公开(公告)号：WO2016078861A1

公开(公告)日：2016-05-26

申请号：PCT/EP2015/074450

申请日：2015-10-22

Applicant: ASML NETHERLANDS B.V.

Inventor： CHEN, Guangqing ,  BAI, Shufeng ,  KENT, Eric, Richard ,  LU, Yen-Wen ,  TUFFY, Paul, Anthony ,  WANG, Jen-Shiang ,  ZHANG, Youping ,  ZWARTJES, Gertjan ,  BIJLSMA, Jan, Wouter

IPC: G03F7/20

CPC classification number: G06F17/5009 ,  G03F7/705 ,  G03F7/70633 ,  G03F7/70683 ,  G06F17/12 ,  G06F17/14

Abstract: The present disclosure teaches methods and systems for automatically generating robust metrology targets which can accommodate a variety of lithography processes and process perturbations. The methodology is referred to as "Design for Control". Individual steps of an overall lithography process are modeled into a single process sequence to simulate the physical wafer processing. That process sequence drives the creation of a three-dimensional device geometry as a whole, rather than "building" the device geometry element-by-element.

Abstract translation: 本公开教导了用于自动生成可容纳各种光刻处理和处理扰动的鲁棒测量目标的方法和系统。 该方法被称为“控制设计”。 整个光刻过程的各个步骤被建模为单个过程序列以模拟物理晶片处理。 该过程顺序驱动了整体的三维设备几何的创建，而不是逐个“构建”设备几何。

公开(公告)号：WO2020254066A1

公开(公告)日：2020-12-24

申请号：PCT/EP2020/064373

申请日：2020-05-25

Applicant: ASML NETHERLANDS B.V.

Inventor： WANG, Jen-Shiang ,  CHEN, Feng ,  FRANCAVILLA, Matteo, Alessandro ,  BIJLSMA, Jan, Wouter

IPC: G03F7/20

Abstract: A patterning process modeling method is described. The method comprises determining, with a front end of a process model, a function associated with process physics and/or chemistry of an operation within a patterning process flow; and determining, with a back end of the process model, a predicted wafer geometry. The back end comprises a volumetric representation of a target area on the wafer. The predicted wafer geometry is determined by applying the function from the front end to manipulate the volumetric representation of the wafer. The volumetric representation of the wafer may be generated using volumetric dynamic B-trees. The volumetric representation of the wafer may be manipulated using a level set method. The function associated with the process physics and/or chemistry of the operation within the patterning process flow may be a velocity/speed function. Incoming flux on a modeled surface of the wafer may be determined using ray tracing.