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    Dispenser for small amount of resist
    2.
    发明专利
    Dispenser for small amount of resist 有权
    小额抵债的分配者

    公开(公告)号：JP2009027165A

    公开(公告)日：2009-02-05

    申请号：JP2008184066

    申请日：2008-07-15

    Applicant: Asml Netherlands Bv ,  エーエスエムエル ネザーランズ ビー.ブイ.

    Inventor： CORNELIS MARTIJN JOHANNES RICK ,  WONG PATRICK ,  DAVERVELD RALF MARTINUS MARINU ,  BEERENS JOS

    IPC: H01L21/027 ,  B05C5/00 ,  B05C11/10

    CPC classification number: H01L21/6715

    Abstract: PROBLEM TO BE SOLVED: To provide a dispenser system for small amount of resist which can reduce contamination and/or defects of patterns. SOLUTION: A dispenser for small amount of resist includes a pressure operated valve capable of reverse aspiration which can be connected with a controller output portion which opens and closes a valve to control supply of liquid to a nozzle of a spin coater and the spin coater, wherein the dispenser comprises a holder for a bottle for pressurizing fluid in the bottle by applying gas pressure. The dispenser is suitable for using with a bottle which is filled with 100 ml to 300 ml of resist sample in advance. COPYRIGHT: (C)2009,JPO&INPIT

    Abstract translation: 要解决的问题：提供可以减少图案污染和/或缺陷的少量抗蚀剂的分配系统。 解决方案：用于少量抗蚀剂的分配器包括能够反向抽吸的压力操作阀，其可与控制器输出部分连接，该控制器输出部分打开和关闭阀门以控制向旋涂机的喷嘴供应液体， 旋转涂布机，其中分配器包括用于通过施加气体压力来对瓶中的流体加压的瓶的保持器。 分配器适用于预先用填充有100ml至300ml抗蚀剂样品的瓶子使用。 版权所有（C）2009，JPO＆INPIT

    Method of manufacturing lithographic device, lithographic cell, and computer program
    3.
    发明专利
    Method of manufacturing lithographic device, lithographic cell, and computer program 有权
    制造光刻设备的方法，光刻单元和计算机程序

    公开(公告)号：JP2008182198A

    公开(公告)日：2008-08-07

    申请号：JP2007314126

    申请日：2007-12-05

    Applicant: Asml Netherlands Bv ,  エーエスエムエル ネザーランズ ビー.ブイ.

    Inventor： VAN INGEN SCHENAU KOEN ,  GEHOEL-VAN ANSEM WENDY FRANSIS ,  QUAEDACKERS JOHANNES A ,  WONG PATRICK

    IPC: H01L21/027 ,  G03F7/40

    CPC classification number: G03F7/0035 ,  G03F7/40 ,  G03F7/405 ,  G03F7/70466

    Abstract: PROBLEM TO BE SOLVED: To achieve a double patterning process for printing dense lines by which adverse effects after first pattering and before second patterning are mitigated.
    SOLUTION: In a first processing, a first semi-dense pattern of lines is printed in a first resist layer superimposed on a substrate with bottom anti-reflection coating applied. In a second processing, a second semi-dense pattern of lines is printed in a second resist layer provided over a cleared region. The first and the second semi-dense line patterns are positioned at an alternate position, and provide a desired dense pattern of lines and spaces. After development of a first resist, but before providing a second resist on the substrate, a surface conditioning of the bottom anti-reflection coating is applied to the cleared region between lines of a first resist material. A surface conditioning step improves adhesion of a feature of the second resist to a surface of the cleared region.
    COPYRIGHT: (C)2008,JPO&INPIT

    Abstract translation: 要解决的问题：实现用于打印密集线的双重图案化工艺，其中减轻了第一图案之后和第二图案化之前的不利影响。 解决方案：在第一处理中，第一半致密图案线被印刷在叠加在具有底部抗反射涂层的基板上的第一抗蚀剂层中。 在第二处理中，在设置在清除区域上的第二抗蚀剂层中印刷线的第二半致密图案。 第一和第二半致密线图案位于交替位置，并且提供所需的线条和空间的密集图案。 在第一抗蚀剂显影之后，但在基板上提供第二抗蚀剂之前，将底部防反射涂层的表面调节施加到第一抗蚀剂材料的线之间的清除区域。 表面调整步骤改善了第二抗蚀剂的特征对被清除区域的表面的附着。 版权所有（C）2008，JPO＆INPIT

    Lithography method and device manufactured thereby
    4.
    发明专利
    Lithography method and device manufactured thereby 有权
    算术方法及其制造方法

    公开(公告)号：JP2009033147A

    公开(公告)日：2009-02-12

    申请号：JP2008169180

    申请日：2008-06-27

    Applicant: Asml Netherlands Bv ,  エーエスエムエル ネザーランズ ビー.ブイ.

