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    A fluid handling device, an immersion lithographic apparatus and a device manufacturing method
    1.
    发明公开
    A fluid handling device, an immersion lithographic apparatus and a device manufacturing method 有权
    流体处理装置，静脉注射装置和装置制造方法

    公开(公告)号：KR20100113043A

    公开(公告)日：2010-10-20

    申请号：KR20100032831

    申请日：2010-04-09

    Applicant: ASML NETHERLANDS BV

    Inventor： EUMMELEN ERIK HENRICUS EGIDIUS CATHARINA ,  STEFFENS KOEN ,  KANEKO TAKESHI ,  CORCORAN GREGORY MARTIN MASON

    IPC: G03F7/20 ,  H01L21/027

    CPC classification number: G03F7/70341 ,  G03F7/2041 ,  G03F7/70916 ,  H01L21/0274

    Abstract: PURPOSE: An immersion lithography device and a manufacturing method thereof are provided to effectively and efficiently remove undesirable droplets from the surface of a substrate or a substrate table. CONSTITUTION: An immersion lithography device comprises the following: a projection system having an optical axis; a substrate table formed to maintain a substrate, defining the facing surface of the substrate and the substrate table itself; and a fluid handling structure for supplying an immersion liquid to an immersion space located on the surface facing the projection system. The fluid handling structure includes a fluid removal device(400), and a droplet removal device to remove droplets(200) form the immersion liquid.

    Abstract translation: 目的：提供一种浸没式光刻设备及其制造方法，以有效且有效地从基板或基板台的表面除去不需要的液滴。 构成：浸没光刻设备包括以下：具有光轴的投影系统; 形成为保持衬底的衬底台，限定衬底的面对表面和衬底台本身; 以及用于将浸没液体供应到位于面向投影系统的表面上的浸没空间的流体处理结构。 流体处理结构包括流体去除装置（400）和用于去除液滴（200）形成浸液的液滴去除装置。

    Lithographic apparatus and surface cleaning method
    3.
    发明专利
    Lithographic apparatus and surface cleaning method 有权
    平面设备和表面清洁方法

    公开(公告)号：JP2011124569A

    公开(公告)日：2011-06-23

    申请号：JP2010263517

    申请日：2010-11-26

    Applicant: Asml Netherlands Bv ,  エーエスエムエル ネザーランズ ビー.ブイ.

    Inventor： KANEKO TAKESHI ,  HOEKERD KORNELIS TIJMEN

    IPC: H01L21/027

    CPC classification number: G03F7/70341 ,  G03F7/70925 ,  G03F7/7095 ,  G03F7/70975

    Abstract: PROBLEM TO BE SOLVED: To provide a method and apparatus for cleaning a contaminated surface of the lithographic apparatus. SOLUTION: The liquid confinement structure is equipped with at least of two openings 10 used for supplying a liquid to a gap below the structure and extracting it. Flow direction between openings can be switched. A supplying line for supplying the liquid to a gap outside the radial direction of openings adapted to two-layer flow and supplying the liquid to the liquid confinement structure, and an extracting line for extracting the liquid from the liquid confinement structure, have an inner surface having corrosion resistance against organic liquid. A corrosive cleaning liquid can be used for cleaning a photoresist contamination. COPYRIGHT: (C)2011,JPO&INPIT

    Abstract translation: 要解决的问题：提供一种用于清洁光刻设备的污染表面的方法和设备。 解决方案：液体限制结构至少配备有用于将液体供给到结构下方的间隙的两个开口10并将其提取。 开关之间的流动方向可以切换。 一种用于将液体供应到适于两层流动的开口的径向外的间隙并将液体供应到液体限制结构的供应管线和用于从液体限制结构中提取液体的提取管线具有内表面 对有机液体具有耐腐蚀性。 腐蚀性清洁液可用于清洁光致抗蚀剂污染物。 版权所有（C）2011，JPO＆INPIT

    Shutter member, lithographic apparatus and device manufacturing method
    4.
    发明专利
    Shutter member, lithographic apparatus and device manufacturing method 有权
    SHUTTER会员，LITHOGRAPHIC设备和设备制造方法

    公开(公告)号：JP2011061199A

    公开(公告)日：2011-03-24

    申请号：JP2010199597

    申请日：2010-09-07

    Applicant: Asml Netherlands Bv ,  エーエスエムエル ネザーランズ ビー.ブイ.

