中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

10 records (took 0.025 seconds)

    Alignment system and method and device manufactured thereby
    2.
    发明专利
    Alignment system and method and device manufactured thereby 审中-公开
    对准系统及其制造方法及装置

    公开(公告)号：JP2009117870A

    公开(公告)日：2009-05-28

    申请号：JP2009039327

    申请日：2009-02-23

    Applicant: Asml Netherlands Bv ,  エーエスエムエル ネザーランズ ビー.ブイ.

    Inventor： TOLSMA HOITE PIETER THEODOOR ,  NAVARRO Y KOREN RAMON ,  SIMONS HUBERTUS JOHANNES GERTR ,  EDART REMI DANIEL MARIE ,  LAM PUI LENG ,  HULSHOF BERNARDUS JOHANNES ANT ,  BOGERS ROLAND ADRIANUS EMANUEL

    IPC: G03F7/20 ,  H01L21/027 ,  G03B27/42 ,  G03F9/00

    CPC classification number: G03B27/42 ,  G03F9/7046

    Abstract: PROBLEM TO BE SOLVED: To provide an arrangement configuration and a method for automatically selecting a substrate alignment mark on a substrate in lithography equipment and an overlay metering target in an overlay metering device. SOLUTION: A memory stores locations of one or a plurality of sets of substrate alignment marks or overlay metering targets available for selection and selection rules to select suitable substrate alignment marks or overlay metering targets from this at least one set. The selection rules are based on experimental or theoretical knowledge about which substrate alignment mark or overlay metering targets locations are optimal based on one or a plurality of selection criteria. COPYRIGHT: (C)2009,JPO&INPIT

    Abstract translation: 要解决的问题：提供一种在覆盖计量装置中在光刻设备和覆盖计量目标物中自动选择基板上的基板对准标记的布置配置和方法。 解决方案：存储器存储可用于选择和选择规则的一组或多组衬底对准标记或覆盖测量目标的位置，以从该至少一组中选择合适的衬底对准标记或覆盖测量目标。 选择规则基于关于基于一个或多个选择标准的哪些衬底对准标记或覆盖测量目标位置是最佳的实验或理论知识。 版权所有（C）2009，JPO＆INPIT

    Alignment system and method and device manufactured thereby
    4.
    发明专利
    Alignment system and method and device manufactured thereby 有权
    对准系统及其制造方法及装置

    公开(公告)号：JP2009117872A

    公开(公告)日：2009-05-28

    申请号：JP2009039399

    申请日：2009-02-23

    Applicant: Asml Netherlands Bv ,  エーエスエムエル ネザーランズ ビー.ブイ.

    Inventor： TOLSMA HOITE PIETER THEODOOR ,  NAVARRO Y KOREN RAMON ,  SIMONS HUBERTUS JOHANNES GERTR ,  EDART REMI DANIEL MARIE ,  LAM PUI LENG ,  HULSHOF BERNARDUS JOHANNES ANT ,  BOGERS ROLAND ADRIANUS EMANUEL

    IPC: G03F7/20 ,  H01L21/027 ,  G03B27/42

    CPC classification number: G03B27/42 ,  G03F9/7046

    Abstract: PROBLEM TO BE SOLVED: To provide an arrangement configuration and a method for automatically selecting a substrate alignment mark on a substrate in lithography equipment and an overlay metering target in an overlay metering device. SOLUTION: A memory stores locations of one or a plurality of sets of substrate alignment marks or overlay metering targets available for selection and selection rules to select suitable substrate alignment marks or overlay metering targets from this at least one set. The selection rules are based on at least one of experimental and theoretical knowledge about which substrate alignment mark or overlay metering targets locations are optimal based on one or a plurality of selection criteria. COPYRIGHT: (C)2009,JPO&INPIT

    Abstract translation: 要解决的问题：提供一种在覆盖计量装置中在光刻设备和覆盖计量目标物中自动选择基板上的基板对准标记的布置配置和方法。 解决方案：存储器存储可用于选择和选择规则的一组或多组衬底对准标记或覆盖测量目标的位置，以从该至少一组中选择合适的衬底对准标记或覆盖测量目标。 选择规则基于基于一个或多个选择标准的关于哪个衬底对准标记或覆盖计量目标位置是最佳的实验和理论知识中的至少一个。 版权所有（C）2009，JPO＆INPIT

    Method for applying pattern to substrate, device manufacturing method and lithography apparatus used therefor
    5.
    发明专利
    Method for applying pattern to substrate, device manufacturing method and lithography apparatus used therefor 有权
    将图案应用于基板的方法，设备制造方法及其使用的平面设备

    公开(公告)号：JP2013074294A

    公开(公告)日：2013-04-22

    申请号：JP2012207880

    申请日：2012-09-21

    Applicant: Asml Netherlands Bv ,  エーエスエムエル ネザーランズ ビー.ブイ.

