Abstract:
A lithographic projection apparatus may include a laser cleaning device. The laser cleaning device is constructed and arranged to clean a surface. The laser cleaning device includes a laser source constructed and arranged to generate radiation, and an optical element constructed and arranged to focus the radiation in a focal point in order to generate a cleaning plasma in a background gas above the surface. The laser cleaning device is further provided with a gas supply constructed and arranged to generate a jet of protection gas at a location near the plasma.
Abstract:
The present invention is concerned with an apparatus for shielding a reticle for EUV lithography. The apparatus comprises a pellicle, and at least one actuator in communication with the pellicle, the actuator being configured to induce, in use, movement of the pellicle with respect to a reticle.
Abstract:
A system for removing contaminant particles from the path of the beam of EUV radiation is provided in which at least a first AC voltage is provided to a pair of electrodes on opposite sides of the path of the beam of EUV radiation as a first stage of a regime of voltages and, as a second stage of the regime of voltages, a DC voltage is provided to the electrodes.
Abstract:
There is disclosed a lithographic apparatus provided with a spectral purity filter which is provided in the projection system (PSW) and adjacent the substrate table (WT). The spectral purity filter is preferably a membrane (14) formed of polysilicon, a multilayer material, a carbon nanotube material or graphene. The membrane may be provided with a protective capping layer, and/or a thin metal transparent layer.
Abstract:
Thermal radiation from a path of a patterned beam is detected. Particles in the path of the patterned beam heat up quickly and radiate energy at a wavelength shorter than that of a surrounding environment. Thus, by detecting the thermal radiation it is possible to detect any particles in the path of the projection beam. If particles are detected, a mask can be sealed or removed, such that particles will not adhere to it.
Abstract:
Disclosed are systems and methods for object inspection, in particular for inspection of reticles used in a lithography process. The method includes interferometrically combining a reference radiation beam with a probe radiation beam, and storing their complex field images. The complex field image of one object is then compared with that of a reference object to determine the differences. The systems and methods have particular utility in the inspection of a reticle for defects.
Abstract:
Disclosed is a suppression filter having a profile defining at least two reflective surface levels, each reflected surface level being separated by a separation distance. The separation distance is such that the reflective suppression filter is operable to substantially prevent specular reflection of radiation at a first wavelength and at a second wavelength incident on said reflective suppression filter. Also disclosed is a radiation collector, radiation source and lithographic apparatus comprising such a suppression filter, and to a method of determining a separation distance between at least two reflective surface levels of a suppression filter.
Abstract:
Disclosed is an electrostatic clamp apparatus ( 500 ) constructed to support a patterning device ( 505 ) of a lithographic apparatus, comprising a support structure against which said patterning device is supported, clamping electrodes ( 525 ) for providing a clamping force between the support structure and patterning device, and an array of capacitive sensors ( 660 ) operable to measure the shape of said patterning device.
Abstract:
Methods and systems for inspection of an object include the use of spectroscopic techniques for the detection of unwanted particles on an object's surface, based on the different responses of the unwanted particles as compared with the object to be inspected due to their different materials. Time resolved spectroscopy and/or energy resolved spectroscopy of secondary photon emission from the surface of the object can be used to obtain Raman and photoluminescence spectra. The objects to be inspected can for example be a patterning device as used in a lithographic process, for example a reticle, in which case the presence of metal, metal oxide or organic particles can be detected, for example. The methods and apparatus are highly sensitive, for example, being able to detect small particles (sub 100 nm, particularly sub 50 nm) on the patterned side of an EUV reticle.
Abstract:
An optical assembly serves the purpose of being mounted in a projection exposure apparatus (101) for EUV microlithography and comprises at least one vacuum chamber (70, 71, 68a), at least one optical element (6, 7; 65, 66; 63) arranged in the vacuum chamber (70, 71, 68a), the optical element (6, 7; 65, 66; 63) having an optical surface (18) which may be impinged upon by a useful beam bundle (3) of the projection exposure apparatus (101), and a cleaning device (72) for cleaning the optical surface (18). The cleaning device (72) is configured to perform particle cleaning of the optical surface (18) at a gas pressure within the vacuum chamber (70,71, 68a) which is higher than a vacuum pressure (p0) for performing an exposure operation with the projection exposure apparatus (101). The result is an optical assembly capable of providing optical elements having an optical surface which may be impinged upon by a useful beam bundle which can be cleaned reliably from foreign particles.