公开(公告)号：WO2021043519A1

公开(公告)日：2021-03-11

申请号：PCT/EP2020/071954

申请日：2020-08-05

Applicant: ASML NETHERLANDS B.V.

Inventor： WERKMAN, Roy ,  LAM, Pui, Leng ,  MINGHETTI, Blandine, Marie, Andree, Richit ,  BASTANI, Vahid ,  HAJIAHMADI, Mohammadreza ,  VERGAIJ-HUIZER, Lydia, Marianna ,  SPIERING, Frans, Reinier

IPC: G03F7/20

Abstract: A method and apparatus for determining a performance of a lithographic patterning process, the apparatus or method configured for or comprising: receiving an image of a portion of a substrate, the portion of the substrate comprising a first region comprising a first feature associated with a first lithographic exposure of the substrate at a first time, and a second region comprising a second feature associated with a second lithographic exposure of the substrate at a second time, wherein the first and second regions do not overlap and wherein the first feature and the second feature form a single feature extending along at least part of the first region and at least part of the second region; and determining the performance of the lithographic patterning process based on a feature characteristic of the first and/or second exposed feature associated with a boundary between the first region and the second region.

公开(公告)号：EP3796088A1

公开(公告)日：2021-03-24

申请号：EP19198917.7

申请日：2019-09-23

Applicant: ASML Netherlands B.V.

Inventor： WERKMAN, Roy ,  LAM, Pui, Leng ,  MINGHETTI, Blandine, Marie, Andree, Richit

IPC: G03F7/20

Abstract: A method and apparatus for determining a performance of a lithographic patterning process. The method comprises receiving an image of a portion of a substrate, the portion of the substrate comprising a first region comprising first features associated with a first lithographic exposure of the substrate at a first time, and a second region comprising second features associated with a second lithographic exposure the substrate at a second time. The intended locations of the first region and the second region do not overlap. The method further comprises determining the performance of the lithographic patterning process based on one or more feature characteristics of the first and/or second exposed features at a boundary between the first region and the second region.