公开(公告)号：WO2013152921A1

公开(公告)日：2013-10-17

申请号：PCT/EP2013/055518

申请日：2013-03-18

Applicant: ASML NETHERLANDS B.V.

Inventor： YAKUNIN, Andrei ,  BANINE, Vadim ,  SJMAENOK, Leonid ,  SALASHCHENKO, Nikolay ,  SCACCABAROZZI, Luigi ,  LOPATIN, Aleksei

IPC: G03F1/00 ,  G03F1/62 ,  G03F7/20

CPC classification number: G03F7/70983 ,  G03F1/62

Abstract: Pellicles or films are disclosed that are suitable for use as protective covers for EUV device lithography reticles (patterning structures). The pellicles pass radiation of wavelength 5nm to 20nm whilst acting as a barrier to particulate deposits on reticles, which would otherwise lead to defects in devices patterned using the reticles. Also disclosed are reticle assemblies and lithographic apparatus including such pellicles, as well as methods for forming the pellicles. The pellicles may have a multilayer configuration, with the central region having two or more layers of silicon alternating with layers of the refractory material. Silicon oxide or nitride may be used as an interfacial layer for adhesion/anti-diffusion between the silicon and the refractory material. The pellicles are capable of self-support when tensioned over a reticle, without need of a support grid, even when sufficiently thin to permit high EUV transmissivity.

Abstract translation: 公开了适合用作EUV器件光刻掩模版（图案结构）的保护罩的薄膜或薄膜。 薄膜将波长5nm至20nm的辐射通过，同时作为掩模上的颗粒沉积物的屏障，否则会导致使用掩模版图案化的器件的缺陷。 还公开了标线组件和包括这种防护薄膜的光刻设备，以及形成防护薄膜的方法。 防护薄膜可以具有多层构造，其中心区域具有两层或多层与耐火材料层交替的硅层。 氧化硅或氮化物可以用作硅和耐火材料之间的粘合/防扩散的界面层。 即使在足够薄以允许高的EUV透射率的情况下，防护薄膜组件也可以在张紧在掩模版上时自支撑，而不需要支撑网格。

公开(公告)号：WO2012171674A1

公开(公告)日：2012-12-20

申请号：PCT/EP2012/055326

申请日：2012-03-26

Applicant: ASML NETHERLANDS B.V. ,  YAKUNIN, Andrei ,  SJMAENOK, Leonid ,  SALASHCHENKO, Nikolay ,  GLUSHKOV, Denis ,  POLKOVNIKOV, Vladimir, Nikolaevich

Inventor： YAKUNIN, Andrei ,  SJMAENOK, Leonid ,  SALASHCHENKO, Nikolay ,  GLUSHKOV, Denis ,  POLKOVNIKOV, Vladimir, Nikolaevich

IPC: G21K1/06 ,  G03F7/20 ,  G02B5/08

CPC classification number: G03F7/702 ,  B82Y10/00 ,  G02B5/0816 ,  G02B5/0875 ,  G02B5/0891 ,  G03F7/70866 ,  G03F7/70883 ,  G21K1/062 ,  G21K2201/061

Abstract: A multilayer mirror (1) for use in device lithography. The multilayer mirror configured to reflect and/or pattern radiation having a wavelength in the range of about 6.4nm to about 7.2nm. The multilayer mirror has a plurality of alternating layers (4, 6) of materials. The plurality of alternating layers of materials include first layers of materials and second layers of materials. The second layers have a higher refractive index for the radiation than the first layers. The materials of the first layers and the materials of the second layers are mutually chemically unreactive at an interface (7) therebetween at temperatures less than 300 °C. This may allow the mirrors to have a narrow boundary region of intermingled materials from alternating layers between the layers, for example of 0.5 nm or less in width, which may improve sharpness of the boundary region and improve reflectivity.

Abstract translation: 一种用于器件光刻的多层反射镜（1）。 多层反射镜被配置为反射和/或图案化波长在约6.4nm至约7.2nm范围内的辐射。 多层反射镜具有多个材料的交替层（4,6）。 多个交替的材料层包括第一层材料和第二层材料。 第二层对于辐射具有比第一层更高的折射率。 在低于300℃的温度下，第一层的材料和第二层的材料在其间的界面（7）处相互化学反应。 这可以允许反射镜具有来自层之间的交替层的混合材料的窄边界区域，例如宽度为0.5nm或更小，这可以提高边界区域的清晰度并提高反射率。