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    METHOD OF SEQUENCING LOTS FOR A LITHOGRAPHIC APPARATUS
    1.
    发明申请
    METHOD OF SEQUENCING LOTS FOR A LITHOGRAPHIC APPARATUS 审中-公开
    对光刻设备进行测量的方法

    公开(公告)号：WO2017198478A1

    公开(公告)日：2017-11-23

    申请号：PCT/EP2017/060749

    申请日：2017-05-05

    Applicant: ASML NETHERLANDS B.V.

    Inventor： KUPERS, Michiel ,  HENKE, Wolfgang, Helmut

    IPC: G03F7/20

    CPC classification number: G03F7/70525 ,  G03F7/705 ,  G03F7/70858 ,  G03F7/70875 ,  G03F7/70891

    Abstract: A lithographic apparatus applies patterns to substrates, the substrates being processed as a plurality of lots (A, B, C…). Each lot of substrates receives a particular layer pattern under layer- specific operating conditions. A thermal model (300) is provided for modeling and compensating one or more characteristics of thermal behavior of components within the lithographic apparatus, in response to the varying layer-specific operating conditions associated with a sequence of lots. The thermal model is also used (528, 804, 804') to simulate thermal behavior of the apparatus when processing a given collection of lots in different possible sequences. Based on comparison of the simulated thermal behavior in different sequences of lots, an optimized sequence (534) is determined. Optionally, lot sequencing rules (530) are determined and used to obtain a preferred thermal behavior when processing a collection of lots in future.

    Abstract translation: 光刻设备将图案施加到基板，基板被处理为多个批次（A，B，C ...）。 每批衬底在层特定操作条件下接收特定层图案。 提供热模型（300），用于响应于与批次序列相关联的变化的层特定操作条件，对光刻设备内的部件的热行为的一个或多个特性进行建模和补偿。 还使用热模型（528,804,804'）来模拟当以不同的可能序列处理给定的批次集合时设备的热行为。 基于不同批次序列中的模拟热行为的比较，确定优化序列（534）。 可选地，批次排序规则（530）被确定并用于在未来处理批量批次时获得优选的热行为。

    METHODS & APPARATUS FOR CONTROLLING AN INDUSTRIAL PROCESS
    2.
    发明申请
    METHODS & APPARATUS FOR CONTROLLING AN INDUSTRIAL PROCESS 审中-公开
    用于控制工业过程的方法和设备

    公开(公告)号：WO2018072962A1

    公开(公告)日：2018-04-26

    申请号：PCT/EP2017/073868

    申请日：2017-09-21

    Applicant: ASML NETHERLANDS B.V.

    Inventor： KOU, Weitian ,  YPMA, Alexander ,  HAUPTMANN, Marc ,  KUPERS, Michiel ,  HAN, Min-Sub

    IPC: G05B19/418

    Abstract: A lithographic process is performed on a plurality of semiconductor wafers (900; 1020). The method includes selecting one or more of the wafers as sample wafers (910-914; 1030-1034). Metrology steps (922; 1042) are performed only on the selected sample wafers. Based on metrology results (924; 046) of the selected sample product units corrections are defined for use in controlling processing of the wafers or future wafers. The selection of sample product units is based at least partly on statistical analysis of object data (902; 1006) measured in relation to the wafers. The same object data or other data can be used for grouping wafers into groups. Selecting of sample wafers can include selecting wafers (910-914; 1030-1034) that are identified by said statistical analysis as most representative of the wafers in their group. The selecting of sample wafers can include elimination of product units (916; 036) that are identified as unrepresentative.

