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1.发明申请
公开(公告)号：WO2020086478A1
公开(公告)日：2020-04-30
申请号：PCT/US2019/057256
申请日：2019-10-21
Applicant: ASML NETHERLANDS B.V.
Inventor： LABETSKI, Dzmitry , LAFORGE, Andrew, David , MA, Yue
Abstract: Disclosed is a source for and method of generating extreme ultraviolet radiation in which spitting of molten target material is hindered through depletion of the number of hydrogen radicals available to enter deposits of molten target material and create hydrogen bubbles therein by introducing an active gas that reacts with the hydrogen radicals.
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公开(公告)号：WO2019170503A1
公开(公告)日：2019-09-12
申请号：PCT/EP2019/054924
申请日：2019-02-28
Applicant: ASML NETHERLANDS B.V.
Inventor： MA, Yue , KEMPEN, Antonius, Theodorus, Wilhelmus , HUMMLER, Klaus, Martin , MOORS, Johannes, Hubertus, Josephina , ROMMERS, Jeroen, Hubert , VAN DE WIEL, Hubertus, Johannes , LAFORGE, Andrew, David , BRIZUELA, Fernando , WIEGGERS, Rob, Carlo , GOMES, Umesh, Prasad , NEDANOVSKA, Elena , KORKMAZ, Celal , KIM, Alexander, Downn , DUARTE RODRIGUES NUNES, Rui, Miguel , VAN DIJCK, Hendrikus, Alphonsus, Ludovicus , VAN DRENT, William, Peter , JONKERS, Peter, Gerardus , ZHU, Qiushi , YAGHOOBI, Parham , WESTERLAKEN, Jan, Steven, Christiaan , LEENDERS, Martinus, Hendrikus, Antonius , ERSHOV, Alexander, Igorevich , FOMENKOV, Igor, Vladimirovich , LIU, Fei , JACOBS, Johannes, Henricus, Wilhelmus , KUZNETSOV, Alexey, Sergeevich
Abstract: Degradation of the reflectivity of one or more reflective optical elements in a system (SO) for generating EUV radiation is reduced by the controlled introduction of a gas into a vacuum chamber (26) containing the optical element. The gas may be added to the flow of another gas such as hydrogen or alternated with the introduction of hydrogen radicals.
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Patent Agency Ranking
公开(公告)号：WO2019158492A1
公开(公告)日：2019-08-22
申请号：PCT/EP2019/053350
申请日：2019-02-12
Applicant: ASML NETHERLANDS B.V.
Inventor： XIA, Chunguang , BAEK, Jonghoon , STEWART IV, John, Tom , LAFORGE, Andrew, David , VAN HEIJNSBERGEN, Deniz , EVANS, David, Robert , DZIOMKINA, Nina, Vladimirovna , MA, Yue
Abstract: In some general aspects, a surface of a structure within a chamber of an extreme ultraviolet (EUV) light source is cleaned using a method. The method includes generating a plasma state of a material that is present at a location adjacent to a non-electrically conductive body that is within the chamber. The generation of the plasma state of the material includes electromagnetically inducing an electric current at the location adjacent the non-electrically conductive body to thereby transform the material that is adjacent the non-electrically conductive body from a first state into the plasma state. The plasma state of the material includes plasma particles, at least some of which are free radicals of the material. The method also includes enabling the plasma particles to pass over the structure surface to remove debris from the structure surface without removing the structure from the chamber of the EUV light source.
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公开(公告)号：WO2018127565A2
公开(公告)日：2018-07-12
申请号：PCT/EP2018/050278
申请日：2018-01-05
Applicant: ASML NETHERLANDS B.V.
