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    CAUSAL CONVOLUTION NETWORK FOR PROCESS CONTROL
    1.
    发明申请
    CAUSAL CONVOLUTION NETWORK FOR PROCESS CONTROL 审中-公开

    公开(公告)号：WO2022233562A1

    公开(公告)日：2022-11-10

    申请号：PCT/EP2022/060209

    申请日：2022-04-19

    Applicant: ASML NETHERLANDS B.V.

    Inventor： WERKMAN, Roy ,  ROY, Sarathi ,  MANNEKE, Daan

    IPC: G03F7/20 ,  G06N3/04 ,  G03F7/705 ,  G03F7/70525 ,  G06N3/045 ,  G06N3/08 ,  G06N7/01

    Abstract: A method for configuring a semiconductor manufacturing process, the method comprising: obtaining a plurality of first values of a first parameter based on successive measurements associated with a first operation of a process step in the semiconductor manufacturing process; using a causal convolutional neural network to determine a predicted value of a second parameter based on the first values; and using the predicted value of the second parameter in configuring a subsequent operation of the process step in the semiconductor manufacturing process.

    METHOD AND APPARATUS FOR RETICLE OPTIMIZATION
    3.
    发明申请
    METHOD AND APPARATUS FOR RETICLE OPTIMIZATION 审中-公开
    方法和装置优化

    公开(公告)号：WO2016128190A1

    公开(公告)日：2016-08-18

    申请号：PCT/EP2016/051074

    申请日：2016-01-20

    Applicant: ASML NETHERLANDS B.V.

    Inventor： TEL, Wim, Tjibbo ,  JOCHEMSEN, Marinus ,  STAALS, Frank ,  PRENTICE, Christopher ,  DEPRE, Laurent, Michel, Marcel ,  BELTMAN, Johannes, Marcus, Maria ,  WERKMAN, Roy ,  WILDENBERG, Jochem, Sebastiaan ,  MOS, Everhardus, Cornelis

    IPC: G03F1/36 ,  G03F1/70

    CPC classification number: G03F1/70 ,  G03F1/22 ,  G03F1/36 ,  G06T7/0006 ,  G06T2207/30148

    Abstract: A method includes determining topographic information of a substrate for use in a lithographic imaging system, determining or estimating, based on the topographic information, imaging error information for a plurality of points in an image field of the lithographic imaging system, adapting a design for a patterning device based on the imaging error information. In an embodiment, a plurality of locations for metrology targets is optimized based on imaging error information for a plurality of points in an image field of a lithographic imaging system, wherein the optimizing involves minimizing a cost function that describes the imaging error information. In an embodiment, locations are weighted based on differences in imaging requirements across the image field.

    Abstract translation: 一种方法包括确定用于光刻成像系统的基板的地形信息，基于地形信息确定或估计平版印刷成像系统的图像场中的多个点的成像误差信息，使设计适于 基于成像误差信息的图案形成装置。 在一个实施例中，基于用于光刻成像系统的图像场中的多个点的成像误差信息优化用于度量目标的多个位置，其中所述优化涉及最小化描述成像误差信息的成本函数。 在一个实施例中，基于图像场的成像要求的差异对位置进行加权。

    METHOD OF DETERMINING A CORRECTION FOR AT LEAST ONE CONTROL PARAMETER IN A SEMICONDUCTOR MANUFACTURING PROCESS
    4.
    发明申请
    METHOD OF DETERMINING A CORRECTION FOR AT LEAST ONE CONTROL PARAMETER IN A SEMICONDUCTOR MANUFACTURING PROCESS 审中-公开

    公开(公告)号：WO2023285066A1

    公开(公告)日：2023-01-19

    申请号：PCT/EP2022/066266

    申请日：2022-06-15

    Applicant: ASML NETHERLANDS B.V.

    Inventor： WERKMAN, Roy ,  ROY, Sarathi

    IPC: G03F7/20 ,  G01N21/956 ,  G03F9/00 ,  H01L21/66

    Abstract: Described is a method and associated computer program and apparatuses for determining a correction for at least one control parameter, said at least one control parameter for controlling a semiconductor manufacturing process so as to manufacture semiconductor devices on a substrate. The method comprises: obtaining metrology data relating to said semiconductor manufacturing process or at least part thereof; obtaining associated data relating to said semiconductor manufacturing process or at least part thereof, said associated data providing information for interpreting the metrology data; and determining said correction based on said metrology data and said associated data, wherein the determining is such that the determined correction depends on a degree to which a trend and/or event in said metrology data should be corrected based on said interpretation of said metrology data.

    METHOD AND APPARATUS FOR LITHOGRAPHIC PROCESS PERFORMANCE DETERMINATION
    5.
    发明申请
    METHOD AND APPARATUS FOR LITHOGRAPHIC PROCESS PERFORMANCE DETERMINATION 审中-公开

    公开(公告)号：WO2021043519A1

    公开(公告)日：2021-03-11

    申请号：PCT/EP2020/071954

    申请日：2020-08-05

    Applicant: ASML NETHERLANDS B.V.

    Inventor： WERKMAN, Roy ,  LAM, Pui, Leng ,  MINGHETTI, Blandine, Marie, Andree, Richit ,  BASTANI, Vahid ,  HAJIAHMADI, Mohammadreza ,  VERGAIJ-HUIZER, Lydia, Marianna ,  SPIERING, Frans, Reinier

    IPC: G03F7/20

    Abstract: A method and apparatus for determining a performance of a lithographic patterning process, the apparatus or method configured for or comprising: receiving an image of a portion of a substrate, the portion of the substrate comprising a first region comprising a first feature associated with a first lithographic exposure of the substrate at a first time, and a second region comprising a second feature associated with a second lithographic exposure of the substrate at a second time, wherein the first and second regions do not overlap and wherein the first feature and the second feature form a single feature extending along at least part of the first region and at least part of the second region; and determining the performance of the lithographic patterning process based on a feature characteristic of the first and/or second exposed feature associated with a boundary between the first region and the second region.

    TARGET STRUCTURE AND ASSOCIATED METHODS AND APPARATUS
    9.
    发明申请
    TARGET STRUCTURE AND ASSOCIATED METHODS AND APPARATUS 审中-公开

    公开(公告)号：WO2022064033A1

    公开(公告)日：2022-03-31

    申请号：PCT/EP2021/076480

    申请日：2021-09-27

    Applicant: ASML NETHERLANDS B.V.

    Inventor： TEL, Wim, Tjibbo ,  DILLEN, Hermanus, Adrianus ,  WERKMAN, Roy ,  DECKERS, David, Frans, Simon

    IPC: G03F7/20

    Abstract: Disclosed is a substrate comprising a target structure formed in at least two layers. The target structure comprises a first region comprising periodically repeating features in each of said layers measureable using optical metrology; and a second region comprising repetitions of one or more product features in each of said layers, said repetitions being sufficient for stochastic analysis to determine at least one local variation metric. The method also comprises a method of determining a correction for control of a lithographic process based on measurement of such a target structure.

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