公开(公告)号：KR20100103425A

公开(公告)日：2010-09-27

申请号：KR20100022399

申请日：2010-03-12

Applicant: ASML NETHERLANDS BV

Inventor： STAVENGA MARCO KOERT ,  SHULEPOV SERGEI ,  STEFFENS KOEN ,  VAN LIEROP MATHEUS ANNA KAREL ,  DAVID SAMUEL BERTRAND DOMINIQUE ,  BESSEMS DAVID

IPC: H01L21/027 ,  H01L21/683 ,  H01L21/687

CPC classification number: G03F7/70716 ,  G03F7/70341 ,  G03F7/707 ,  G03F7/70866 ,  H01L21/68 ,  H01L21/68735 ,  G03F7/2041 ,  H01L21/682

Abstract: PURPOSE: A substrate table, an immersion lithography apparatus, and a method for manufacturing a device are provided to reduce the generation of defects on images by minimizing bubbles in the immersion lithography apparatus. CONSTITUTION: A pre-set size substrate(W) is contained in a recess(20). The recess includes a supporting region supporting the lower surface of the substrate and an edge. The edge is adjacently arranged to the edge of the substrate. A fluid draining system drains fluid from a gap(26) between the edges of the substrate and the recess. The fluid draining system includes a first duct(32) and a second duct(42) which are open toward the inside gap.

Abstract translation: 目的：提供一种衬底台，浸没式光刻设备及其制造方法，用于通过使浸没式光刻设备中的气泡最小化来减少图像缺陷的产生。 构成：预定尺寸的基板（W）容纳在凹部（20）中。 所述凹部包括支撑所述基板的下表面的支撑区域和边缘。 边缘相邻地布置到基板的边缘。 流体排放系统从衬底的边缘和凹部之间的间隙（26）排出流体。 流体排放系统包括朝向内部间隙开放的第一管道（32）和第二管道（42）。

公开(公告)号：JP2013038413A

公开(公告)日：2013-02-21

申请号：JP2012158755

申请日：2012-07-17

Applicant: Asml Netherlands Bv ,  エーエスエムエル ネザーランズ ビー.ブイ.

Inventor： BESSEMS DAVID ,  EUMMELEN ERIK HENRICUS EGIDIUS CATHARINA ,  CORTILE ROGER HENDRIKUS MAGDALENA ,  RIEPEN MICHAEL ,  ROPS CORNELIUS MARIA

IPC: H01L21/027 ,  G03F7/20

CPC classification number: G03F7/70341 ,  Y10T137/2931

Abstract: PROBLEM TO BE SOLVED: To provide a lithographic apparatus in which the likelihood of bubble inclusion in an immersion liquid is at least reduced.SOLUTION: A fluid handling structure for a lithographic apparatus comprises at a boundary of a space configured to contain immersion fluid to a region external to the fluid handling structure: a meniscus pinning feature to resist passage of immersion fluid in a radially outward direction from the space; a gas supply opening at least partly surrounding and radially outward of the meniscus pinning feature; and optionally a gas recovery opening radially outward of the gas supply opening. The gas supply opening, or the gas recovery opening, or both the gas supply opening and the gas recovery opening, has an open area per meter length which has a variation around the space.

Abstract translation: 要解决的问题：提供其中至少减少浸入液体中气泡夹杂的可能性的光刻设备。 解决方案：用于光刻设备的流体处理结构包括在被配置为将浸没流体包含在流体处理结构外部的区域的空间的边界处：弯月面钉扎特征，以阻止浸没流体沿径向向外的方向 从空间; 至少部分地围绕所述弯液面钉扎特征并径向向外的气体供应开口; 以及任选的气体回收开口，其在气体供给开口的径向外侧。 气体供给开口或气体回收开口，或者气体供给口和气体回收开口两者都具有围绕空间变化的每米长度的开放面积。 版权所有（C）2013，JPO＆INPIT

公开(公告)号：JP2010219510A

公开(公告)日：2010-09-30

申请号：JP2010029605

申请日：2010-02-15

Applicant: Asml Netherlands Bv ,  エーエスエムエル ネザーランズ ビー.ブイ.

