公开(公告)号：WO2022106157A1

公开(公告)日：2022-05-27

申请号：PCT/EP2021/079524

申请日：2021-10-25

Applicant: ASML NETHERLANDS B.V.

Inventor： PARAYIL VENUGOPALAN, Syam ,  KURGANOVA, Evgenia ,  FARAMARZI, Vina

IPC: C23C16/04 ,  C23C16/48 ,  G03F7/004 ,  G03F7/16 ,  H01L21/02 ,  H01L21/027 ,  H01L29/739

Abstract: Methods of forming a patterned layer of material are disclosed. In one arrangement, a substrate having a layered structure is provided. The layered structure comprises a base layer, a support layer, and a thermally insulating layer between the base layer and the support layer. The support layer comprises a plurality of sub-units that are thermally insulated from each other. A selected portion of the support layer is selectively irradiated during a pattern-forming process. The irradiation locally drives the pattern-forming process to form a layer of material in a pattern defined by the selected portion.

公开(公告)号：WO2022043408A1

公开(公告)日：2022-03-03

申请号：PCT/EP2021/073552

申请日：2021-08-26

Applicant: ASML NETHERLANDS B.V.

Inventor： PARAYIL VENUGOPALAN, Syam ,  KAMALI, Mohammad, Reza ,  KUBIS, Michael

IPC: G06F30/398 ,  H01L21/027 ,  H01J37/32

Abstract: Systems and methods for simulating a plasma etch process are disclosed. According to certain embodiments, a method for simulating a plasma etch process may include predicting a first characteristic of a particle of a plasma in a first scale based on a first plurality of parameters; predicting a second characteristic of the particle in a second scale based on a modification of the first characteristic caused by a second plurality of parameters; and simulating an etch characteristic of a feature based on the first and the second characteristics of the particle. A multi-scale physical etch model or a multi-scale data driven model may be used to simulate the plasma etch process.

公开(公告)号：EP4394851A1

公开(公告)日：2024-07-03

申请号：EP22217347.8

申请日：2022-12-30

Applicant: ASML Netherlands B.V.

Inventor： PARAYIL VENUGOPALAN, Syam ,  WARNAAR, Patrick ,  DE JAGER, Pieter, Willem, Herman ,  JANSEN, Bas ,  JANSSENS, Stef, Marten, Johan

IPC: H01L21/67 ,  H01L21/677

CPC classification number: H01L21/67144 ,  H01L21/67259 ,  H01L21/67721

Abstract: An apparatus for die placement comprising a first stage comprising a plurality of recesses, the plurality of recesses configured to accept a plurality of donor dies; a second stage comprising a support for one or more targets; and a measurement system, functionally coupled to the first stage, and configured to: obtain locations of the plurality of donor dies in the plurality of recesses of the first stage, and based at least on the obtained locations, provide output signals to adjust the locations of the plurality of donor dies supported by the first stage to correspond to locations of the one or more targets, and based at least in part on the adjusted locations, provide output signals to place the plurality of donor dies on the one or more targets supported by the second stage by relative movement between the first stage and the second stage.

公开(公告)号：EP4343020A1

公开(公告)日：2024-03-27

申请号：EP22196803.5

申请日：2022-09-21

Applicant: ASML Netherlands B.V.

Inventor： PARAYIL VENUGOPALAN, Syam ,  DE JAGER, Pieter, Willem, Herman ,  FARAMARZI, Vina

IPC: C23C16/04 ,  G03F7/16

Abstract: The disclosure relates to methods and apparatus for forming a patterned layer of material on a substrate. In one arrangement, a selected portion of a surface of a substrate is irradiated during a deposition process. The irradiation locally drives the deposition process in the selected portion and thereby forms a patterned layer of material in a pattern defined by the selected portion. A bias voltage of alternating polarity is applied to the substrate during the irradiation to periodically drive secondary electrons generated inside the substrate by the irradiation towards the surface in the selected portion.

公开(公告)号：EP4445221A1

公开(公告)日：2024-10-16

申请号：EP22818449.5

申请日：2022-11-22

Applicant: ASML Netherlands B.V.

Inventor： ZHANG, Huaichen ,  MAAS, Ruven Cornelis ,  PARAYIL VENUGOPALAN, Syam ,  BIJLSMA, Jan Wouter

IPC: G03F7/20

公开(公告)号：EP4001455A1

公开(公告)日：2022-05-25

申请号：EP20208461.2

申请日：2020-11-18

Applicant: ASML Netherlands B.V.

