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    DETERMINING LITHOGRAPHIC MATCHING PERFORMANCE
    1.
    发明申请
    DETERMINING LITHOGRAPHIC MATCHING PERFORMANCE 审中-公开

    公开(公告)号：WO2021047841A1

    公开(公告)日：2021-03-18

    申请号：PCT/EP2020/072473

    申请日：2020-08-11

    Applicant: ASML NETHERLANDS B.V.

    Inventor： CUI, Yingchao ,  YAGUBIZADE, Hadi ,  WEI, Xiuhong ,  SLOTBOOM, Daan, Maurits ,  PARK, Jeonghyun ,  ROY, Sarathi ,  ZHANG, Yichen ,  KAMALI, Mohammad, Reza ,  KIM, Sang-Uk

    IPC: G03F7/20

    Abstract: A method for determining lithographic matching performance includes obtaining first monitoring data E1M, E3M, E4M from recurrent monitoring for stability control for the available EUV scanners EUV1, EUV3 and EUV4. For a DUV scanner, second monitoring data D2M, is similarly obtained from recurrent monitoring (DMW, MT, OV, SM) for stability control. The EUV monitoring data E1M, E3M, E4M are in a first layout. The DUV monitoring data D2M are in a second layout. A cross-platform overlay matching performance between the first lithographic apparatus and the second lithographic apparatus is determined based on the first monitoring data and the second monitoring data. This is done by reconstructing 900, 1000 at least one of the first and second monitoring data into a common layout E1S, E3S, E4S, D2S to allow comparison 802 of the first and second monitoring data.

    MULTISCALE PHYSICAL ETCH MODELING AND METHODS THEREOF
    2.
    发明申请
    MULTISCALE PHYSICAL ETCH MODELING AND METHODS THEREOF 审中-公开

    公开(公告)号：WO2022043408A1

    公开(公告)日：2022-03-03

    申请号：PCT/EP2021/073552

    申请日：2021-08-26

    Applicant: ASML NETHERLANDS B.V.

    Inventor： PARAYIL VENUGOPALAN, Syam ,  KAMALI, Mohammad, Reza ,  KUBIS, Michael

    IPC: G06F30/398 ,  H01L21/027 ,  H01J37/32

    Abstract: Systems and methods for simulating a plasma etch process are disclosed. According to certain embodiments, a method for simulating a plasma etch process may include predicting a first characteristic of a particle of a plasma in a first scale based on a first plurality of parameters; predicting a second characteristic of the particle in a second scale based on a modification of the first characteristic caused by a second plurality of parameters; and simulating an etch characteristic of a feature based on the first and the second characteristics of the particle. A multi-scale physical etch model or a multi-scale data driven model may be used to simulate the plasma etch process.

    METHOD FOR CONTROLLING A MANUFACTURING PROCESS AND ASSOCIATED APPARATUSES
    3.
    发明申请
    METHOD FOR CONTROLLING A MANUFACTURING PROCESS AND ASSOCIATED APPARATUSES 审中-公开

    公开(公告)号：WO2020035211A1

    公开(公告)日：2020-02-20

    申请号：PCT/EP2019/067858

    申请日：2019-07-03

    Applicant: ASML NETHERLANDS B.V.

    Inventor： KAMALI, Mohammad, Reza ,  PETERSON, Brennan

    IPC: G03F7/20 ,  G05B19/418

    Abstract: Disclosed is a method for controlling a manufacturing process for manufacturing semiconductor devices, the method comprising: obtaining performance data indicative of the performance of the manufacturing process, the performance data comprising values for a performance parameter across a substrate subject to the manufacturing process; and determining a process correction for the manufacturing process based on the performance data and at least one control characteristic related to a dynamic behavior of one or more control parameters of the manufacturing process, wherein the determining step is further based on an expected stability of the manufacturing process when applying the process correction.

    A MEMBRANE ASSEMBLY
    4.
    发明申请
    A MEMBRANE ASSEMBLY 审中-公开
    膜组件

    公开(公告)号：WO2017102378A1

    公开(公告)日：2017-06-22

    申请号：PCT/EP2016/079584

    申请日：2016-12-02

    Applicant: ASML NETHERLANDS B.V.

    Inventor： BROUNS, Derk, Servatius, Gertruda ,  JANSSEN, Paul ,  KAMALI, Mohammad, Reza ,  PÉTER, Mária ,  VAN DER ZANDE, Willem, Joan ,  VAN ZWOL, Pieter-Jan ,  VLES, David, Ferdinand ,  VOORTHUIJZEN, Willem-Pieter

    IPC: G03F1/64 ,  G03F1/66

    CPC classification number: G03F1/64 ,  G03F1/66 ,  G03F7/70741 ,  G03F7/70983

    Abstract: A membrane assembly (80) for EUV lithography, the membrane assembly comprising: a planar membrane (40); a border (81) configured to hold the membrane; and a frame assembly (50) connected to the border and configured to attach to a patterning device (MA) for EUV lithography; wherein the frame assembly is connected to the border in a direction perpendicular to the plane of the membrane such that in use the frame assembly is between the border and the patterning device.

    Abstract translation: 一种用于EUV光刻的薄膜组件（80），所述薄膜组件包括：平面薄膜（40）; 边界（81），配置为保持膜; 和框架组件（50），所述框架组件（50）连接到所述边界并且被配置成附接到用于EUV光刻的图案形成装置（MA）; 其中所述框架组件在垂直于所述膜平面的方向上连接到所述边界，使得在使用中所述框架组件位于所述边界和所述图案形成装置之间。

    MULTISCALE PHYSICAL ETCH MODELING AND METHODS THEREOF
    7.
    发明公开
    MULTISCALE PHYSICAL ETCH MODELING AND METHODS THEREOF 审中-公开

    公开(公告)号：EP3961473A1

    公开(公告)日：2022-03-02

    申请号：EP20193506.1

    申请日：2020-08-29

    Applicant: ASML Netherlands B.V.

    Inventor： PARAYIL VENUGOPALAN, Syam ,  KAMALI, Mohammad, Reza ,  KUBIS, Michael

    IPC: G06F30/398 ,  H01L21/027

    Abstract: Systems and methods for simulating a plasma etch process are disclosed. According to certain embodiments, a method for simulating a plasma etch process may include predicting a first characteristic of a particle of a plasma in a first scale based on a first plurality of parameters; predicting a second characteristic of the particle in a second scale based on a modification of the first characteristic caused by a second plurality of parameters; and simulating an etch characteristic of a feature based on the first and the second characteristics of the particle. A multi-scale physical etch model or a multi-scale data driven model may be used to simulate the plasma etch process.

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