CONTROLLED FLUID FLOW FOR CLEANING AN OPTICAL ELEMENT
    2.
    发明申请
    CONTROLLED FLUID FLOW FOR CLEANING AN OPTICAL ELEMENT 审中-公开
    用于清洁光学元件的控制流体流

    公开(公告)号:WO2017023950A2

    公开(公告)日:2017-02-09

    申请号:PCT/US2016/045200

    申请日:2016-08-02

    CPC classification number: B08B5/02 G01F1/00 G03F7/70925 G03F7/70933

    Abstract: A fluid is directed toward a surface of an optical element based on a first flow pattern, the surface of the optica! element including debris and the fluid directed based on the first flow pattern moving at least some of the debris to a first stagnation region at the surface of ths opficai eiement; and the fluid is directed toward the optical element based on a second flow pattern, the fluid directed based on the second flow pattern moving at least some of the debris to a second stagnation region on the surface of the optical element, the second stagnation region and the first stagnation region being different locations at the surface of the optical element. Directing the fluid toward the surface of the optical element based on the second flow pattern removes at least some of the debris from the first stagnation region.

    Abstract translation: 基于第一流动模式将流体指向光学元件的表面,光学元件的表面 包括碎屑和基于第一流动图案引导的流体将至少一些碎片移动到第一流动区域的第一停滞区域; 并且基于第二流动图案将流体引向光学元件,基于第二流动图案指向的流体将至少一些碎片移动到光学元件的表面上的第二停滞区域,第二停滞区域和 第一停滞区域是在光学元件的表面处不同的位置。 基于第二流动模式将流体引导到光学元件的表面去除了来自第一停滞区域的至少一些碎屑。

    CLEANING A STRUCTURE SURFACE IN AN EUV CHAMBER

    公开(公告)号:WO2019158492A1

    公开(公告)日:2019-08-22

    申请号:PCT/EP2019/053350

    申请日:2019-02-12

    Abstract: In some general aspects, a surface of a structure within a chamber of an extreme ultraviolet (EUV) light source is cleaned using a method. The method includes generating a plasma state of a material that is present at a location adjacent to a non-electrically conductive body that is within the chamber. The generation of the plasma state of the material includes electromagnetically inducing an electric current at the location adjacent the non-electrically conductive body to thereby transform the material that is adjacent the non-electrically conductive body from a first state into the plasma state. The plasma state of the material includes plasma particles, at least some of which are free radicals of the material. The method also includes enabling the plasma particles to pass over the structure surface to remove debris from the structure surface without removing the structure from the chamber of the EUV light source.

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