公开(公告)号：WO2015101461A2

公开(公告)日：2015-07-09

申请号：PCT/EP2014/076545

申请日：2014-12-04

Applicant: ASML NETHERLANDS B.V.

Inventor： CHEN, Guangqing ,  BAI, Shufeng ,  WANG, Jen-Shiang

IPC: G03F7/20

CPC classification number: G03F7/70633 ,  G03F7/705 ,  G03F7/70625 ,  G03F7/70641 ,  G03F7/70683

Abstract: A system to, and a method to, select a metrology target for use on a substrate including performing a lithographic simulation for a plurality of points on a process window region for each proposed target, identifying a catastrophic error for any of the plurality of points for each proposed target, eliminating each target having a catastrophic error at any of the plurality of points, performing a metrology simulation to determine a parameter over the process window for each target not having a catastrophic error at any of the plurality of points, and using the one or more resulting determined simulated parameters to evaluate target quality.

Abstract translation: 一种用于选择在基板上使用的测量目标的系统和方法，包括对于每个所提出的目标对于处理窗口区域上的多个点进行光刻模拟，识别多个点中的任何一个点的灾难性误差 每个所提出的目标，消除每个目标在多个点中的任一点具有灾难性错误，执行度量模拟以确定在多个点中的任一点上没有灾难性错误的每个目标的处理窗口上的参数，并且使用 一个或多个产生的确定的模拟参数来评估目标质量。

公开(公告)号：WO2016078861A1

公开(公告)日：2016-05-26

申请号：PCT/EP2015/074450

申请日：2015-10-22

Applicant: ASML NETHERLANDS B.V.

Inventor： CHEN, Guangqing ,  BAI, Shufeng ,  KENT, Eric, Richard ,  LU, Yen-Wen ,  TUFFY, Paul, Anthony ,  WANG, Jen-Shiang ,  ZHANG, Youping ,  ZWARTJES, Gertjan ,  BIJLSMA, Jan, Wouter

IPC: G03F7/20

CPC classification number: G06F17/5009 ,  G03F7/705 ,  G03F7/70633 ,  G03F7/70683 ,  G06F17/12 ,  G06F17/14

Abstract: The present disclosure teaches methods and systems for automatically generating robust metrology targets which can accommodate a variety of lithography processes and process perturbations. The methodology is referred to as "Design for Control". Individual steps of an overall lithography process are modeled into a single process sequence to simulate the physical wafer processing. That process sequence drives the creation of a three-dimensional device geometry as a whole, rather than "building" the device geometry element-by-element.

Abstract translation: 本公开教导了用于自动生成可容纳各种光刻处理和处理扰动的鲁棒测量目标的方法和系统。 该方法被称为“控制设计”。 整个光刻过程的各个步骤被建模为单个过程序列以模拟物理晶片处理。 该过程顺序驱动了整体的三维设备几何的创建，而不是逐个“构建”设备几何。

公开(公告)号：EP4538793A1

公开(公告)日：2025-04-16

申请号：EP23202984.3

申请日：2023-10-11

Applicant: ASML Netherlands B.V.

Inventor： FU, Jiyou ,  ZHAO, Wangshi ,  WHYSONG, David, Harold ,  ZHANG, Chenji ,  BAI, Shufeng ,  LI, Pengcheng

IPC: G03F7/00

Abstract: Disclosed is a method for designing a focus target for determining a focus setting of a lithographic apparatus used to form said target. The method comprises determining an initial target design, the initial target design being configure to enhance a mask 3D effect, resultant from the effect of three dimensional reticle features and an off-axis beam incidence on a reticle comprising target features arranged in accordance to said target design; modeling an exposure a target according to said initial target design and measurement of said target for at least a plurality of different focus settings; varying the target design based on said modeling so as to improve said target design in terms of at least one performance indicator; and determining a final target design based on said at least one performance indicator.