    Inventor： STEFAN CORNELIS THEODORUS VAN DER SANDEN ,  FRANCISCUS VAN HAREN RICHARD JOHANNES ,  SIMONS HUBERTUS JOHANNES GERTRUDUS ,  EDART REMI DANIEL MARIE ,  XIUHONG WEI ,  MICHAEL KUBIS ,  ELENA RULINA

    IPC: H01L21/027

    CPC classification number: G03F7/70616 ,  G03F7/70141 ,  G03F7/70633 ,  G03F9/7003 ,  G03F9/7088

    Abstract: PROBLEM TO BE SOLVED: To further reduce measurement overhead in a lithography process and, at the same time, to keep a performance advantage of higher-order correction.SOLUTION: A substrate is loaded on a substrate support of a lithography apparatus and thereafter, the apparatus measures positions of substrate alignment marks. These measurement values define first correction information, and the apparatus can give patterns to one or more desired positions on the substrate. In order to improve pattern positioning accuracy, in particular, in order to correct higher-order distortion of a nomina alignment grid, additional second correction information is used. The second correction information may also be information based on the position measurement of the alignment mark which is performed in giving the preceding pattern to the same substrate. Alternatively or additionally, the second correction information may also be information based on the measurement which is performed on a similar substrate patterned before the present substrate.

    Abstract translation: 要解决的问题：为了进一步降低光刻工艺中的测量开销，同时保持高阶校正的性能优势。 解决方案：将基板装载在光刻设备的基板支撑件上，此后，该装置测量基板对准标记的位置。 这些测量值定义了第一校正信息，并且该装置可以给出衬底上的一个或多个所需位置的图案。 为了提高图案定位精度，特别是为了校正名义对齐网格的高阶失真，使用附加的第二校正信息。 第二校正信息还可以是基于在将同一衬底给出先前图案时执行的对准标记的位置测量的信息。 或者或另外，第二校正信息还可以是基于在当前基板之前图案化的类似衬底上执行的测量的信息。 版权所有（C）2013，JPO＆INPIT

    METHOD AND SYSTEM FOR AUTOMATED PROCESS CORRECTION USING MODEL PARAMETERS, AND LITHOGRAPHIC APPARATUS USING SUCH METHOD AND SYSTEM
    6.
    发明专利
    METHOD AND SYSTEM FOR AUTOMATED PROCESS CORRECTION USING MODEL PARAMETERS, AND LITHOGRAPHIC APPARATUS USING SUCH METHOD AND SYSTEM 审中-公开

    公开(公告)号：JP2006186372A

    公开(公告)日：2006-07-13

    申请号：JP2005373122

    申请日：2005-12-26

    Applicant: ASML NETHERLANDS BV

    Inventor： EDART REMI DANIEL MARIE

    IPC: H01L21/027 ,  G03F7/20 ,  H01L21/02

    Abstract: PROBLEM TO BE SOLVED: To provide a method for aligning a substrate in a lithographic apparatus. SOLUTION: The substrate includes a plurality of alignment marks. The alignment marks have been defined by a second lithographic apparatus LM2 and are arranged to provide a substrate grid as a coordinate system that includes a first and a second direction, substantially perpendicular to the first direction. The method includes steps of measuring a location and an orientation of the alignment marks to obtain alignment mark data, determining the substrate grid of the substrate from the alignment mark data by using a first substrate grid model with a first set of parameters, determining the substrate grid of the substrate from the alignment mark data by using a second substrate grid model with a second set of parameters including an ortho-scaling parameter in addition to the first set of parameters, and correcting machine-to-machine differences between the lithographic apparatus and the second lithographic apparatus LM2 with automated process control data based on the ortho-scaling parameter. COPYRIGHT: (C)2006,JPO&NCIPI

    Lithographic apparatus and method
    7.
    发明专利
    Lithographic apparatus and method 有权
    LITHOGRAPHIC设备和方法

    公开(公告)号：JP2009147317A

    公开(公告)日：2009-07-02

    申请号：JP2008294810

    申请日：2008-11-18

    Applicant: Asml Netherlands Bv ,  エーエスエムエル ネザーランズ ビー.ブイ.

    Inventor： EDART REMI DANIEL MARIE ,  BIJNEN FRANCISCUS GODEFRIDUS C ,  PELLENS RUDY JAN MARIA ,  MAURY PASCALE ANNE

    IPC: H01L21/027

    CPC classification number: G03F9/7049 ,  G03F7/70633 ,  G03F9/7065 ,  G03F9/7088

    Abstract: PROBLEM TO BE SOLVED: To accurately measure the position of an alignment mark located at a lower surface of a substrate. SOLUTION: A lithography alignment apparatus includes a radiation source constructed to generate radiation of 1,000 nm or a plurality of wavelengths longer than 1,000 nm; a control system 11 constructed to select one or plural infrared ray wavelengths; and a plurality of non focusing detector 15 constructed such that after the radiation is reflected by an alignment mark, a diffraction grating is provided, at least part of the diffraction grating has different diffraction grating periods to detect the radiation. COPYRIGHT: (C)2009,JPO&INPIT

    Abstract translation: 要解决的问题：精确测量位于基板下表面的对准标记的位置。 解决方案：光刻对准装置包括被构造成产生1000nm或多于1000nm长的波长的辐射的辐射源; 构造成选择一个或多个红外线波长的控制系统11; 以及多个非聚焦检测器15，其被构造成使得在辐射被对准标记反射之后，提供衍射光栅，至少部分衍射光栅具有不同的衍射光栅周期以检测辐射。 版权所有（C）2009，JPO＆INPIT

Patent Agency Ranking