    Inventor： KANEKO TAKESHI ,  EUMMELEN ERIK HENRICUS EGIDIUS CATHARINA ,  DZIOMKINA NINA VLADIMIROVNA ,  KRUIZINGA MATTHIAS

    IPC: H01L21/027

    CPC classification number: G03F7/70341 ,  G03F7/70733

    Abstract: PROBLEM TO BE SOLVED: To reduce the risk of an interference with a positioning system of an immersion liquid. SOLUTION: An immersion lithographic apparatus contains a substrate table, a fluid handling structure and a swap table. The substrate table is configured to support a substrate. The fluid handling structure is configured to supply and confine the immersion liquid to a space demarcated between a projection system and the substrate table, between the projection system and the substrate, or the both. The swap table includes, for example, a shutter surface configured to be under the fluid handling structure during swapping of the substrate on the substrate table. When used, a transfer surface between the surface of the substrate table and the surface of the swap table is moved under the fluid handling structure to contribute to inhibit leakage of the immersion liquid. A shutter member and the method are also disclosed. COPYRIGHT: (C)2011,JPO&INPIT

    Abstract translation: 要解决的问题：减少与浸没液体的定位系统的干扰的风险。 解决方案：浸没式光刻设备包含基板台，流体处理结构和互换台。 衬底台被配置为支撑衬底。 流体处理结构构造成将浸没液体供应并限制在投影系统和基板台之间，投影系统和基板之间或两者之间划分的空间。 交换台包括例如在基板在基板台上交换期间构造成处于流体处理结构下方的快门表面。 当使用时，衬底台的表面和互换台的表面之间的转印面在流体处理结构下移动以有助于抑制浸没液体的泄漏。 还公开了一种快门构件和方法。 版权所有（C）2011，JPO＆INPIT

    Position calibration of alignment head in multi-head alignment system
    5.
    发明专利
    Position calibration of alignment head in multi-head alignment system 有权
    多头对齐系统中对准头的位置校准

    公开(公告)号：JP2011023725A

    公开(公告)日：2011-02-03

    申请号：JP2010160451

    申请日：2010-07-15

    Applicant: Asml Netherlands Bv ,  エーエスエムエル ネザーランズ ビー.ブイ.

    Inventor： KANEKO TAKESHI ,  COMPEN RENE THEODORUS PETRUS

    IPC: H01L21/027 ,  G01B11/00

    CPC classification number: G03F9/7011 ,  G03F9/7019 ,  G03F9/7088

    Abstract: PROBLEM TO BE SOLVED: To improve calibration of multiple alignment heads and to improve overlay accuracy and product yield. SOLUTION: A calibration method for calibrating the positions of secondary alignment heads by using a primary alignment head in a multi-head alignment system is disclosed. The system is used for marker measurement on the surface of a wafer e.g. and is performed during a lithographic processing for forming a circuit in the wafer or on the wafer. A plurality of offset measurements are performed for at least one secondary alignment head, so that the offset of the secondary alignment heads with respect to the primary alignment head can be measured, and used as correction data in subsequent wafer measurement calculations. COPYRIGHT: (C)2011,JPO&INPIT

    Abstract translation: 要解决的问题：改善多个对准头的校准，并提高重叠精度和产品产量。 公开了一种用于通过使用多头对准系统中的主对准头校准二次对准头的位置的校准方法。 该系统用于在晶片表面上进行标记测量，例如 并且在用于在晶片或晶片上形成电路的光刻处理期间执行。 对于至少一个次对准头执行多个偏移测量，使得可以测量次对准头相对于主对准头的偏移，并用作随后的晶片测量计算中的校正数据。 版权所有（C）2011，JPO＆INPIT

    Substrate table, lithographic apparatus, and method for manufacturing device using lithographic apparatus
    6.
    发明专利
    Substrate table, lithographic apparatus, and method for manufacturing device using lithographic apparatus 有权
    基板表，平面设备和使用平面设备制造设备的方法

    公开(公告)号：JP2011171733A

    公开(公告)日：2011-09-01

    申请号：JP2011028425

    申请日：2011-02-14

    Applicant: Asml Netherlands Bv ,  エーエスエムエル ネザーランズ ビー.ブイ.

