Abstract:
A method of patterning lithographic substrates, the method comprising using a free electron laser to generate EUV radiation and delivering the EUV radiation to a lithographic apparatus which projects the EUV radiation onto lithographic substrates, wherein the method further comprises reducing fluctuations in the power of EUV radiation delivered to the lithographic substrates by using a feedback-based control loop to monitor the free electron laser and adjust operation of the free electron laser accordingly.
Abstract:
A grazing incidence reflector (300) for EUV radiation includes a first mirror layer (310) and a multilayer mirror structure (320) beneath the first mirror layer. The first mirror layer reflects at least partially EUV radiation incident on the reflector with grazing incidence angles in a first range, and the first mirror layer transmits EUV radiation in a second range of incidence angles, which overlaps and extends beyond the first range of incidence angles. The multilayer mirror structure reflects EUV radiation that is incident on the reflector with grazing incidence angles in a second range that penetrates through the first mirror layer. A grazing incidence reflector can be used in a lithographic apparatus and in manufacturing a device by a lithographic process.
Abstract:
A lithographic apparatus includes a radiation source configured to produce a radiation beam, and a support configured to support a patterning device. The patterning device is configured to impart the radiation beam with a pattern to form a patterned radiation beam. A chamber is located between the radiation source and patterning device. The chamber contains at least one optical component configured to reflect the radiation beam, and is configured to permit radiation from the radiation source to pass therethrough. A membrane (44) is configured to permit the passage of the radiation beam, and to prevent the passage of contamination particles (54) through the membrane. A particle trapping structure (52) is configured to permit gas to flow along an indirect path from inside the chamber to outside the chamber. The indirect path is configured to substantially prevent the passage of contamination particles (58) from inside the chamber to outside the chamber.
Abstract:
A radiation source for generating extreme ultraviolet radiation for a lithographic apparatus has a debris mitigation device comprising a nozzle arranged at or near an intermediate focus (IF) of the beam of radiation. The nozzle serves to direct a flow of gas (330) towards the radiation source or collector optic in order to deflect particulate debris (43) emitted by the radiation source.
Abstract:
A transmissive spectral purity filter configured to transmit extreme ultraviolet radiation includes a filter part having a plurality of apertures to transmit extreme ultraviolet radiation and to suppress transmission of a second type of radiation. The apertures may be manufactured in semiconductor material such as silicon by an anisotropic etching process. The semiconductor material is provided with a hydrogen-resistant layer, such as silicon nitride Si 3 N 4 , silicon dioxide SiO 2 , or silicon carbide SiC. Roughness features may be exaggerated in the sidewalls of the apertures. The filter part may be less than about 20 μm thick with apertures about 2 μm to about 4 μm in width.
Abstract translation:配置为透射极紫外线辐射的透射光谱纯度滤光器包括具有多个孔以过滤极紫外辐射并抑制第二类辐射的透射的滤光器部分。 可以通过各向异性蚀刻工艺在诸如硅的半导体材料中制造孔。 半导体材料设置有耐氮层,例如氮化硅Si 3 N 4,二氧化硅SiO 2或碳化硅SiC。 粗糙度特征可能在孔的侧壁中被夸大。 过滤器部分可以小于约20μm厚,孔宽度大约2μm至大约4μm。
Abstract:
A free electron laser comprising: an electron source (21), a linear accelerator (22), an undulator (26), electron beam optics and a deceleration unit (28'). The electron source is operable to produce a bunched electron beam. The linear accelerator arranged to impart energy to electrons in the bunched electron beam produced by the electron source. The undulator is operable to produce a periodic magnetic field and is arranged so as to guide the bunched electron beam along a periodic path about a central axis of the undulator such that they interact with radiation in the undulator, stimulating emission of coherent radiation. The electron beam optics is arranged to direct the bunched electron beam back into the linear accelerator after it leaves the undulator so as to extract energy from electrons in the bunched electron beam. The deceleration unit is arranged to extract energy from electrons in the bunched electron beam after it has left the undulator. The deceleration unit comprises one or more resonant cavities (33), and an energy dissipation mechanism. The bunched electron beam is directed through the one or more resonant cavities so as to excite one or more resonant standing wave modes therein.
Abstract:
An EUV radiation source comprises a laser beam delivery system for delivering a beam to a target position. EUV radiation is emitted by a plasma at a position and is collected by a grazing incidence collector and focused to a desired position. A debris trap (140') is provided to prevent contamination from the plasma reaching the collector and other optical surfaces. The laser beam delivery system is designed to provide said laser radiation with a modified intensity distribution comprising substantially all the energy of the incoming radiation, but having regions (202, 204) of low intensity corresponding to the locations of parts (142, 144') of the debris trap. In an example with a rotating foil trap, a rotating, segmented intensity distribution is generated using facetted axicon elements. A central low intensity region allows bearing, drive and cooling apparatus to be mounted at the hub of the debris trap.
Abstract:
A radiation source for a lithographic apparatus uses a plurality of fiber lasers to ignite a fuel droplet at an ignition location to generate EUV radiation. The fiber lasers may be provided to emit parallel to an optical axis and a telescopic optical system is provided to focus the lasers at the ignition location, or the lasers may be directed towards the optical axis with a final focus lens being used to reduce beam waist. The lasers may be provided in two or more groups to allow them to be independently controlled and some of the lasers may be focused at a different location to provide a pre-pulse. Radiation from fiber lasers may also be combined using dichroic mirrors.
Abstract:
There is disclosed a lithographic apparatus provided with a spectral purity filter which is provided in the projection system (PSW) and adjacent the substrate table (WT). The spectral purity filter is preferably a membrane (14) formed of polysilicon, a multilayer material, a carbon nanotube material or graphene. The membrane may be provided with a protective capping layer, and/or a thin metal transparent layer.
Abstract:
A lithographic apparatus for patterning a beam of radiation and projecting it onto a substrate, comprising at least two spectral purity filters configured to reduce the intensity of radiation in the beam of radiation in at least one undesirable range of radiation wavelength, wherein the two spectral purity filters are provided with different radiation filtering structures from each other.