Inventor： LABETSKI, Dzmitry , BERENDSEN, Christianus, Wilhelmus, Johannes , DUARTE RODRIGES NUNES, Rui, Miguel , ERSHOV, Alexander, Igorevich , FEENSTRA, Kornelis, Frits , FOMENKOV, Igor, Vladimirovich , HUMMLER, Klaus, Martin , JOHNKADAKSHAM, Arun , KRAUSHAAR, Matthias , LAFORGE, Andrew, David , LANGLOIS, Marc, Guy , LOGINOV, Maksim , MA, Yue , MOJAB, Seyedmohammad , NADIR, Kerim , SHATALOV, Alexander , STEWART, John, Tom, , TEGENBOSCH, Henricus, Gerardus , XIA, Chunguang
CPC classification number: H05G2/005 , G03F7/70033 , G03F7/70175 , G03F7/70916 , G03F7/70933 , H05G2/008
Abstract: A radiation source including a chamber including a plasma formation region, a radiation collector arranged in the chamber, the radiation collector configured to collect radiation emitted at the plasma formation region and to direct the collected radiation to an intermediate focus region, a debris mitigation system configured to direct a first gas flow from the intermediate focus region towards the plasma formation region, and a guiding device arranged in the chamber such that the first gas flow is directed around the guiding device. A system and apparatus for reducing contamination of an inner vessel wall of an EUV vessel is provided. The system and apparatus include inner vessel wall supplies of gas that introduce gas via a plurality of nozzles away from the inner vessel wall. The system and apparatus also optionally include an asymmetric exhaust to exhaust gas from the EUV vessel while providing flow geometries that promote a direction of gas away from the inner vessel wall and an EUV collector within the EUV vessel.
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公开(公告)号：WO2021104794A1
公开(公告)日：2021-06-03
申请号：PCT/EP2020/080478
申请日：2020-10-29
Applicant: ASML NETHERLANDS B.V.
Inventor： DE DEA, Silvia , MA, Yue , LAFORGE, Andrew, David
Abstract: An extreme ultraviolet (EUV) light source includes: a vessel configured to receive target material that emits EUV light when in a plasma state; a delivery system configured to deliver free radicals (135) to an interior of the vessel; an object (582) in the interior of the vessel; and an inhibitor substance (555). In operational use, the object accumulates debris (122) that includes the target material, the free radicals react with at least some of the debris to remove the debris from the object, and the inhibitor substance inhibits recombination of the free radicals on the object.
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公开(公告)号：WO2021008856A1
公开(公告)日：2021-01-21
申请号：PCT/EP2020/067986
申请日：2020-06-26
Applicant: ASML NETHERLANDS B.V.
Inventor： MA, Yue , VAN DE KERKHOF, Marcus, Adrianus , ZHU, Qiushi , HUMMLER, Klaus, Martin , MAYER, Peter, Matthew , HOFFMANN, Kay , LAFORGE, Andrew, David , FOMENKOV, Igor, Vladimirovich , BROWN, Daniel, John, William
Abstract: Provided is an optical element for a lithographic apparatus. The optical element includes a capping layer that includes oxygen vacancies therein. The oxygen vacancies prevent attack of the capping layer by preventing hydrogen and other species from penetrating the capping layer and underlying layers. The capping layer provides a low hydrogen recombination rate enabling hydrogen to clean the surface of the optical element. The capping layer may include an alloyed metal, a mixed metal oxide or a doped metal oxide and it may be a ruthenium capping layer that includes one or more dopants therein.
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公开(公告)号：WO2018127565A3
公开(公告)日：2018-07-12
申请号：PCT/EP2018/050278
申请日：2018-01-05
Applicant: ASML NETHERLANDS B.V.
Inventor： LABETSKI, Dzmitry , BERENDSEN, Christianus, Wilhelmus, Johannes , DUARTE RODRIGES NUNES, Rui, Miguel , ERSHOV, Alexander, Igorevich , FEENSTRA, Kornelis, Frits , FOMENKOV, Igor, Vladimirovich , HUMMLER, Klaus, Martin , JOHNKADAKSHAM, Arun , KRAUSHAAR, Matthias , LAFORGE, Andrew, David , LANGLOIS, Marc, Guy , LOGINOV, Maksim , MA, Yue , MOJAB, Seyedmohammad , NADIR, Kerim , SHATALOV, Alexander , STEWART, John, Tom, , TEGENBOSCH, Henricus, Gerardus , XIA, Chunguang
Abstract: A radiation source including a chamber including a plasma formation region, a radiation collector arranged in the chamber, the radiation collector configured to collect radiation emitted at the plasma formation region and to direct the collected radiation to an intermediate focus region, a debris mitigation system configured to direct a first gas flow from the intermediate focus region towards the plasma formation region, and a guiding device arranged in the chamber such that the first gas flow is directed around the guiding device. A system and apparatus for reducing contamination of an inner vessel wall of an EUV vessel is provided. The system and apparatus include inner vessel wall supplies of gas that introduce gas via a plurality of nozzles away from the inner vessel wall. The system and apparatus also optionally include an asymmetric exhaust to exhaust gas from the EUV vessel while providing flow geometries that promote a direction of gas away from the inner vessel wall and an EUV collector within the EUV vessel.
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