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公开(公告)号：WO2019120826A1
公开(公告)日：2019-06-27
申请号：PCT/EP2018/081872
申请日：2018-11-20
Applicant: ASML NETHERLANDS B.V.
Inventor： RIJPSTRA, Manouk , LAMBREGTS, Cornelis, Johannes, Henricus , TEL, Wim, Tjibbo , ROY, Sarathi , GROUWSTRA, Cédric, Désiré , NIEN, Chi-Fei , KOU, Weitian , CHEN, Chang-Wei , SMORENBERG, Pieter, Gerardus, Jacobus
IPC: G03F7/20
Abstract: Described herein is a method for determining correction to a patterning process. The method includes obtaining a plurality of qualities of the patterning process (e.g., a plurality of parameter maps, or one or more corrections) derived from metrology data and data of an apparatus used in the patterning process, selecting, by a hardware computer system, a representative quality from the plurality of qualities, and determining, by the hardware computer system, a correction to the patterning process based on the representative quality.
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公开(公告)号：WO2021228811A1
公开(公告)日：2021-11-18
申请号：PCT/EP2021/062417
申请日：2021-05-11
Applicant: ASML NETHERLANDS B.V.
Inventor： TEL, Wim, Tjibbo , DILLEN, Hermanus, Adrianus , KEA, Marc, Jurian , WERKMAN, Roy , KOU, Weitian
IPC: G03F9/00
Abstract: The invention provides a method of determining a position of a product feature on a substrate, comprising: obtaining a plurality of position measurements of one or more product features on a substrate, wherein the measurements are referenced to either a positioning system used in displacing the substrate in between measurements or a plane parallel to the surface of the substrate; and determining a distortion component of the substrate based on the position measurements.
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公开(公告)号：WO2018072962A1
公开(公告)日：2018-04-26
申请号：PCT/EP2017/073868
申请日：2017-09-21
Applicant: ASML NETHERLANDS B.V.
Inventor： KOU, Weitian , YPMA, Alexander , HAUPTMANN, Marc , KUPERS, Michiel , HAN, Min-Sub
IPC: G05B19/418
Abstract: A lithographic process is performed on a plurality of semiconductor wafers (900; 1020). The method includes selecting one or more of the wafers as sample wafers (910-914; 1030-1034). Metrology steps (922; 1042) are performed only on the selected sample wafers. Based on metrology results (924; 046) of the selected sample product units corrections are defined for use in controlling processing of the wafers or future wafers. The selection of sample product units is based at least partly on statistical analysis of object data (902; 1006) measured in relation to the wafers. The same object data or other data can be used for grouping wafers into groups. Selecting of sample wafers can include selecting wafers (910-914; 1030-1034) that are identified by said statistical analysis as most representative of the wafers in their group. The selecting of sample wafers can include elimination of product units (916; 036) that are identified as unrepresentative.
Abstract translation: 在多个半导体晶片（900; 1020）上执行光刻工艺。 该方法包括选择一个或多个晶片作为样品晶片（910-914; 1030-1034）。 度量步骤（922; 1042）仅在所选样品晶圆上执行。 基于所选择的样品产品单元的计量结果（924; 046），定义校正用于控制晶片或未来晶片的处理。 样本产品单元的选择至少部分基于对晶片测量的对象数据（902; 1006）的统计分析。 可以使用相同的对象数据或其他数据将晶圆分组成组。 选择样本晶片可以包括选择由所述统计分析确定为最具代表性的晶片组的晶片（910-914; 1030-1034）。 选择样品晶片可以包括消除被确定为不具代表性的产品单元（916; 036）。
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公开(公告)号：WO2019063245A1
公开(公告)日：2019-04-04
申请号：PCT/EP2018/073663
申请日：2018-09-04
Applicant: ASML NETHERLANDS B.V.
Inventor： TINNEMANS, Patricius, Aloysius Jacobus , HULSEBOS, Edo, Maria , MEGENS, Henricus, Johannes, Lambertus , ERDAMAR, Ahmet Koray , VERHEES, Loek, Johannes, Petrus , ROELOFS, Willem, Seine, Christian , VAN DE VEN, Wendy, Johanna, Martina , YAGUBIZADE, Hadi , CEKLI, Hakki, Ergun , BRINKHOF, Ralph , VU, Tran, Thanh, Thuy , GOOSEN, Maikel, Robert , VAN T WESTEINDE, Maaike , KOU, Weitian , RIJPSTRA, Manouk , COX, Matthijs , BIJNEN, Franciscus, Godefridus, Casper
Abstract: A method for determining one or more optimized values of an operational parameter of a sensor system configured for measuring a property of a substrate is disclosed the method comprising: determining a quality parameter for a plurality of substrates; determining measurement parameters for the plurality of substrates obtained using the sensor system for a plurality of values of the operational parameter; comparing a substrate to substrate variation of the quality parameter and a substrate to substrate variation of a mapping of the measurement parameters; and determining the one or more optimized values of the operational parameter based on the comparing.