Inventor： PARAYIL VENUGOPALAN, Syam ,  KURGANOVA, Evgenia ,  FARAMARZI, Vina

IPC: C23C16/04 ,  C23C16/48 ,  G03F7/004 ,  G03F7/16 ,  H01L21/02 ,  H01L21/027 ,  H01L29/739

Abstract: Methods of forming a patterned layer of material are disclosed. In one arrangement, a substrate having a layered structure is provided. The layered structure comprises a base layer, a support layer, and a thermally insulating layer. The support layer comprises a plurality of sub-units that are thermally insulated from each other. A selected portion of the support layer is selectively irradiated during a deposition process. The irradiation locally drives the deposition process to form a layer of deposited material in a pattern defined by the selected portion.

公开(公告)号：EP4357297A1

公开(公告)日：2024-04-24

申请号：EP22202853.2

申请日：2022-10-20

Applicant: ASML Netherlands B.V.

Inventor： BEUKMAN, Arjan, Johannes, Anton ,  PARAYIL VENUGOPALAN, Syam ,  AKBULUT, Duygu ,  DE JAGER, Pieter, Willem, Herman

IPC: B82Y10/00 ,  B82Y40/00 ,  C23C14/00 ,  G21K1/00 ,  H01J37/317

CPC classification number: B82Y40/00 ,  G21K1/00 ,  H01J2237/02820130101 ,  H01J2237/04720130101 ,  H01J2237/04920130101 ,  H01J2237/317520130101 ,  G03F7/00 ,  G03F7/70383

Abstract: A particle transfer system, including: a particle trap apparatus configured to trap a plurality of particles; and a particle conveyance structure configured to convey the particles in parallel from the particle trap apparatus to a substrate.
In an aspect, the particle transfer system is included in a patterning system for generating a pattern on a substrate.

公开(公告)号：EP3961473A1

公开(公告)日：2022-03-02

申请号：EP20193506.1

申请日：2020-08-29

Applicant: ASML Netherlands B.V.

Inventor： PARAYIL VENUGOPALAN, Syam ,  KAMALI, Mohammad, Reza ,  KUBIS, Michael

IPC: G06F30/398 ,  H01L21/027

Abstract: Systems and methods for simulating a plasma etch process are disclosed. According to certain embodiments, a method for simulating a plasma etch process may include predicting a first characteristic of a particle of a plasma in a first scale based on a first plurality of parameters; predicting a second characteristic of the particle in a second scale based on a modification of the first characteristic caused by a second plurality of parameters; and simulating an etch characteristic of a feature based on the first and the second characteristics of the particle. A multi-scale physical etch model or a multi-scale data driven model may be used to simulate the plasma etch process.

公开(公告)号：EP4343827A1

公开(公告)日：2024-03-27

申请号：EP22196903.3

申请日：2022-09-21

Applicant: ASML Netherlands B.V.

Inventor： PARAYIL VENUGOPALAN, Syam ,  RAVICHANDRAN, Arvind

IPC: H01L23/00 ,  H01L25/00

Abstract: A device for aligning and placing electrical components includes a first stage to support at least one first electrical component, each first electrical component having a plurality of conductive surfaces on a side opposite the first stage, a second stage to support at least one second electrical component, each second electrical component having a plurality of conductive surfaces on a side opposite the second stage, a voltage source to produce a voltage between the conductive surfaces of the first electrical components and conductive surfaces of the second electrical components, and a controller to control relative motion between the first stage and the second stage, and to align corresponding ones of the plurality of conductive surfaces of the first electrical component with corresponding ones of the plurality of conductive surfaces on the second electrical component at least partially on the basis of an electrostatic force therebetween.

公开(公告)号：EP4325229A1

公开(公告)日：2024-02-21

申请号：EP22190849.4

申请日：2022-08-17

Applicant: ASML Netherlands B.V.

Inventor： RAVICHANDRAN, Arvind ,  PARAYIL VENUGOPALAN, Syam

IPC: G01R31/312

Abstract: A device (201) for inspecting a conductive pattern (202) on a substrate (200) includes a plurality of sensor plates (204), a table configured and arranged to support the substrate , a voltage source (208), configured to generate an electric field between the sensor plates and the conductive pattern on the substrate, an actuator (206), configured to move the sensor plates relative to the substrate, a controller (210), the controller configured and arranged to identify regions having defect on the basis of changes in capacitance between the sensor plates and the substrate as the sensor plates are moved relative to the substrate.