公开(公告)号：WO2010076232A2

公开(公告)日：2010-07-08

申请号：PCT/EP2009/067403

申请日：2009-12-17

Applicant: ASML NETHERLANDS B.V. ,  CRAMER, Hugo ,  HINNEN, Paul

Inventor： CRAMER, Hugo ,  HINNEN, Paul

IPC: G03F7/20

CPC classification number: G03F7/70683 ,  G03F1/14 ,  G03F1/44 ,  G03F7/70625 ,  G03F7/70641 ,  Y10T428/24802

Abstract: In order to determine whether an exposure apparatus is outputting the correct dose of radiation and a projection system of the exposure apparatus is focusing the radiation correctly, a test pattern is used on a mask for printing a specific marker onto a substrate. This marker may be measured by an inspection apparatus, such as, for example, a scatterometer to determine whether errors in focus, dose, and other related properties are present. The test pattern is arranged such that changes in focus and dose may be easily determined by measuring properties of a pattern that is exposed using the mask. The test pattern of the mask is arranged so that it gives rise to a marker pattern on the substrate surface. The marker pattern contains structures that have at least two measurable side wall angles. Asymmetry between side wall angles of a structure is related to focus (or defocus) of the exposure radiation from the exposure apparatus. The extent of defocus may thereby be determined by measuring an asymmetry in side wall angle of the printed marker pattern structures.

Abstract translation: 为了确定曝光装置是否输出正确的辐射剂量，并且曝光装置的投影系统正确地对准辐射，在掩模上使用测试图案将特定的标记印刷到基板上。 该标记可以通过诸如散射仪的检查装置来测量，以确定是否存在焦点，剂量和其它相关属性的误差。 测试图案被布置成使得可以通过测量使用掩模曝光的图案的性质容易地确定焦点和剂量的变化。 掩模的测试图案被布置成使得其在基板表面上产生标记图案。 标记图案包含具有至少两个可测量的侧壁角度的结构。 结构的侧壁角度之间的不对称性与来自曝光设备的曝光辐射的焦点（或散焦）有关。 由此可以通过测量印刷的标记图案结构的侧壁角度的不对称来确定散焦的程度。

公开(公告)号：WO2013189724A2

公开(公告)日：2013-12-27

申请号：PCT/EP2013/061370

申请日：2013-06-03

Applicant: ASML NETHERLANDS B.V.

Inventor： HINNEN, Paul ,  WANG, Shu-jin ,  LEEWIS, Christian ,  PAO, Kuo-Feng

IPC: G03F7/20

CPC classification number: G03F7/70641 ,  G03F1/42 ,  G03F1/44 ,  G03F7/70625 ,  G03F7/70683

Abstract: A method of determining focus of a lithographic apparatus has the following steps. Using the lithographic process to produce first and second structures on the substrate, the first structure has features which have a profile that has an asymmetry that depends on the focus and an exposure perturbation, such as dose or aberration. The second structure has features which have a profile that is differently sensitive to focus than the first structure and which is differently sensitive to exposure perturbation than the first structure. Scatterometer signals are used to determine a focus value used to produce the first structure. This may be done using the second scatterometer signal, and/or recorded exposure perturbation settings used in the lithographic process, to select a calibration curve for use in determining the focus value using the first scatterometer signal or by using a model with parameters related to the first and second scatterometer signals.

Abstract translation: 确定光刻设备的焦点的方法具有以下步骤。 使用光刻工艺在衬底上产生第一和第二结构，第一结构具有特征，其具有取决于焦点和曝光扰动（例如剂量或像差）的不对称性的轮廓。 第二结构具有这样的特征，其具有与第一结构不同的焦点敏感性，并且与第一结构不同的曝光扰动敏感度。 散射仪信号用于确定用于产生第一结构的聚焦值。 这可以使用第二散射仪信号和/或在光刻处理中使用的记录的曝光扰动设置来完成，以选择用于使用第一散射仪信号确定聚焦值的校准曲线，或者通过使用具有与 第一和第二散射仪信号。

公开(公告)号：WO2014082938A1

公开(公告)日：2014-06-05

申请号：PCT/EP2013/074516

申请日：2013-11-22

Applicant: ASML NETHERLANDS B.V.

Inventor： VANOPPEN, Peter ,  BROUWER, Eric ,  CRAMER, Hugo ,  DEN BESTEN, Jan ,  ENGELEN, Adrianus ,  HINNEN, Paul

IPC: G03F7/20

CPC classification number: G03F7/70058 ,  G01N21/4738 ,  G03F7/70558 ,  G03F7/70625 ,  G03F7/70641 ,  G03F7/70683

Abstract: A method of determining exposure dose of a lithographic apparatus used in a lithographic process on a substrate. Using the lithographic process to produce a first structure on the substrate, the first structure having a dose-sensitive feature which has a form that depends on exposure dose of the lithographic apparatus on the substrate. Using the lithographic process to produce a second structure on the substrate, the second structure having a dose-sensitive feature which has a form that depends on the exposure dose of the lithographic apparatus but which has a different sensitivity to the exposure dose than the first structure. Detecting scattered radiation while illuminating the first and second structures with radiation to obtain first and second scatterometer signals. Using the first and second scatterometer signals to determine an exposure dose value used to produce at least one of the first and second structures.

Abstract translation: 一种确定在光刻工艺中使用的光刻设备在衬底上的曝光剂量的方法。 使用光刻工艺在衬底上产生第一结构，第一结构具有剂量敏感特征，其具有取决于光刻设备在衬底上的曝光剂量的形式。 使用光刻工艺在衬底上产生第二结构，第二结构具有剂量敏感特征，其具有取决于光刻设备的曝光剂量但与第一结构具有不同于曝光剂量的灵敏度的形式 。 检测散射辐射，同时用辐射照射第一和第二结构，以获得第一和第二散射仪信号。 使用第一和第二散射仪信号来确定用于产生第一和第二结构中的至少一个的曝光剂量值。

公开(公告)号：WO2010130600A1

公开(公告)日：2010-11-18

申请号：PCT/EP2010/056016

申请日：2010-05-04

Applicant: ASML NETHERLANDS B.V. ,  DEN BOEF, Arie ,  CRAMER, Hugo ,  HINNEN, Paul

Inventor： DEN BOEF, Arie ,  CRAMER, Hugo ,  HINNEN, Paul

IPC: G03F7/20

CPC classification number: G03F7/70641

Abstract: A method is used to determine focus of a lithographic apparatus used in a lithographic process on a substrate. The lithographic process is used to form at least two periodic structures on the substrate. Each structure has at least one feature that has an asymmetry between opposing side wall angles that varies as a different function of the focus of the lithographic apparatus on the substrate. A spectrum produced by directing a beam of radiation onto the at least two periodic structures is measured and ratios of the asymmetries are determined. The ratios and a relationship between the focus and the side wall asymmetry for each structure is used to determine the focus of the lithographic apparatus on the substrate.

Abstract translation: 使用一种方法来确定在光刻工艺中使用的光刻设备在基板上的焦点。 光刻工艺用于在衬底上形成至少两个周期性结构。 每个结构具有至少一个特征，其具有相对的侧壁角度之间的不对称性，所述相对侧壁角度随着光刻设备在基底上的焦点的不同功能而变化。 测量通过将辐射束引导到至少两个周期性结构上产生的光谱，并且确定不对称性的比率。 使用每个结构的焦点和侧壁不对称之间的比率和关系来确定光刻设备在基底上的焦点。