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公开(公告)号：WO2018197143A1
公开(公告)日：2018-11-01
申请号：PCT/EP2018/057926
申请日：2018-03-28
Applicant: ASML NETHERLANDS B.V.
Inventor： HAUPTMANN, Marc , MOS, Everhardus, Cornelis , KOU, Weitian , YPMA, Alexander , KUPERS, Michiel , YU, Hyun-Woo , HAN, Min-Sub
IPC: G03F7/20 , G05B19/418
CPC classification number: G03F7/70633 , G03F7/70525 , G05B19/41875
Abstract: A lithographic process is performed on a set of semiconductor substrates consisting of a plurality of substrates. As part of the process, the set of substrates is partitioned into a number of subsets. The partitioning may be based on a set of characteristics associated with a first layer on the substrates. A fingerprint of a performance parameter is then determined for at least one substrate of the set of substrates. Under some circumstances, the fingerprint is determined for one substrate of each subset of substrates. The fingerprint is associated with at least the first layer. A correction for the performance parameter associated with an application of a subsequent layer is then derived, the derivation being based on the determined fingerprint and the partitioning of the set of substrates.
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Patent Agency Ranking
公开(公告)号：WO2018072980A1
公开(公告)日：2018-04-26
申请号：PCT/EP2017/074643
申请日：2017-09-28
Applicant: ASML NETHERLANDS B.V.
Inventor： KOU, Weitian , YPMA, Alexander , HAUPTMANN, Marc , KUPERS, Michiel , VERGAIJ-HUIZER, Lydia, Marianna , WALLERBOS, Erik, Johannes, Maria , DELVIGNE, Erik, Henri, Adriaan , ROELOFS, Willem, Seine, Christian , CEKLI, Hakki, Ergun , VAN DER SANDEN, Stefan, Cornelis, Theodorus , GROUWSTRA, Cédric, Désiré , DECKERS, David, Frans, Simon , GIOLLO, Manuel , DOVBUSH, Iryna
Abstract: Disclosed is a method of determining a correction for a process parameter related to a lithographic process on a substrate and associated apparatuses. The lithographic process comprises a plurality of runs during each one of which a pattern is applied to one or more substrates. The method comprises obtaining pre-exposure metrology data describing a property of the substrate; obtaining post- exposure metrology data comprising one or more measurements of the process parameter having been performed on one or more previously exposed substrates; assigning to the substrate, a group membership status from a one or more groups, based on said pre-exposure metrology data; and determining the correction for the process parameter based on said group membership status and said post-exposure metrology data.
Abstract translation: 公开了一种确定与衬底和相关装置上的光刻过程有关的过程参数的校正的方法。 光刻过程包括在其中每一个过程中将图案施加到一个或多个衬底的多次运行。 该方法包括获得描述衬底特性的预曝光度量数据; 获得曝光后测量数据，所述曝光后测量数据包括已经在一个或多个先前曝光的基板上执行的所述过程参数的一个或多个测量值; 基于所述预曝光度量数据向所述衬底分配来自一个或多个组的组成员身份状态; 以及基于所述组成员状态和所述曝光后测量数据确定对所述过程参数的校正。
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公开(公告)号：WO2017060080A1
公开(公告)日：2017-04-13
申请号：PCT/EP2016/072363
申请日：2016-09-21
Applicant: ASML NETHERLANDS B.V.
Inventor： YPMA, Alexander , DECKERS, David, Frans, Simon , BIJNEN, Franciscus, Godefridus, Casper , VAN HAREN, Richard, Johannes, Franciscus , KOU, Weitian
IPC: G05B19/418 , G03F7/20
CPC classification number: G05B19/41875 , G03F7/70508 , G03F7/70525 , G03F7/70616 , G03F7/70625 , G03F7/70633 , G03F7/70641 , G03F9/7092 , G05B2219/45031 , Y02P90/22
Abstract: In a lithographic process in which a series of wafers (W(i)) are processed in different contexts. Object data (ODAT/PDAT) is received which may be for example performance data (PDAT) representing overlay measured on a set of wafers that have been processed previously. Context data (CDAT) represents a parameters of the lithographic process that vary between wafers within the set. By principal component analysis or other statistical analysis of the performance data (410), the set of wafers into two or more subsets (412). The first partitioning of the wafers and the context data are used (414) to identify one or more relevant context parameters (418), being parameters of the lithographic process that are observed to correlate most strongly with the first partitioning. The lithographic apparatus is controlled (400) for new wafers by reference to the identified relevant context parameters. Embodiments with feedback control and feedforward control are described.
