公开(公告)号：WO2021001109A1

公开(公告)日：2021-01-07

申请号：PCT/EP2020/065400

申请日：2020-06-04

Applicant: ASML NETHERLANDS B.V.

Inventor： PISARENCO, Maxim ,  VAN DER SCHAAR, Maurits ,  ZHANG, Huaichen ,  VAN LARE, Marie-Claire

IPC: G03F7/20

Abstract: A method for applying a deposition model in a semiconductor manufacturing process is described. The method comprises predicting a deposition profile of a substrate using the deposition model; and using the predicted deposition profile to enhance a metrology target design. The deposition model is calibrated using experimental cross-section profile information from a layer of a physical wafer. In some embodiments, the deposition model is a machine-learning model, and calibrating the deposition model comprises training the machine-learning model. The metrology target design may comprise an alignment metrology target design or an overlay metrology target design, for example.

公开(公告)号：WO2022111945A1

公开(公告)日：2022-06-02

申请号：PCT/EP2021/080243

申请日：2021-11-01

Applicant: ASML NETHERLANDS B.V.

Inventor： ZHANG, Huaichen ,  TABERY, Cyrus, Emil

IPC: G03F7/20

Abstract: Described herein is an apparatus and a method for generating a metrology mark structure that can be formed on a chip for measuring overlay characteristics induced by one or more processes performed on the chip by determining features for the metrology mark structure based on a pattern distribution. The method involves obtaining a first function to characterize an overlay fingerprint induced by a process performed on a substrate. Based on the first function, a pattern distribution is derived, the pattern distribution being indicative of a number of features (e.g., indicative of density) within a portion of the substrate. Based on the pattern distribution, physical characteristics (e.g., shape, size, etc.) of the features of the metrology mark structure is determined.

公开(公告)号：WO2020078729A1

公开(公告)日：2020-04-23

申请号：PCT/EP2019/076795

申请日：2019-10-03

Applicant: ASML NETHERLANDS B.V.

Inventor： ZHANG, Huaichen ,  VAN LARE, Marie-Claire

IPC: H01L21/306 ,  H01L21/321 ,  B24B37/00 ,  B24B49/00 ,  B24B49/04 ,  B24B49/12 ,  B24B49/16 ,  H01L21/66

Abstract: Described herein is a method for facilitating chemical mechanical polishing. The method comprises determining contact mechanics information indicative of contact pressures and friction forces between a wafer and a pad during the chemical mechanical polishing at a plurality of locations across the wafer. The contact pressures and friction forces are asymmetrically distributed across the wafer. The method also includes determining a post chemical mechanical polishing surface topography of the wafer based at least on the contact mechanics information.

公开(公告)号：EP3994526A1

公开(公告)日：2022-05-11

申请号：EP20731031.9

申请日：2020-06-04

Applicant: ASML Netherlands B.V.

Inventor： PISARENCO, Maxim ,  VAN DER SCHAAR, Maurits ,  ZHANG, Huaichen ,  VAN LARE, Marie-Claire

IPC: G03F7/20

公开(公告)号：EP4445221A1

公开(公告)日：2024-10-16

申请号：EP22818449.5

申请日：2022-11-22

Applicant: ASML Netherlands B.V.

Inventor： ZHANG, Huaichen ,  MAAS, Ruven Cornelis ,  PARAYIL VENUGOPALAN, Syam ,  BIJLSMA, Jan Wouter

IPC: G03F7/20

公开(公告)号：EP4202551A1

公开(公告)日：2023-06-28

申请号：EP21217598.8

申请日：2021-12-23

Applicant: ASML Netherlands B.V.

Inventor： ZHANG, Huaichen ,  TIMOSHKOV, Vadim Yourievich ,  TABERY, Cyrus, Emil ,  HAUPTMANN, Marc ,  KHODKO, Oleksandr

IPC: G03F7/20 ,  H01L21/66

Abstract: Disclosed is a method for determining a mechanical property of a layer applied to a substrate. The method comprises obtaining input data comprising metrology data relating to said layer and layout data relating to a layout of a pattern to be applied in said layer. A first model or first model term is used to determine a global mechanical property related to said layer based on at least said input data; and at least one second model or at least one second model term is used to predict a mechanical property distribution or associated overlay map based on said first mechanical property and said layout data, the mechanical property distribution describing the mechanical property variation over said layer.

公开(公告)号：EP4445218A1

公开(公告)日：2024-10-16

申请号：EP22808826.6

申请日：2022-10-27

Applicant: ASML Netherlands B.V.

Inventor： ZHANG, Huaichen ,  TIMOSHKOV, Vadim Yourievich ,  TABERY, Cyrus, Emil ,  HAUPTMANN, Marc ,  KHODKO, Oleksandr

IPC: G03F7/20 ,  H01L21/66

公开(公告)号：EP4231096A1

公开(公告)日：2023-08-23

申请号：EP22157745.5

申请日：2022-02-21

Applicant: ASML Netherlands B.V.

Inventor： BATISTAKIS, Chrysostomos ,  ZHANG, Huaichen

IPC: G03F7/20 ,  G06N3/08 ,  G06T7/00

Abstract: Disclosed is a method for determining a parameter of interest relating to at least one structure formed on a substrate in a manufacturing process. The method comprises obtaining metrology data relating to a plurality of measurements of the parameter of interest at a respective plurality of measurement locations on the substrate and layout data relating to a layout of a pattern to be applied to said structure, said pattern comprising said at least one structure. The method comprises determining a value for a parameter of interest at one or more locations on the substrate different from said measurement locations from said metrology data and layout data using a trained model, having been trained to be able to interpolate said metrology data using said layout data to an expected value for the parameter of interest.

公开(公告)号：EP4252073A1

公开(公告)日：2023-10-04

申请号：EP21802326.5

申请日：2021-11-01

Applicant: ASML Netherlands B.V.

Inventor： ZHANG, Huaichen ,  TABERY, Cyrus, Emil

IPC: G03F7/20

公开(公告)号：EP3640972A1

公开(公告)日：2020-04-22

申请号：EP18201087.6

申请日：2018-10-18

Applicant: ASML Netherlands B.V.

Inventor： ZHANG, Huaichen ,  VAN LARE, Marie-Claire

IPC: H01L21/306 ,  H01L21/321 ,  B24B37/00 ,  B24B49/00 ,  B24B49/04 ,  B24B49/12 ,  B24B49/16 ,  H01L21/66

Abstract: Described herein is a method for facilitating chemical mechanical polishing. The method comprises determining contact mechanics information indicative of contact pressures and friction forces between a wafer and a pad during the chemical mechanical polishing at a plurality of locations across the wafer. The contact pressures and friction forces are asymmetrically distributed across the wafer. The method also includes determining a post chemical mechanical polishing surface topography of the wafer based at least on the contact mechanics information.