    Inventor： KANEKO TAKESHI ,  OTTENS JOOST JEROEN ,  LAFARRE RAYMOND WILHELMUS LOUIS

    IPC: H01L21/027 ,  G03F7/20

    CPC classification number: G03F7/70716 ,  G03F7/70341 ,  G03F7/70775

    Abstract: PROBLEM TO BE SOLVED: To provide an apparatus in which the possibility of errors in sensor reading is at least reduced. SOLUTION: A table for a lithographic apparatus comprises an encoder plate located on the table, a gap between the encoder plate and a top surface of the table, the gap located radially inward of the encoder plate relative to the periphery of the table, and a fluid extraction system with one or more openings in the surface of the gap to extract liquid from the gap. COPYRIGHT: (C)2011,JPO&INPIT

    Abstract translation: 要解决的问题：提供一种至少减少了传感器读数误差的可能性的装置。 解决方案：用于光刻设备的工作台包括位于工作台上的编码器板，编码器板与工作台的顶表面之间的间隙，位于编码器板相对于工作台周边的径向内侧的间隙 以及在间隙的表面中具有一个或多个开口以从间隙提取液体的流体抽出系统。 版权所有（C）2011，JPO＆INPIT

    Fluid handling device, immersion lithography apparatus and device manufacturing method
    7.
    发明专利
    Fluid handling device, immersion lithography apparatus and device manufacturing method 有权
    流体处理装置，注入式光刻装置和装置制造方法

    公开(公告)号：JP2010251744A

    公开(公告)日：2010-11-04

    申请号：JP2010085599

    申请日：2010-04-02

    Applicant: Asml Netherlands Bv ,  エーエスエムエル ネザーランズ ビー.ブイ.

    Inventor： EUMMELEN ERIK HENRICUS EGIDIUS CATHARINA ,  STEFFENS KOEN ,  KANEKO TAKESHI ,  CORCORAN GREGORY MARTIN MASON

    IPC: H01L21/027 ,  G03F7/20

    CPC classification number: G03F7/70341

    Abstract: PROBLEM TO BE SOLVED: To provide a device capable of removing undesired droplets from a surface of a substrate and/or a substrate table more effectively and efficiently. SOLUTION: A fluid handling system for an immersion lithography apparatus has a fluid removal device to remove immersion liquid from an immersion space, and a droplet removal device to remove a droplet of immersion liquid, wherein: the droplet removal device is located further from an optical axis than the fluid removal device, and the droplet removal device includes a porous member which faces, e.g., the substrate being exposed and/or the substrate table. COPYRIGHT: (C)2011,JPO&INPIT

    Abstract translation: 要解决的问题：提供能够更有效和高效地从基板和/或基板台的表面去除不需要的液滴的装置。 解决方案：用于浸没式光刻设备的流体处理系统具有用于从浸没空间中去除浸没液体的流体去除装置和用于去除浸液的液滴的液滴去除装置，其中：液滴去除装置位于更远处 从液体去除装置的光轴，并且液滴去除装置包括面向例如正在暴露的基板和/或基板台的多孔构件。 版权所有（C）2011，JPO＆INPIT

    POSITION CALIBRATION OF ALIGNMENT HEADS IN A MULTI-HEAD ALIGNMENT SYSTEM
    10.
    发明专利
    POSITION CALIBRATION OF ALIGNMENT HEADS IN A MULTI-HEAD ALIGNMENT SYSTEM 未知

    公开(公告)号：SG168488A1

    公开(公告)日：2011-02-28

    申请号：SG2010051423

    申请日：2010-07-15

    Applicant: ASML NETHERLANDS BV

    Inventor： KANEKO TAKESHI ,  COMPEN RENE THEODORUS PETRUS

    Abstract: A calibration method is disclosed, for the position calibration of secondary alignment heads with a primary alignment head in a multi- head alignment system, such as that used for the measurement of markers on the surface of a wafer, as carried out during a lithographic process in the formation of circuits in or on the wafer. A plurality of offset measurements are made for at least one of the secondary alignment heads, so that the offset of the secondary alignment heads with respect to the primary alignment head can be measured, and used as correction data in subsequent wafer measurement calculations. Fig. 18

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