Inventor： STAVENGA MARCO KOERT ,  KEMPER NICOLAAS R ,  ANTONIUS LEENDERS MARTINUS HENDRIKUS ,  LIEBREGTS PAULUS MARTINUS MARIA ,  HUBERTUS MULKENS JOHANNES C ,  EUMMELEN ERIK HENRICUS EGIDIUS CATHARINA ,  MOERMAN RICHARD ,  RIEPEN MICHEL ,  SERGEI SHULEPOV ,  BRANDS GERT-JAN GERARDUS JOHANEES THOMAS ,  STEFFENS KOEN ,  CROMWIJK JAN WILLEM ,  MEIJERS RALPH JOSEPH ,  FABRIZIO EVANGELISTA ,  BESSEMS DAVID ,  LI HUA ,  JOCHEMSEN MARINUS ,  GUNTHER PIETER LEIN JOSEPH ,  BELL FRANCISCUS WILHELMUS ,  WITBERG ERIK ,  SMITS MARCUS AGNES JOHANNES ,  MA ZHENHUA

IPC: H01L21/027 ,  G03F7/20

CPC classification number: G03F7/70341

Abstract: PROBLEM TO BE SOLVED: To provide a lithographic apparatus, a method of controlling the same, and a device manufacturing method, wherein defects of imaging are reduced or eliminated. SOLUTION: The method includes the steps of: moving a substrate table supporting a substrate relative to a projection system; and adjusting the scanning speed between the substrate table and the projection system during imaging of a target within a predefined area at or near an edge of the substrate, and/or adjusting the stepping speed between adjacent target positions in a predefined area at or near the edge of the substrate. The step of adjusting the scanning and/or stepping speed may comprise lowering the speed. The projection system is configured to project a patterned beam of radiation onto a target portion of the substrate. COPYRIGHT: (C)2010,JPO&INPIT

Abstract translation: 要解决的问题：提供一种光刻设备，其控制方法以及减少或消除成像缺陷的器件制造方法。 解决方案：该方法包括以下步骤：相对于投影系统移动支撑衬底的衬底台; 以及在所述基板的边缘处或附近的预定区域内的目标成像期间调整所述基板台和所述投影系统之间的扫描速度，和/或调整所述基板的边缘处或其附近的预定区域中的相邻目标位置之间的步进速度 衬底的边缘。 调整扫描和/或步进速度的步骤可以包括降低速度。 投影系统被配置为将图案化的辐射束投影到基板的目标部分上。 版权所有（C）2010，JPO＆INPIT

公开(公告)号：JP2010103532A

公开(公告)日：2010-05-06

申请号：JP2009237996

申请日：2009-10-15

Applicant: Asml Netherlands Bv ,  エーエスエムエル ネザーランズ ビー.ブイ.

Inventor： CLEMENS JOHANNES GERARDUS VAN DEN DUNGEN ,  DANNY MARIA HUBERTUS PHILIPS ,  STEFFENS KOEN ,  GUNTHER WILFRED MATHIJS ,  BESSEMS DAVID

IPC: H01L21/027 ,  H01L21/683

CPC classification number: G03F7/70341

Abstract: PROBLEM TO BE SOLVED: To provide a fluid handling system which reduces the possibility that, for example, bubbles are formed and/or invade into a liquid immersion space. SOLUTION: In a fluid handling structure, a means for dealing with and/or preventing the formation of bubbles in a liquid immersion liquid is taken particularly in relation to the dimension and intervals of the array of the opening on the bottom surface of the fluid handling structure. A lithography apparatus is also provided. COPYRIGHT: (C)2010,JPO&INPIT

Abstract translation: 要解决的问题：提供一种降低例如气泡形成和/或侵入液浸空间的可能性的流体处理系统。 解决方案：在流体处理结构中，特别是关于液浸液体中的开口阵列的尺寸和间隔的处理和/或防止在液浸液体中形成气泡的装置， 流体处理结构。 还提供了一种光刻设备。 版权所有（C）2010，JPO＆INPIT

公开(公告)号：JP2011176308A

公开(公告)日：2011-09-08

申请号：JP2011025713

申请日：2011-02-09

Applicant: Asml Netherlands Bv ,  エーエスエムエル ネザーランズ ビー.ブイ.

Inventor： RIEPEN MICHEL ,  EUMMELEN ERIK HENRICUS EGIDIUS CATHARINA ,  VAN DER GRAAF SANDRA ,  CORTIE ROGIER HENDRIKUS MAGDALENA ,  KANEKO TAKESHI ,  DZIOMKINA NINA VLADIMIROVNA ,  VAN BOKHOVEN LAURENTIUS JOHANNES ADRIANUS ,  EVANGELISTA FABRIZIO ,  BESSEMS DAVID ,  ROPS CORNELIUS MARIA ,  VERDONCK ADRIANUS MARINUS ,  KATE NICOLAAS TEN

IPC: H01L21/027 ,  G03F7/20

CPC classification number: G03F7/70341

Abstract: PROBLEM TO BE SOLVED: To provide a fluid handling structure for minimizing or preventing the sealing of bubbles within an immersion solution of an immersion lithographic apparatus. SOLUTION: A fluid handling structure is for a lithographic apparatus. At a boundary from a space configured to include an immersion fluid to a region external to the fluid handling structure, the fluid handling structure successively has an extractor having at least one opening arranged in a first line that, in use, is directed towards a substrate and/or a table and a liquid manipulator on a surface that, in use, faces the substrate and/or table to reduce the chance of droplets on the surface from coalescing. COPYRIGHT: (C)2011,JPO&INPIT

