由第一注射器提供的电子束和第二模式，其中电子束包括仅由第二注射器提供的电子束。
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Patent Agency Ranking
公开(公告)号：US20190302625A1
公开(公告)日：2019-10-03
申请号：US16435630
申请日：2019-06-10
Applicant: ASML NETHERLANDS B.V.
Inventor： Wouter Joep ENGELEN , Otger Jan LUITEN , Andrey Alexandrovich NIKIPELOV , Vadim Yevgenyevich BANINE , Pieter Willem Herman DE JAGER , Erik Roelof LOOPSTRA
IPC: G03F7/20 , H05H7/04 , G02B1/06 , G01J1/04 , G01J1/42 , G01J1/26 , H01S3/09 , G02B5/20 , G02B26/02 , G21K1/10
Abstract: A method of patterning lithographic substrates, the method including using a free electron laser to generate EUV radiation and delivering the EUV radiation to a lithographic apparatus which projects the EUV radiation onto lithographic substrates, wherein the method further includes reducing fluctuations in the power of EUV radiation delivered to the lithographic substrates by using a feedback-based control loop to monitor the free electron laser and adjust operation of the free electron laser accordingly.
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公开(公告)号：US20160225477A1
公开(公告)日：2016-08-04
申请号：US14917623
申请日：2014-09-24
Applicant: ASML NETHERLANDS B.V.
Inventor： Vadim Yevgenyevich BANINE , Peturs Rutgerus BARTRAIJ , Ramon Pascal VAN GORKOM , Lucas Johannes Peter AMENT , Pieter Willem Herman DE JAGER , Gosse Charles DE VRIES , Rilpho Ludovicus DONKER , Wouter Joep ENGELEN , Olav Waldemar Vladimir FRIJNS , Leonardus Adrianus Gerardus GRIMMINCK , Andelko KATALENIC , Erik Roelof LOOPSTRA , Han-Kwang NIENHUYS , Andrey Alexandrovich NIKIPELOV , Michael Jozef Mathijs RENKENS , Franciscus Johannes Joseph JANSSEN , Borgert KRUIZINGA
Abstract: A delivery system for use within a lithographic system. The beam delivery system comprises optical elements arranged to receive a radiation beam from a radiation source and to reflect portions of radiation along one or more directions to form a one or more branch radiation beams for provision to one or more tools.
Abstract translation: 用于光刻系统的传送系统。 光束传送系统包括被配置为从辐射源接收辐射束并且沿着一个或多个方向反射辐射部分的光学元件，以形成用于提供给一个或多个工具的一个或多个分支辐射束。
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公开(公告)号：US20160147161A1
公开(公告)日：2016-05-26
申请号：US14900110
申请日：2014-06-17
Applicant: ASML NETHERLANDS B.V.
Inventor： Andrey Alexandrovich NIKIPELOV , Olav Waldemar Vladimir FRIJNS , Gosse Charles DE VRIES , Erik Roelof LOOPSTRA , Vadim Yevgenyevich BANINE , Pieter Willem Herman DE JAGER , Rilpho Ludovicus DONKER , Han-Kwang NIENHUYS , Borgert KRUIZINGA , Wouter Joep ENGELEN , Otger Jan LUITEN , Johannes Antonius Gerardus AKKERMANS , Leonardus Adrianus Gerardus GRIMMINCK , Vladimir LITVINENKO
IPC: G03F7/20
CPC classification number: G03F7/70033 , G01J1/0407 , G01J1/0418 , G01J1/26 , G01J1/429 , G02B1/06 , G02B5/205 , G02B26/023 , G03F7/70008 , G03F7/7055 , G03F7/70558 , G03F7/7085 , G21K1/10 , H01S3/005 , H01S3/0085 , H01S3/0903 , H05H7/04
Abstract: A method of patterning lithographic substrates that includes using a free electron laser to generate EUV radiation and delivering the EUV radiation to a lithographic apparatus which projects the EUV radiation onto lithographic substrates. The method further includes reducing fluctuations in the power of EUV radiation delivered to the lithographic substrates by using a feedback-based control loop to monitor the free electron laser and adjust operation of the free electron laser accordingly, and applying variable attenuation to EUV radiation that has been output by the free electron laser in order to further control the power of EUV radiation delivered to the lithographic apparatus.
Abstract translation: 图案化平版印刷基板的方法，其包括使用自由电子激光器产生EUV辐射并将EUV辐射传送到将EUV辐射投影到平版印刷基板上的光刻设备。 该方法还包括通过使用基于反馈的控制回路来相对地调节自由电子激光器的调节和调整自由电子激光器的操作来减少递送到光刻基片的EUV辐射的功率波动，以及将可变衰减应用于具有 由自由电子激光器输出，以便进一步控制传送到光刻设备的EUV辐射的功率。
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公开(公告)号：US20210375498A1
公开(公告)日：2021-12-02
申请号：US17395709
申请日：2021-08-06
Applicant: ASML Netherlands B.V.
Inventor： Pieter Willem Herman DE JAGER , Sipke Jacob BIJLSMA , Olav Waldemar Vladimir FRIJNS , Andrey Alexandrovich NIKIPELOV , Nicolaas TEN KATE , Antonius Theodorus Anna Maria DERKSEN , Jacobus Johannus Leonardus Hendricus VERSPAY , Robert Gabriël Maria LANSBERGEN , Aukje Arianne Annette KASTELIJN
Abstract: A radioisotope production apparatus comprising an electron source arranged to provide an electron beam. The electron source comprises an electron injector and an electron accelerator. The radioisotope production apparatus further comprises a target support structure configured to hold a target and a beam splitter arranged to direct the a first portion of the electron beam along a first path towards a first side of the target and to direct a second portion of the electron beam along a second path towards a second side of the target.
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公开(公告)号：US20180081278A1
公开(公告)日：2018-03-22
申请号：US15789702
申请日：2017-10-20
Applicant: ASML NETHERLANDS B.V.
Inventor： Andrey Alexandrovich NIKIPELOV , Olav Waldemar Vladimir FRIJNS , Gosse Charles DE VRIES , Erik Roelof LOOPSTRA , Vadim Yevgenyevich BANINE , Pieter Willem Herman DE JAGER , Rilpho Ludovicus DONKER , Han-Kwang NIENHUYS , Borgert KRUIZINGA , Wouter Joep ENGELEN , Otger Jan LUITEN , Johannes Antonius Gerardus AKKERMANS , Leonardus Adrianus Gerardus GRIMMINCK , Vladimir LITVINENKO
CPC classification number: G03F7/70033 , G01J1/0407 , G01J1/0418 , G01J1/26 , G01J1/429 , G02B1/06 , G02B5/205 , G02B26/023 , G03F7/70008 , G03F7/7055 , G03F7/70558 , G03F7/7085 , G21K1/10 , H01S3/005 , H01S3/0085 , H01S3/0903 , H05H7/04
Abstract: A method of patterning lithographic substrates, the method comprising using a free electron laser to generate EUV radiation and delivering the EUV radiation to a lithographic apparatus which projects the EUV radiation onto lithographic substrates, wherein the method further comprises reducing fluctuations in the power of EUV radiation delivered to the lithographic substrates by using a feedback-based control loop to monitor the free electron laser and adjust operation of the free electron laser accordingly.
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