    Inventor： WONG PATRICK ,  GEHOEL-VAN ANSEM WENDY FRANSIS ,  MAAS RUDOLF ADRIANUS JOANNES ,  WANG SUPING

    IPC: H01L21/027

    CPC classification number: G03F7/168 ,  G03F7/091 ,  G03F7/11 ,  G03F7/2041

    Abstract: PROBLEM TO BE SOLVED: To provide a method for processing a substrate capable of removing or mitigating one or a plurality of problems, and a method for manufacturing a device.
    SOLUTION: The method for processing a substrate provided with an anti-reflective coating extending to or beyond a peripheral edge of the substrate, includes a step of removing a portion of the anti-reflective coating 2 adjacent to and around a periphery of the substrate W using a back-side removal process, a step of depositing a layer of radiation sensitive material onto the anti-reflective coating, a step of depositing a top-coat layer onto the layer of radiation sensitive material, and a step of simultaneously removing a portion of the layer of radiation sensitive material and a portion of the top-coat layer from around an area adjacent to the periphery of the substrate by using the top-side removing process.
    COPYRIGHT: (C)2009,JPO&INPIT

    Abstract translation: 解决的问题：提供一种处理能够去除或减轻一个或多个问题的基板的方法及其制造方法。 解决方案：用于处理设置有延伸到或超过衬底的周边边缘的抗反射涂层的衬底的方法包括以下步骤：除去邻近于和围绕衬底周围的防反射涂层2的一部分 使用背面去除工艺的衬底W，在抗反射涂层上沉积辐射敏感材料层的步骤，将顶涂层沉积在辐射敏感材料层上的步骤，以及同时 通过使用顶侧去除工艺，从邻近基板周围的区域周围除去辐射敏感材料层的一部分和顶涂层的一部分。 版权所有（C）2009，JPO＆INPIT

    Lithography device, method of manufacturing device, and substrate
    5.
    发明专利
    Lithography device, method of manufacturing device, and substrate 有权
    光刻设备，制造方法和基板

    公开(公告)号：JP2007258703A

    公开(公告)日：2007-10-04

    申请号：JP2007062735

    申请日：2007-03-13

    Applicant: Asml Netherlands Bv ,  エーエスエムエル ネザーランズ ビー.ブイ.

    Inventor： QUAEDACKERS JOHANNES A ,  VAN INGEN SCHENAU KOEN ,  WONG PATRICK ,  VAN ROOY MICHEL FRANCISCUS JOH

    IPC: H01L21/027

    CPC classification number: G03F7/70341 ,  G03F7/2043

    Abstract: PROBLEM TO BE SOLVED: To provide an immersion lithography device by which track processing is simplified, and the size uniformity of relatively thin line width is improved.
    SOLUTION: An immersion liquid contains one or several photosensitive materials. The one or several photosensitive materials are exposed to a radiation beam, thereby photochemically activated, and deposited on a surface of a substrate as a film. The film is deposited only in an area irradiated with light only when the photosensitive materials are activated. Therefore, a patterned radiation beam is irradiated, thereby a patterned film 17 is established on the surface of a substrate W according to the pattern.
    COPYRIGHT: (C)2008,JPO&INPIT

    Abstract translation: 要解决的问题：提供一种简化轨迹处理的浸没式光刻装置，并且提高相对细线宽度的尺寸均匀性。

    解决方案：浸没液体含有一种或多种感光材料。 一个或几个感光材料暴露于辐射束，从而光化学活化，并作为膜沉积在基底的表面上。 只有当感光材料被激活时，该膜仅沉积在用光照射的区域中。 因此，照射图案化的辐射束，由此根据图案在基板W的表面上形成图案化的膜17。 版权所有（C）2008，JPO＆INPIT

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