公开(公告)号：WO2020035203A1

公开(公告)日：2020-02-20

申请号：PCT/EP2019/067113

申请日：2019-06-27

Applicant: ASML NETHERLANDS B.V.

Inventor： VAN DE VEN, Bastiaan, Lambertus, Wilhelmus, Marinus ,  KAUR, Chanpreet ,  VAN DE WIJDEVEN, Jeroen, Johan, Maarten ,  HUANG, Yang-Shan ,  JEUNINK, Andre, Bernardus ,  DRUZHININA, Tamara ,  VORONINA, Victoria

IPC: G03F9/00

Abstract: Disclosed is an apparatus for processing at least a first substrate in a lithographic process, which first substrate comprises a mask layer and one or more marks arranged below said mask layer, the apparatus comprising a first substrate support configured to hold the first substrate, a clearing tool configured to clear at least one of the marks by clearing an area of the mask layer above said mark while the first substrate is arranged on the first substrate support, and a measurement tool configured to determine a position of at least one of the cleared marks while the first substrate is arranged on the first substrate support.

公开(公告)号：WO2016169890A1

公开(公告)日：2016-10-27

申请号：PCT/EP2016/058544

申请日：2016-04-18

Applicant: ASML NETHERLANDS B.V.

Inventor： BASELMANS, Johannes, Jacobus, Matheus ,  DE BUCK, Pieter, Bart, Aloïs ,  VANROOSE, Nico ,  IMPONENTE, Giovanni ,  STAS, Roland, Johannes, Wilhelmus ,  KAUR, Chanpreet ,  DOWNES, James, Robert

IPC: G03F7/20 ,  G01M11/02

CPC classification number: G03F7/706 ,  G01M11/0242 ,  G01M11/0257 ,  G03F7/70866

Abstract: A method comprising illuminating a patterning device (ΜΑ') comprising a plurality of patterned regions (15a-15c) of which each patterns a measurement beam (17a-17c), projecting, with a projection system (PL), the measurement beams onto a sensor apparatus (21) comprising a plurality of detector regions (25a-25c), making a first measurement of radiation when the patterning device and the sensor apparatus are positioned in a first relative configuration, moving at least one of the patterning device and the sensor apparatus so as to change the relative configuration of the patterning device to a second relative configuration, making a second measurement of radiation when the patterning device and the sensor apparatus are positioned in the second relative configuration in which at least some of the plurality of detector regions receive a different measurement beam to the measurement beam which was received at the respective detector region in the first relative configuration and determining aberrations caused by the projection system.

Abstract translation: 一种方法，包括照亮包括多个图案化区域（15a-15c）的图案形成装置（15a-15c），图案形成区域（15a-15c）中的每一个图案化测量光束（17a-17c），用投影系统（PL）将测量光束投射到 传感器装置（21），包括多个检测器区域（25a-25c），当图案形成装置和传感器装置位于第一相对构造中时，进行辐射的第一测量，移动图案形成装置和传感器中的至少一个 设备，以便将图案形成装置的相对配置改变为第二相对配置，当图案形成装置和传感器装置位于第二相对配置中时，对辐射进行第二测量，其中多个检测器区域 接收不同的测量光束到在第一相对配置中在相应检测器区域接收的测量光束并确定 由投影系统引起的像差。