Abstract:
PROBLEM TO BE SOLVED: To provide a method of performing a tilted focus testing and an exposure apparatus, capable of easily giving a tilt to the projection beam with a pattern using a tilting device, and capable of easily performing tilted defocus testing, and to provide a device manufactured in accordance with it. SOLUTION: In order to tilt the at least one reflective device to the second orientation, a device for tilting is used. A step for supplying the second projection beam with a tilt to the above first projection beam, and a step for producing a second projected radiation beam onto the target object, are provided along with a step for determining a lateral shift of the first and second projected radiation beams on the target object and, determining from the lateral shift a defocus of the target object with respect to the projected radiation beam. COPYRIGHT: (C)2006,JPO&NCIPI
Abstract:
PROBLEM TO BE SOLVED: To provide a positioning system for a lithographic projector in which accuracy of alignment and/or hardness is improved. SOLUTION: The positioning system for a lithographic apparatus has a positioning radiation source 1, a detection system that has a first detector channel and a second detector channel, and a position determining unit in communication with the detection system. The position determining unit processes information from the first and second detector channels in combination, to determine a position of a positioning mark on a first object relative to a reference position on a second object based on the combined information. COPYRIGHT: (C)2005,JPO&NCIPI
Abstract:
PROBLEM TO BE SOLVED: To provide an alignment system for a lithography projecting apparatus in which accuracy of positioning and/or robust properties is improved.SOLUTION: An alignment system for a lithographic apparatus comprises: a positioning radiation source 1; a detection system having a first detector channel and a second detector channel; and a position determining unit that communicates with the detection system. The position determining unit processes information from the first and second detector channels in combination, and determines a position of a positioning mark on a first object relative to a reference position on a second object, based on the combined information.
Abstract:
PROBLEM TO BE SOLVED: To provide a substrate table configured so as to support a substrate comprising at least one substrate mark. SOLUTION: The at least one substrate mark has a position that can be measured using an alignment system. The substrate table comprises an optical system having a magnification factor that is not 1 in order to provide the image of the at least one substrate mark to be measured by the alignment system. COPYRIGHT: (C)2006,JPO&NCIPI
Abstract:
PROBLEM TO BE SOLVED: To provide a marker structure to be used by a lithography system which is equipped with a first radiant source to produce a radiation having a first wavelength and a positioning system which includes a second radiant source to produce a radiation having a second wavelength. SOLUTION: The second wavelength is larger than the first wavelength. The marker structure is equipped with the first layer and the second layer. The second layer directly or indirectly exists on the first layer. The first layer has a first periodic structure, and the second layer has a second periodic structure. At least the other periodic structure has a plurality of features having a size smaller than 400 nm at least in one direction. The combination of the first periodic structure and the second periodic structure forms a diffraction structure which is composed to be illuminated by a radiation having the second wavelength. COPYRIGHT: (C)2006,JPO&NCIPI
Abstract:
PROBLEM TO BE SOLVED: To provide an alignment system for a lithography projecting device, with the accuracy of positioning and/or robust properties improved. SOLUTION: An alignment system for a lithographic apparatus has a source of alignment radiation, a detection system that has a first detector channel and a second detector channel, and a position determining unit that communicates with the detection system. The position-determining unit processes information from the first and second detector channels in combination and determines the position of an alignment mark on a first object relative to a reference position on a second object, based on the combined information. COPYRIGHT: (C)2009,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide an alignment system for lithographic projection equipment in which the accuracy and/or robust property of alignment are improved. SOLUTION: The alignment system of the lithographic equipment includes an aligning radiation source 1, a detection system having a first detector channel and a second detector channel, and an alignment unit communicated with the detection system. The alignment unit determines the position of an alignment mark on a first object for a reference position on a second object based on a combined information that is combined and processed the information from the first and second detection channels. COPYRIGHT: (C)2008,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide an apparatus and method for improved latent overlay metrology. SOLUTION: A scatterometer and an overexposed overlay target are used to obtain more robust overlay measurement. The overlay measurement and the exposure can simultaneously be performed. COPYRIGHT: (C)2006,JPO&NCIPI
Abstract:
PROBLEM TO BE SOLVED: To provide a method and an apparatus which enables more accurate alignment in a smaller time. SOLUTION: The method of producing a marker (11) on a substrate (W) includes projecting a patterned beam on a layer (R) of resist disposed on the substrate (W) in a lithographic apparatus to create a latent marker (10); and locally heating the substrate (W) at the marker location in the lithographic apparatus to transform the latent marker (10) into a detectable marker (11). COPYRIGHT: (C)2006,JPO&NCIPI
Abstract:
In a lithographic apparatus, a reference grating 11 mounted on the wafer table WT is illuminated with a measurement beam 20 incident in a direction independent of wafer table tilt. The diffraction orders are detected by detector 30 and used to determine the lateral shift in the wafer table resulting from a non-zero Abbe arm, and hence the Abbe arm, for calibration purposes. The detector 30 may be a detector also used for off-axis alignment of the wafer and wafer table.