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1.
公开(公告)号:WO2018072962A1
公开(公告)日:2018-04-26
申请号:PCT/EP2017/073868
申请日:2017-09-21
Applicant: ASML NETHERLANDS B.V.
Inventor: KOU, Weitian , YPMA, Alexander , HAUPTMANN, Marc , KUPERS, Michiel , HAN, Min-Sub
IPC: G05B19/418
Abstract: A lithographic process is performed on a plurality of semiconductor wafers (900; 1020). The method includes selecting one or more of the wafers as sample wafers (910-914; 1030-1034). Metrology steps (922; 1042) are performed only on the selected sample wafers. Based on metrology results (924; 046) of the selected sample product units corrections are defined for use in controlling processing of the wafers or future wafers. The selection of sample product units is based at least partly on statistical analysis of object data (902; 1006) measured in relation to the wafers. The same object data or other data can be used for grouping wafers into groups. Selecting of sample wafers can include selecting wafers (910-914; 1030-1034) that are identified by said statistical analysis as most representative of the wafers in their group. The selecting of sample wafers can include elimination of product units (916; 036) that are identified as unrepresentative.
Abstract translation: 在多个半导体晶片(900; 1020)上执行光刻工艺。 该方法包括选择一个或多个晶片作为样品晶片(910-914; 1030-1034)。 度量步骤(922; 1042)仅在所选样品晶圆上执行。 基于所选择的样品产品单元的计量结果(924; 046),定义校正用于控制晶片或未来晶片的处理。 样本产品单元的选择至少部分基于对晶片测量的对象数据(902; 1006)的统计分析。 可以使用相同的对象数据或其他数据将晶圆分组成组。 选择样本晶片可以包括选择由所述统计分析确定为最具代表性的晶片组的晶片(910-914; 1030-1034)。 选择样品晶片可以包括消除被确定为不具代表性的产品单元(916; 036)。 p>
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公开(公告)号:WO2018197143A1
公开(公告)日:2018-11-01
申请号:PCT/EP2018/057926
申请日:2018-03-28
Applicant: ASML NETHERLANDS B.V.
Inventor: HAUPTMANN, Marc , MOS, Everhardus, Cornelis , KOU, Weitian , YPMA, Alexander , KUPERS, Michiel , YU, Hyun-Woo , HAN, Min-Sub
IPC: G03F7/20 , G05B19/418
CPC classification number: G03F7/70633 , G03F7/70525 , G05B19/41875
Abstract: A lithographic process is performed on a set of semiconductor substrates consisting of a plurality of substrates. As part of the process, the set of substrates is partitioned into a number of subsets. The partitioning may be based on a set of characteristics associated with a first layer on the substrates. A fingerprint of a performance parameter is then determined for at least one substrate of the set of substrates. Under some circumstances, the fingerprint is determined for one substrate of each subset of substrates. The fingerprint is associated with at least the first layer. A correction for the performance parameter associated with an application of a subsequent layer is then derived, the derivation being based on the determined fingerprint and the partitioning of the set of substrates.
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3.
公开(公告)号:EP3312693A1
公开(公告)日:2018-04-25
申请号:EP16195049.8
申请日:2016-10-21
Applicant: ASML Netherlands B.V.
Inventor: KOU, Weitian , YPMA, Alexander , HAUPTMANN, Marc , KUPERS, Michiel , HAN, Min-Sub
IPC: G05B19/418
CPC classification number: G05B19/41875 , G05B2219/2602 , G05B2219/32191 , G05B2219/32206 , G05B2219/37224 , G05B2219/42001 , G05B2219/45031 , Y02P90/22
Abstract: A lithographic process is performed on a plurality of semiconductor wafers (900; 1020). The method includes selecting one or more of the wafers as sample wafers (910-914; 1030-1034). Metrology steps (922; 1042) are performed only on the selected sample wafers. Based on metrology results (924; 1046) of the selected sample product units corrections are defined for use in controlling processing of the wafers or future wafers. The selection of sample product units is based at least partly on statistical analysis of object data (902; 1006) measured in relation to the wafers. The same object data or other data can be used for grouping wafers into groups. Selecting of sample wafers can include selecting wafers (910-914; 1030-1034) that are identified by said statistical analysis as most representative of the wafers in their group. The selecting of sample wafers can include elimination of product units (916; 1036) that are identified as unrepresentative.
Abstract translation: 在多个半导体晶片(900; 1020)上执行光刻工艺。 该方法包括选择一个或多个晶片作为样品晶片(910-914; 1030-1034)。 度量步骤(922; 1042)仅在所选样品晶圆上执行。 基于所选择的样本产品单元的计量结果(924; 1046),定义校正用于控制晶片或未来晶片的处理。 样本产品单元的选择至少部分基于对晶片测量的对象数据(902; 1006)的统计分析。 可以使用相同的对象数据或其他数据将晶圆分组成组。 选择样本晶片可以包括选择由所述统计分析确定为最具代表性的晶片组的晶片(910-914; 1030-1034)。 选择样品晶片可以包括消除被识别为不具代表性的产品单元(916; 1036)。
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公开(公告)号:EP3396458A1
公开(公告)日:2018-10-31
申请号:EP17168801.3
申请日:2017-04-28
Applicant: ASML Netherlands B.V.
Inventor: HAUPTMANN, Marc , MOS, Everhardus, Cornelis , KOU, Weitian , YPMA, Alexander , KUPERS, Michiel , YU, Hyun-Woo , HAN, Min-Sub
IPC: G03F7/20 , G05B19/418
CPC classification number: G03F7/70633 , G03F7/70525 , G05B19/41875
Abstract: A lithographic process is performed on a set of semiconductor substrates consisting of a plurality of substrates. As part of the process, the set of substrates is partitioned into a number of subsets. The partitioning may be based on a set of characteristics associated with a first layer on the substrates. A fingerprint of a performance parameter is then determined for at least one substrate of the set of substrates. Under some circumstances, the fingerprint is determined for one substrate of each subset of substrates. The fingerprint is associated with at least the first layer. A correction for the performance parameter associated with an application of a subsequent layer is then derived, the derivation being based on the determined fingerprint and the partitioning of the set of substrates.
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