Abstract translation: 要解决的问题：提供一种流体处理结构，用于使浸没式光刻设备的浸液中的气泡密封最小化或防止。 解决方案：流体处理结构用于光刻设备。 在从被构造为将浸没流体包括在流体处理结构外部的区域的空间的边界处，流体处理结构依次具有提取器，其具有布置在第一线中的至少一个开口，在使用中，至少一个开口指向基板 和/或在使用中面向基底和/或台面的表面上的桌子和液体操纵器，以减少表面上的液滴的聚结机会。 版权所有（C）2011，JPO＆INPIT

公开(公告)号：JP2011159971A

公开(公告)日：2011-08-18

申请号：JP2011014673

申请日：2011-01-27

Applicant: Asml Netherlands Bv ,  エーエスエムエル ネザーランズ ビー.ブイ.

Inventor： DIREKS DANIEL JOSEPH MARIA ,  EUMMELEN ERIK HENRICUS EGIDIUS CATHARINA ,  CLEMENS JOHANNES GERARDUS VAN DEN DUNGEN ,  MAIKEL ADRIANUS CORNELIS SCHEPERS ,  SERGEI SHULEPOV ,  PIETER MULDER ,  BESSEMS DAVID ,  BARAGONA MARCO

IPC: H01L21/027 ,  G03F7/20

CPC classification number: G03B27/52

Abstract: PROBLEM TO BE SOLVED: To provide a lithographic apparatus for preventing bubbles from entering a projection beam during image formation. SOLUTION: In a liquid confinement structure of an immersion lithographic apparatus, an elongate continuous opening forms an outlet for supplying liquid to a space beneath a projection system. The elongate slit forms a region of high shear and pressure gradient that deflects bubbles away from an image field. COPYRIGHT: (C)2011,JPO&INPIT

Abstract translation: 要解决的问题：提供一种用于在图像形成期间防止气泡进入投影光束的光刻设备。 解决方案：在浸没式光刻设备的液体限制结构中，细长的连续开口形成用于将液体供应到投影系统下方的空间的出口。 细长狭缝形成高剪切和压力梯度的区域，其使气泡偏离图像场。 版权所有（C）2011，JPO＆INPIT

公开(公告)号：JP2010219525A

公开(公告)日：2010-09-30

申请号：JP2010048479

申请日：2010-03-05

Applicant: Asml Netherlands Bv ,  エーエスエムエル ネザーランズ ビー.ブイ.

Inventor： STAVENGA MARCO KOERT ,  SERGEI SHULEPOV ,  STEFFENS KOEN ,  LIEROP MATHIEUS ANNA KAREL VAN ,  DAVID SAMUEL BERTRAND DOMINIQUE ,  BESSEMS DAVID

IPC: H01L21/027 ,  G03F7/20

CPC classification number: G03F7/70716 ,  G03F7/70341 ,  G03F7/707 ,  G03F7/70866 ,  H01L21/68 ,  H01L21/68735

Abstract: PROBLEM TO BE SOLVED: To reduce a possibility or an influence of bubbling in an immersion lithographic apparatus. SOLUTION: A substrate table for an immersion lithographic apparatus has a recessed portion constituted to store a substrate of given size, and a fluid extraction system configured to extract a fluid from a gap between an edge of the substrate and an edge of the recessed portion, wherein the fluid extraction system is characterized in that the flow rate of the fluid extracted from a local part of the gap is larger than the flow rate of the fluid extracted from other parts of the gap. COPYRIGHT: (C)2010,JPO&INPIT

Abstract translation: 要解决的问题：降低浸没式光刻设备中冒泡的可能性或影响。 解决方案：用于浸没式光刻设备的衬底台具有构造成存储给定尺寸的衬底的凹部，以及被配置为从衬底的边缘和边缘的间隙中提取流体的流体抽出系统 凹部，其中，所述流体抽出系统的特征在于，从所述间隙的局部部分提取的流体的流量大于从所述间隙的其它部分提取的流体的流量。 版权所有（C）2010，JPO＆INPIT

公开(公告)号：JP2013065829A

公开(公告)日：2013-04-11

申请号：JP2012175659

申请日：2012-08-08

Applicant: Asml Netherlands Bv ,  エーエスエムエル ネザーランズ ビー.ブイ.