    Abstract translation: 在多个半导体晶片（900; 1020）上执行光刻工艺。 该方法包括选择一个或多个晶片作为样品晶片（910-914; 1030-1034）。 度量步骤（922; 1042）仅在所选样品晶圆上执行。 基于所选择的样品产品单元的计量结果（924; 046），定义校正用于控制晶片或未来晶片的处理。 样本产品单元的选择至少部分基于对晶片测量的对象数据（902; 1006）的统计分析。 可以使用相同的对象数据或其他数据将晶圆分组成组。 选择样本晶片可以包括选择由所述统计分析确定为最具代表性的晶片组的晶片（910-914; 1030-1034）。 选择样品晶片可以包括消除被确定为不具代表性的产品单元（916; 036）。

    METHODS OF CONTROLLING A PATTERNING PROCESS, DEVICE MANUFACTURING METHOD, CONTROL SYSTEM FOR A LITHOGRAPHIC APPARATUS AND LITHOGRAPHIC APPARATUS
    3.
    发明申请
    METHODS OF CONTROLLING A PATTERNING PROCESS, DEVICE MANUFACTURING METHOD, CONTROL SYSTEM FOR A LITHOGRAPHIC APPARATUS AND LITHOGRAPHIC APPARATUS 审中-公开
    光刻设备的控制方法，设备制造方法，光刻设备和光刻设备的控制系统

    公开(公告)号：WO2017108453A1

    公开(公告)日：2017-06-29

    申请号：PCT/EP2016/080484

    申请日：2016-12-09

    Applicant: ASML NETHERLANDS B.V.

    Inventor： SLOTBOOM, Daan, Maurits ,  KUPERS, Michiel

    IPC: G03F7/20 ,  G03F9/00

    CPC classification number: G03F7/70525 ,  G03F7/705 ,  G03F7/70633 ,  G03F9/7073

    Abstract: Performance measurement targets are used to measure performance of a lithographic process after processing a number of substrates. In a set-up phase, the method selects an alignment mark type and alignment recipe from among a plurality of candidate mark types by reference to expected parameters of the patterning process. After exposing a number of test substrates using the patterning process, a preferred metrology target type and metrology recipe are selected by comparing measured performance (e.g. overlay) of performance of the patterning process measured by a reference technique. Based on the measurements of position measurement marks and performance measurement targets after actual performance of the patterning process, the alignment mark type and/or recipe may be revised, thereby co-optimizing of the alignment marks and metrology targets. Alternative run-to-run feedback strategies may also be compared during subsequent operation of the process.

    Abstract translation: 性能测量目标用于在处理多个衬底之后测量光刻工艺的性能。 在设置阶段，该方法通过参考构图过程的预期参数从多个候选标记类型中选择对准标记类型和对准配方。 在使用图案化工艺曝光多个测试衬底之后，通过比较由参考技术测量的图案化工艺的性能的测量性能（例如，重叠）来选择优选的度量目标类型和度量配方。 基于在图案化过程的实际执行之后对位置测量标记和性能测量目标的测量结果，可以修改对准标记类型和/或配方，从而共同优化对准标记和度量目标。 另外的运行反馈策略也可以在流程的后续操作中进行比较。

    METHOD OF OBTAINING MEASUREMENTS, APPARATUS FOR PERFORMING A PROCESS STEP AND METROLOGY APPARATUS
    6.
    发明申请
    METHOD OF OBTAINING MEASUREMENTS, APPARATUS FOR PERFORMING A PROCESS STEP AND METROLOGY APPARATUS 审中-公开
    获得测量值的方法，用于执行处理步骤和计量器具的装置

    公开(公告)号：WO2017194289A1

    公开(公告)日：2017-11-16

    申请号：PCT/EP2017/059474

    申请日：2017-04-21

    Applicant: ASML NETHERLANDS B.V.

