Immersion lithography
    2.
    发明专利
    Immersion lithography 有权
    倾斜图

    公开(公告)号:JP2009177162A

    公开(公告)日:2009-08-06

    申请号:JP2008328877

    申请日:2008-12-25

    CPC classification number: G03F7/70916 G03F7/70341 G03F7/70608

    Abstract: PROBLEM TO BE SOLVED: To reduce the presence of particles in an immersion system, and/or at least obtain information indicative of a defect so that it may be better understood with the aim of reducing its occurrence or number.
    SOLUTION: A method is disclosed that obtains information related to a defect 110 present during irradiation of a substrate W coated with a layer of radiation sensitive material using immersion lithography. The method includes irradiating an area of the radiation sensitive material with a non-patterned radiation beam, the area being irradiated with a dose which is sufficient for the radiation sensitive material to be substantially removed during subsequent development of the radiation sensitive material if the radiation sensitive material is a positive radiation sensitive material, or with a dose which is sufficient for the radiation sensitive material to be substantially insoluble during subsequent development of the radiation sensitive material if the radiation sensitive material is a negative radiation sensitive material. The method further includes developing the radiation sensitive material and obtaining information at least indicative of the topography of radiation sensitive material remaining on the substrate after the radiation sensitive material has been developed in order to obtain information related to the defect.
    COPYRIGHT: (C)2009,JPO&INPIT

    Abstract translation: 要解决的问题:为了减少沉浸系统中的颗粒的存在,和/或至少获得指示缺陷的信息,以便可以更好地理解为了减少其发生或数量。 解决方案:公开了一种方法,其获得与使用浸渍光刻法涂覆有辐射敏感材料层的基板W的照射期间存在的缺陷110相关的信息。 该方法包括用未图案化的辐射束照射辐射敏感材料的区域,如果辐射敏感材料的辐射敏感材料的后续显影期间,该辐射敏感材料的辐射敏感材料的辐射敏感材料的辐照敏感材料的辐射敏感材料的辐照敏感材料 材料是正的辐射敏感材料,或者如果辐射敏感材料是负辐射敏感材料,则辐射敏感材料在辐射敏感材料的后续显影期间足以使辐射敏感材料基本上不溶的剂量。 该方法还包括开发辐射敏感材料并获得至少指示辐射敏感材料已被开发之后剩余在基底上的辐射敏感材料的形貌的信息,以获得与该缺陷有关的信息。 版权所有(C)2009,JPO&INPIT

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