Inventor： BESSEMS DAVID ,  ROPS CORNELIUS MARIA

IPC: H01L21/027

CPC classification number: G03F7/70341 ,  Y10T137/8593

Abstract: PROBLEM TO BE SOLVED: To provide a lithographic apparatus in which mixing of gas from and external to a fluid handling structure is at least partly reduced or prevented.SOLUTION: A fluid handling structure for a lithographic apparatus has, at a boundary of a space configured to contain immersion fluid to a region external to the fluid handling structure, a gas supply opening provided radially outward of the space, a fluid recovery opening provided radially outward of the gas supply opening, and a damper surface extending at least 0.5 mm radially outward from the fluid recovery opening along the undersurface of the fluid handling structure.

Abstract translation: 要解决的问题：提供一种光刻设备，其中至少部分地减少或防止流体处理结构中和外部的气体的混合。 解决方案：用于光刻设备的流体处理结构在被配置为将浸没流体包含在流体处理结构外部的区域的边界处具有在该空间的径向外侧设置的气体供给开口，流体回收 设置在气体供给开口的径向外侧的开口部以及沿着流体处理结构的下表面沿流体回收开口径向向外延伸至少0.5mm的阻尼器表面。 版权所有（C）2013，JPO＆INPIT

公开(公告)号：JP2012089843A

公开(公告)日：2012-05-10

申请号：JP2011226698

申请日：2011-10-14

Applicant: Asml Netherlands Bv ,  エーエスエムエル ネザーランズ ビー.ブイ.

Inventor： BESSEMS DAVID ,  ROGIER HENDRIX MAGDALENA CORTIE ,  MARKUS JOHANNES VAN DER ZANDEN ,  ROPS CORNELIUS MARIA ,  PAUL WILLEMS ,  VAN DE WINKEL JIMMY MATHEUS WILHELMUS ,  EUMMELEN ERIK HENRICUS EGIDIUS CATHARINA

IPC: H01L21/027

CPC classification number: G03F7/70341

Abstract: PROBLEM TO BE SOLVED: To provide a lithography device, for example, in which possibility of creating air bubbles is at least reduced.SOLUTION: A fluid handling structure for a lithography device has one or more meniscus nailing characteristic parts for resisting passage of a liquid-immersion fluid from a space outward in a radial direction at a boundary from a space for housing the liquid-immersion fluid to a region outside the fluid handling structure, a gas supply opening outside the one or more meniscus nailing characteristic parts in the radial direction, and at least one gas recovery opening located outside the one or more meniscus nailing characteristic parts in the radial direction and at least partially surrounding the gas supply opening.

Abstract translation: 要解决的问题：提供例如至少减少产生气泡的可能性的光刻设备。 解决方案：用于光刻装置的流体处理结构具有一个或多个弯月面钉钉特征部件，用于抵抗液浸液体从用于容纳浸液的空间的边界处的径向向外的空间的通道 流体到流体处理结构外部的区域，在径向上的一个或多个月牙形钉钉特征部分外侧的气体供给开口，以及位于径向方向上的一个或多个弯液面钉钉特征部分外侧的至少一个气体回收开口，以及 至少部分地围绕气体供应开口。 版权所有（C）2012，JPO＆INPIT

公开(公告)号：JP2009117832A

公开(公告)日：2009-05-28

申请号：JP2008282841

申请日：2008-11-04

Applicant: Asml Netherlands Bv ,  エーエスエムエル ネザーランズ ビー.ブイ.

Inventor： VAN DER HEIJDEN MARCUS THEODOO ,  STAVENGA MARCO KOERT ,  WONG PATRICK ,  VAN DEN BOGAARD FREDERICK JOHA ,  DE VRIES DIRK ,  BESSEMS DAVID ,  MYCKE JACQUES ROGER ALICE

IPC: H01L21/027 ,  G03F7/20

CPC classification number: G03F7/70916 ,  G03F7/11 ,  G03F7/70341

Abstract: PROBLEM TO BE SOLVED: To provide a substrate for reducing a contamination source to be used for a lithography projection device. SOLUTION: The substrate W comprises a sealing coating 106 covering at least part of a first interface between two layers 100, 102 on the substrate or between each layer and the substrate without extending to a central portion of the substrate. The sealing coating is used for providing the substrate which is used for the lithography projection device for reducing a risk of contaminating one or more components of immersion liquid and a lithography device, and a device manufacturing method. COPYRIGHT: (C)2009,JPO&INPIT

Abstract translation: 要解决的问题：提供一种用于减少用于光刻投影装置的污染源的基板。 解决方案：衬底W包括密封涂层106，其覆盖衬底上的两个层100,102之间或每个层与衬底之间的第一界面的至少一部分而不延伸到衬底的中心部分。 密封涂层用于提供用于光刻投影装置的基板，用于降低污染浸入液体的一种或多种组分和光刻装置的风险，以及装置制造方法。 版权所有（C）2009，JPO＆INPIT