    Inventor： CEKLI, Hakki, Ergun ,  ISHIBASHI, Masashi ,  VAN DE VEN, Wendy, Johanna, Martina ,  ROELOFS, Willem, Seine, Christian ,  MC NAMARA, Elliott, Gerard ,  RAHMAN, Rizvi ,  KUPERS, Michiel ,  SCHMITT-WEAVER, Emil, Peter ,  DELVIGNE, Erik, Henri, Adriaan

    IPC: G03F7/20 ,  G01N21/956 ,  G03F9/00 ,  H01L21/66

    Abstract: Measurements are obtained from locations across a substrate (W') before or after performing a lithographic process step. Examples of such measurements include alignment measurements made prior to applying a pattern to the substrate, and measurements of performance parameters such as overlay, after a pattern has been applied. A set of measurement locations (606, 606' or 606") is selected from among all possible measurement locations (302). At least a subset of the selected measurement locations are selected dynamically (202c), in response to measurements obtained using a preliminary selection (610) of measurement locations. Preliminary measurements of height can be used to select measurement locations for alignment. In another aspect of the disclosure, outlier measurements are detected based on supplementary data such as height measurements or historic data.

    Abstract translation: 在执行光刻工艺步骤之前或之后，从衬底上的位置（W'）获得测量结果。 这种测量的例子包括在将图案施加到基底之前进行对准测量，以及在施加图案之后测量性能参数，例如覆盖。 从所有可能的测量位置（302）中选择一组测量位置（606,606'或606“）。 响应于使用测量位置的初步选择（610）获得的测量，动态地选择所选测量位置的至少一个子集（202c）。 可以使用高度的初步测量来选择用于对准的测量位置。 在本公开的另一方面中，基于诸如高度测量或历史数据的补充数据来检测异常值测量。

    METHODS & APPARATUS FOR CONTROLLING AN INDUSTRIAL PROCESS
    10.
    发明公开
    METHODS & APPARATUS FOR CONTROLLING AN INDUSTRIAL PROCESS 审中-公开
    用于控制工业过程的方法和设备

    公开(公告)号：EP3312693A1

    公开(公告)日：2018-04-25

    申请号：EP16195049.8

    申请日：2016-10-21

    Applicant: ASML Netherlands B.V.

    Inventor： KOU, Weitian ,  YPMA, Alexander ,  HAUPTMANN, Marc ,  KUPERS, Michiel ,  HAN, Min-Sub

    IPC: G05B19/418

    CPC classification number: G05B19/41875 ,  G05B2219/2602 ,  G05B2219/32191 ,  G05B2219/32206 ,  G05B2219/37224 ,  G05B2219/42001 ,  G05B2219/45031 ,  Y02P90/22

    Abstract: A lithographic process is performed on a plurality of semiconductor wafers (900; 1020). The method includes selecting one or more of the wafers as sample wafers (910-914; 1030-1034). Metrology steps (922; 1042) are performed only on the selected sample wafers. Based on metrology results (924; 1046) of the selected sample product units corrections are defined for use in controlling processing of the wafers or future wafers. The selection of sample product units is based at least partly on statistical analysis of object data (902; 1006) measured in relation to the wafers. The same object data or other data can be used for grouping wafers into groups. Selecting of sample wafers can include selecting wafers (910-914; 1030-1034) that are identified by said statistical analysis as most representative of the wafers in their group. The selecting of sample wafers can include elimination of product units (916; 1036) that are identified as unrepresentative.

    Abstract translation: 在多个半导体晶片（900; 1020）上执行光刻工艺。 该方法包括选择一个或多个晶片作为样品晶片（910-914; 1030-1034）。 度量步骤（922; 1042）仅在所选样品晶圆上执行。 基于所选择的样本产品单元的计量结果（924; 1046），定义校正用于控制晶片或未来晶片的处理。 样本产品单元的选择至少部分基于对晶片测量的对象数据（902; 1006）的统计分析。 可以使用相同的对象数据或其他数据将晶圆分组成组。 选择样本晶片可以包括选择由所述统计分析确定为最具代表性的晶片组的晶片（910-914; 1030-1034）。 选择样品晶片可以包括消除被识别为不具代表性的产品单元（916; 1036）。

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