Abstract translation: 在其中在不同上下文中处理一系列晶片（W（i））的光刻工艺中。 接收到对象数据（ODAT / PDAT），其可以例如表示在先前已经处理的一组晶片上测量的覆盖层的性能数据（PDAT）。 上下文数据（CDAT）表示在组内的晶片之间变化的光刻过程的参数。 通过主成分分析或性能数据（410）的其他统计分析，将该组晶片分成两个或多个子集（412）。 使用晶片和上下文数据的第一分区（414）来识别一个或多个相关的上下文参数（418），其是观察到与第一分区最强相关的光刻处理的参数。 通过参考所识别的相关上下文参数，光刻设备被控制（400）用于新的晶片。 描述了具有反馈控制和前馈控制的实施例。
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公开(公告)号：EP3879345A1
公开(公告)日：2021-09-15
申请号：EP21167888.3
申请日：2017-09-28
Applicant: ASML Netherlands B.V.
Inventor： KOU, Weitian , YPMA, Alexander , HAUPTMANN, Marc , KUPERS, Michiel , VERGAIJ-HUIZER, Lydia, Marianna , WALLERBOS, Erik, Johannes, Maria , DELVIGNE, Erik, Henri, Adriaan , ROELOFS, Willem, Seine, Christian , CEKLI, Hakki, Ergun , VAN DER SANDEN, Stefan, Cornelis, Theodorus , GROUWSTRA, Cédric, Désiré , DECKERS, David, Frans, Simon , GIOLLO, Manuel , DOVBUSH, Iryna
IPC: G03F7/20
Abstract: Disclosed is a method of determining a correction for a process parameter related to a lithographic process on a substrate and associated apparatuses. The lithographic process comprises a plurality of runs during each one of which a pattern is applied to one or more substrates. The method comprises obtaining pre-exposure metrology data describing a property of the substrate; obtaining post-exposure metrology data comprising one or more measurements of the process parameter having been performed on one or more previously exposed substrates; assigning to the substrate, a group membership status from a one or more groups, based on said pre-exposure metrology data; and determining the correction for the process parameter based on said group membership status and said post-exposure metrology data.
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公开(公告)号：EP3504593A1
公开(公告)日：2019-07-03
申请号：EP18768811.4
申请日：2018-09-04
Applicant: ASML Netherlands B.V.
Inventor： TINNEMANS, Patricius, Aloysius Jacobus , HULSEBOS, Edo, Maria , MEGENS, Henricus, Johannes, Lambertus , ERDAMAR, Ahmet Koray , VERHEES, Loek, Johannes, Petrus , ROELOFS, Willem, Seine, Christian , VAN DE VEN, Wendy, Johanna, Martina , YAGUBIZADE, Hadi , CEKLI, Hakki, Ergun , BRINKHOF, Ralph , VU, Tran, Thanh, Thuy , GOOSEN, Maikel, Robert , VAN T WESTEINDE, Maaike , KOU, Weitian , RIJPSTRA, Manouk , COX, Matthijs , BIJNEN, Franciscus, Godefridus, Casper
Abstract: A method for determining one or more optimized values of an operational parameter of a sensor system configured to measure a property of a substrate is disclosed. The method includes: determining a quality parameter for a plurality of substrates; determining measurement parameter values for the plurality of substrates using the sensor system for a plurality of values of the operational parameter; comparing a substrate to substrate variation of the quality parameter and a substrate to substrate variation of a mapping of the measurement parameter values; and determining the one or more optimized values of the operational parameter based on the comparing.
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公开(公告)号：EP3729197A1
公开(公告)日：2020-10-28
申请号：EP18807597.2
申请日：2018-11-20
Applicant: ASML Netherlands B.V.
Inventor： RIJPSTRA, Manouk , LAMBREGTS, Cornelis, Johannes, Henricus , TEL, Wim, Tjibbo , ROY, Sarathi , GROUWSTRA, Cédric, Désiré , NIEN, Chi-Fei , KOU, Weitian , CHEN, Chang-Wei , SMORENBERG, Pieter, Gerardus, Jacobus
IPC: G03F7/20
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